S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

Yu Wang; Srivathsa Bhat; Timo Aalto; Nicola Calabretta

doi:10.1109/OECC56963.2023.10209836

S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

Yu Wang^*, Srivathsa Bhat, Timo Aalto, Nicola Calabretta

^*Corresponding author for this work

BA6203 Silicon photonics

Eindhoven University of Technology (TU/e)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, <0.7dB polarization dependent loss and 6-ns switching time.

Original language	English
Title of host publication	2023 Opto-Electronics and Communications Conference, OECC 2023
Publisher	IEEE Institute of Electrical and Electronic Engineers
Number of pages	4
ISBN (Electronic)	978-1-66546-213-6
DOIs	https://doi.org/10.1109/OECC56963.2023.10209836
Publication status	Published - 2023
MoE publication type	A4 Article in a conference publication
Event	2023 Opto-Electronics and Communications Conference, OECC 2023 - Shanghai, China Duration: 2 Jul 2023 → 6 Jul 2023

Conference

Conference	2023 Opto-Electronics and Communications Conference, OECC 2023
Country/Territory	China
City	Shanghai
Period	2/07/23 → 6/07/23

Keywords

integrated optics
optical switch
silicon photonics

Access to Document

10.1109/OECC56963.2023.10209836

Cite this

@inproceedings{193c74128b444a39a8ed9abdfbd1fcea,

title = "S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity",

abstract = "We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, <0.7dB polarization dependent loss and 6-ns switching time.",

keywords = "integrated optics, optical switch, silicon photonics",

author = "Yu Wang and Srivathsa Bhat and Timo Aalto and Nicola Calabretta",

note = "Funding Information: ACKNOWLEDGMENT This work has been partially supported by the EU Horizon 2020 research and innovation programme under the Marie Sk{\l}odowska-Curie grant agreement 814276 and the EU B5G-OPEN grant agreement 101016663. And the work is part of the Academy of Finland Flagship Programme, Photonics Research and Innovation (PREIN), decisions 320168 and 346545. Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 Opto-Electronics and Communications Conference, OECC 2023 ; Conference date: 02-07-2023 Through 06-07-2023",

year = "2023",

doi = "10.1109/OECC56963.2023.10209836",

language = "English",

booktitle = "2023 Opto-Electronics and Communications Conference, OECC 2023",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Wang, Y, Bhat, S , Aalto, T & Calabretta, N 2023, S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity. in 2023 Opto-Electronics and Communications Conference, OECC 2023. IEEE Institute of Electrical and Electronic Engineers, 2023 Opto-Electronics and Communications Conference, OECC 2023, Shanghai, China, 2/07/23. https://doi.org/10.1109/OECC56963.2023.10209836

S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity. / Wang, Yu; Bhat, Srivathsa ; Aalto, Timo et al.
2023 Opto-Electronics and Communications Conference, OECC 2023. IEEE Institute of Electrical and Electronic Engineers, 2023.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

AU - Wang, Yu

AU - Bhat, Srivathsa

AU - Aalto, Timo

AU - Calabretta, Nicola

N1 - Funding Information: ACKNOWLEDGMENT This work has been partially supported by the EU Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement 814276 and the EU B5G-OPEN grant agreement 101016663. And the work is part of the Academy of Finland Flagship Programme, Photonics Research and Innovation (PREIN), decisions 320168 and 346545. Publisher Copyright: © 2023 IEEE.

PY - 2023

Y1 - 2023

N2 - We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, <0.7dB polarization dependent loss and 6-ns switching time.

AB - We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, <0.7dB polarization dependent loss and 6-ns switching time.

KW - integrated optics

KW - optical switch

KW - silicon photonics

UR - http://www.scopus.com/inward/record.url?scp=85170259467&partnerID=8YFLogxK

U2 - 10.1109/OECC56963.2023.10209836

DO - 10.1109/OECC56963.2023.10209836

M3 - Conference article in proceedings

AN - SCOPUS:85170259467

BT - 2023 Opto-Electronics and Communications Conference, OECC 2023

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 2023 Opto-Electronics and Communications Conference, OECC 2023

Y2 - 2 July 2023 through 6 July 2023

ER -

S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

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S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

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