Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

Eero Haimi (Corresponding Author), Oili M.E. Ylivaara, Jihong Yim, Riikka L. Puurunen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.

Original languageEnglish
Article number100102
Number of pages5
JournalApplied Surface Science Advances
Volume5
DOIs
Publication statusPublished - 1 Sep 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • Atomic layer deposition
  • Characterization techniques development
  • Lateral high aspect ratio structure
  • Monte Carlo methods
  • Saturation profile
  • X-ray microanalysis

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