Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon

Horácio Coelho-Júnior, Bruno G. Silva, Cilene Labre, Renan P. Loreto, Rubem L. Sommer

Research output: Contribution to journalArticleScientificpeer-review

Abstract

This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.

Original languageEnglish
Article number3248
Pages (from-to)3248
JournalScientific Reports
Volume11
Issue number1
DOIs
Publication statusPublished - 5 Feb 2021
MoE publication typeA1 Journal article-refereed

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