Abstract
Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.
| Original language | English |
|---|---|
| Article number | 100102 |
| Number of pages | 5 |
| Journal | Applied Surface Science Advances |
| Volume | 5 |
| DOIs | |
| Publication status | Published - 1 Sept 2021 |
| MoE publication type | A1 Journal article-refereed |
Funding
This work utilized Aalto University RawMatters Research Infrastructure (RAMI) facilities for ED-EPMA and Micronova/Otanano for ALD. The work at Aalto University was supported by Puurunen's starting grant and by the Academy of Finland (COOLCAT consortium, decision no. 329978 and ALDI consortium, decision no. 331082).
Keywords
- Atomic layer deposition
- Characterization techniques development
- Lateral high aspect ratio structure
- Monte Carlo methods
- Saturation profile
- X-ray microanalysis