Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

Eero Haimi; Oili M.E. Ylivaara; Jihong Yim; Riikka L. Puurunen

doi:10.1016/j.apsadv.2021.100102

Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

Eero Haimi^* (Corresponding Author), Oili M.E. Ylivaara, Jihong Yim, Riikka L. Puurunen

^*Corresponding author for this work

BA6201 MEMS

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.

Original language	English
Article number	100102
Number of pages	5
Journal	Applied Surface Science Advances
Volume	5
DOIs	https://doi.org/10.1016/j.apsadv.2021.100102
Publication status	Published - 1 Sept 2021
MoE publication type	A1 Journal article-refereed

Keywords

Atomic layer deposition
Characterization techniques development
Lateral high aspect ratio structure
Monte Carlo methods
Saturation profile
X-ray microanalysis

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10.1016/j.apsadv.2021.100102Licence: CC BY

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@article{60d93a0506a54a64a43a090f213a810e,

title = "Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure",

abstract = "Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.",

keywords = "Atomic layer deposition, Characterization techniques development, Lateral high aspect ratio structure, Monte Carlo methods, Saturation profile, X-ray microanalysis",

author = "Eero Haimi and Ylivaara, {Oili M.E.} and Jihong Yim and Puurunen, {Riikka L.}",

note = "Funding Information: This work utilized Aalto University RawMatters Research Infrastructure (RAMI) facilities for ED-EPMA and Micronova/Otanano for ALD. The work at Aalto University was supported by Puurunen's starting grant and by the Academy of Finland (COOLCAT consortium, decision no. 329978 and ALDI consortium, decision no. 331082).",

year = "2021",

month = sep,

day = "1",

doi = "10.1016/j.apsadv.2021.100102",

language = "English",

volume = "5",

journal = "Applied Surface Science Advances",

issn = "2666-5239",

publisher = "Elsevier",

}

TY - JOUR

T1 - Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

AU - Haimi, Eero

AU - Ylivaara, Oili M.E.

AU - Yim, Jihong

AU - Puurunen, Riikka L.

N1 - Funding Information: This work utilized Aalto University RawMatters Research Infrastructure (RAMI) facilities for ED-EPMA and Micronova/Otanano for ALD. The work at Aalto University was supported by Puurunen's starting grant and by the Academy of Finland (COOLCAT consortium, decision no. 329978 and ALDI consortium, decision no. 331082).

PY - 2021/9/1

Y1 - 2021/9/1

N2 - Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.

AB - Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.

KW - Atomic layer deposition

KW - Characterization techniques development

KW - Lateral high aspect ratio structure

KW - Monte Carlo methods

KW - Saturation profile

KW - X-ray microanalysis

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U2 - 10.1016/j.apsadv.2021.100102

DO - 10.1016/j.apsadv.2021.100102

M3 - Article

AN - SCOPUS:85116028509

SN - 2666-5239

VL - 5

JO - Applied Surface Science Advances

JF - Applied Surface Science Advances

M1 - 100102

ER -

Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

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Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

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