Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon

Horácio Coelho-Júnior*, Bruno G. Silva, Cilene Labre, Renan P. Loreto, Rubem L. Sommer

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.

Original languageEnglish
Article number3248
Pages (from-to)3248
JournalScientific Reports
Volume11
Issue number1
DOIs
Publication statusPublished - 5 Feb 2021
MoE publication typeA1 Journal article-refereed

Funding

H. C.-Júnior and R. L. Sommer acknowledge financial support from Brazilian agencies: Fundação de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ), Conselho Nacional de Desenvolvimento Científico e Tec-nológico (CNPq) and Financiadora de Estudos e Projetos (FINEP). The authors would like to thank Laboratório Multiusuário de Nanociência e Nanotecnologia (LABNANO) and Laboratório de Superfícies e Nanoestruturas from CBPF. The authors also are grateful by RBS experiment performed using the facilities of the Ion Implantation Laboratory at UFRGS. In addition, H. C.-Júnior would like to express their sincere thanks to Professors H. I. Boudinov of the Institute of Physics at UFRGS and A. L. Rossi of the CBPF for their helpful discussions.

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