Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon

Horácio Coelho-Júnior; Bruno G. Silva; Cilene Labre; Renan P. Loreto; Rubem L. Sommer

doi:10.1038/s41598-021-82845-6

Room-temperature synthesis of earth-abundant semiconductor ZnSiN₂ on amorphous carbon

Horácio Coelho-Júnior^*
, Bruno G. Silva
, Cilene Labre
, Renan P. Loreto
, Rubem L. Sommer

^*Corresponding author for this work

Not published at VTT

Brazilian Center for Research in Physics (CBPF)

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN₂ on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN₂ nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.

Original language	English
Article number	3248
Pages (from-to)	3248
Journal	Scientific Reports
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/s41598-021-82845-6
Publication status	Published - 5 Feb 2021
MoE publication type	A1 Journal article-refereed

Funding

H. C.-Júnior and R. L. Sommer acknowledge financial support from Brazilian agencies: Fundação de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ), Conselho Nacional de Desenvolvimento Científico e Tec-nológico (CNPq) and Financiadora de Estudos e Projetos (FINEP). The authors would like to thank Laboratório Multiusuário de Nanociência e Nanotecnologia (LABNANO) and Laboratório de Superfícies e Nanoestruturas from CBPF. The authors also are grateful by RBS experiment performed using the facilities of the Ion Implantation Laboratory at UFRGS. In addition, H. C.-Júnior would like to express their sincere thanks to Professors H. I. Boudinov of the Institute of Physics at UFRGS and A. L. Rossi of the CBPF for their helpful discussions.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1038/s41598-021-82845-6

Cite this

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title = "Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon",

abstract = "This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.",

author = "Hor{\'a}cio Coelho-J{\'u}nior and Silva, \{Bruno G.\} and Cilene Labre and Loreto, \{Renan P.\} and Sommer, \{Rubem L.\}",

note = "Funding Information: H. C.-J{\'u}nior and R. L. Sommer acknowledge financial support from Brazilian agencies: Funda{\c c}{\~a}o de Amparo {\`a} Pesquisa do Estado do Rio de Janeiro (FAPERJ), Conselho Nacional de Desenvolvimento Cient{\'i}fico e Tec-nol{\'o}gico (CNPq) and Financiadora de Estudos e Projetos (FINEP). The authors would like to thank Laborat{\'o}rio Multiusu{\'a}rio de Nanoci{\^e}ncia e Nanotecnologia (LABNANO) and Laborat{\'o}rio de Superf{\'i}cies e Nanoestruturas from CBPF. The authors also are grateful by RBS experiment performed using the facilities of the Ion Implantation Laboratory at UFRGS. In addition, H. C.-J{\'u}nior would like to express their sincere thanks to Professors H. I. Boudinov of the Institute of Physics at UFRGS and A. L. Rossi of the CBPF for their helpful discussions. Publisher Copyright: {\textcopyright} 2021, The Author(s).",

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AU - Coelho-Júnior, Horácio

AU - Silva, Bruno G.

AU - Labre, Cilene

AU - Loreto, Renan P.

AU - Sommer, Rubem L.

N1 - Funding Information: H. C.-Júnior and R. L. Sommer acknowledge financial support from Brazilian agencies: Fundação de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ), Conselho Nacional de Desenvolvimento Científico e Tec-nológico (CNPq) and Financiadora de Estudos e Projetos (FINEP). The authors would like to thank Laboratório Multiusuário de Nanociência e Nanotecnologia (LABNANO) and Laboratório de Superfícies e Nanoestruturas from CBPF. The authors also are grateful by RBS experiment performed using the facilities of the Ion Implantation Laboratory at UFRGS. In addition, H. C.-Júnior would like to express their sincere thanks to Professors H. I. Boudinov of the Institute of Physics at UFRGS and A. L. Rossi of the CBPF for their helpful discussions. Publisher Copyright: © 2021, The Author(s).

PY - 2021/2/5

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N2 - This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.

AB - This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.

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