Roll-to-roll printed resistive WORM memory on a flexible substrate

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)

Abstract

The fabrication process and the operation characteristics of a fully roll-to-roll printed resistive write-once-read-many memory on a flexible substrate are presented. The low-voltage (<10 V) write operation of the memories from a high resistivity '0' state to a low resistivity '1' state is based on the rapid electrical sintering of bits containing silver nanoparticles. The bit ink is formulated by mixing two commercially available silver nanoparticle inks in order to tune the initial square resistance of the bits and to create a self-organized network of percolating paths. The electrical performance of the memories, including read and write characteristics, is described and the long-term stability of the less stable '0' state is studied in different environmental conditions. The memories can find use in low-cost mass printing applications.
Original languageEnglish
JournalNanotechnology
Volume23
Issue number30
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

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Data storage equipment
Substrates
Silver
Ink
Nanoparticles
Printing
Sintering
Fabrication
Electric potential
Costs

Cite this

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title = "Roll-to-roll printed resistive WORM memory on a flexible substrate",
abstract = "The fabrication process and the operation characteristics of a fully roll-to-roll printed resistive write-once-read-many memory on a flexible substrate are presented. The low-voltage (<10 V) write operation of the memories from a high resistivity '0' state to a low resistivity '1' state is based on the rapid electrical sintering of bits containing silver nanoparticles. The bit ink is formulated by mixing two commercially available silver nanoparticle inks in order to tune the initial square resistance of the bits and to create a self-organized network of percolating paths. The electrical performance of the memories, including read and write characteristics, is described and the long-term stability of the less stable '0' state is studied in different environmental conditions. The memories can find use in low-cost mass printing applications.",
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Roll-to-roll printed resistive WORM memory on a flexible substrate. / Leppäniemi, J.; Mattila, T.; Kololuoma, T.; Suhonen, M.; Alastalo, A.

In: Nanotechnology, Vol. 23, No. 30, 2012.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Roll-to-roll printed resistive WORM memory on a flexible substrate

AU - Leppäniemi, J.

AU - Mattila, T.

AU - Kololuoma, T.

AU - Suhonen, M.

AU - Alastalo, A.

N1 - Project code: 20852

PY - 2012

Y1 - 2012

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AB - The fabrication process and the operation characteristics of a fully roll-to-roll printed resistive write-once-read-many memory on a flexible substrate are presented. The low-voltage (<10 V) write operation of the memories from a high resistivity '0' state to a low resistivity '1' state is based on the rapid electrical sintering of bits containing silver nanoparticles. The bit ink is formulated by mixing two commercially available silver nanoparticle inks in order to tune the initial square resistance of the bits and to create a self-organized network of percolating paths. The electrical performance of the memories, including read and write characteristics, is described and the long-term stability of the less stable '0' state is studied in different environmental conditions. The memories can find use in low-cost mass printing applications.

U2 - 10.1088/0957-4484/23/30/305204

DO - 10.1088/0957-4484/23/30/305204

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JO - Nanotechnology

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SN - 0957-4484

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