SC-1 etching of niobium and titanium nitride thin films

Adrián Gutiérrez-Cruz; Achini Rathnathilaka; Jani M. Taskinen; Tuomas Vaimala; Kestutis Grigoras; Harshad Mishra; Rishabh Upadhyay; Jorden Senior; Alberto Ronzani

doi:10.35848/1347-4065/ae8ee6

SC-1 etching of niobium and titanium nitride thin films

^*Corresponding author for this work

VTT Technical Research Centre of Finland

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Abstract

Dry etching techniques, ubiquitous in microelectronics fabrication, often result in challenging levels of undesired collateral plasma-induced damage. In this work, we demonstrate a wet etching alternative for the patterning of niobium (Nb) and titanium nitride (TiN) thin films using the Standard Cleaning 1 (SC-1) solution. We characterize the etching process through its time-evolution dynamics, supported by scanning-electron and atomic force microscopy assessment of the etched film morphology. The results suggest etch dynamics that are linked to native oxides and film microstructure. Overall, the manageable etch rates, the safe operation and the high material selectivity are attractive for practical use in microelectronics fabrication.

Original language	English
Article number	168001
Journal	Japanese Journal of Applied Physics
Volume	65
Issue number	16
DOIs	https://doi.org/10.35848/1347-4065/ae8ee6
Publication status	Published - 31 Aug 2026
MoE publication type	A1 Journal article-refereed

Funding

This work was supported by the European Union’s HORIZON-RIA programme (Grant 101135240-JOGATE, managed by Chips JU) and by Research Council of Finland through project No. 356 542-SUPSI.

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10.35848/1347-4065/ae8ee6Licence: CC BY

ae8ee6Final published version, 1.5 MBLicence: CC BY

JOGATE: Josephson Gated Transistors and Electronics
Ronzani, A. (PI), Senior, J. (Participant), Rathnathilaka, A. (Participant) & Vaimala, T. (Participant)
1/12/23 → 30/11/27
Project: EU project
SUPSI: Si-based Josephson field-effect transistors
Ronzani, A. (PI)
1/09/23 → 31/08/27
Project: Research Council of Finland

Cite this

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title = "SC-1 etching of niobium and titanium nitride thin films",

abstract = "Dry etching techniques, ubiquitous in microelectronics fabrication, often result in challenging levels of undesired collateral plasma-induced damage. In this work, we demonstrate a wet etching alternative for the patterning of niobium (Nb) and titanium nitride (TiN) thin films using the Standard Cleaning 1 (SC-1) solution. We characterize the etching process through its time-evolution dynamics, supported by scanning-electron and atomic force microscopy assessment of the etched film morphology. The results suggest etch dynamics that are linked to native oxides and film microstructure. Overall, the manageable etch rates, the safe operation and the high material selectivity are attractive for practical use in microelectronics fabrication.",

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T1 - SC-1 etching of niobium and titanium nitride thin films

AU - Gutiérrez-Cruz, Adrián

AU - Rathnathilaka, Achini

AU - Taskinen, Jani M.

AU - Vaimala, Tuomas

AU - Grigoras, Kestutis

AU - Mishra, Harshad

AU - Upadhyay, Rishabh

AU - Senior, Jorden

AU - Ronzani, Alberto

PY - 2026/8/31

Y1 - 2026/8/31

N2 - Dry etching techniques, ubiquitous in microelectronics fabrication, often result in challenging levels of undesired collateral plasma-induced damage. In this work, we demonstrate a wet etching alternative for the patterning of niobium (Nb) and titanium nitride (TiN) thin films using the Standard Cleaning 1 (SC-1) solution. We characterize the etching process through its time-evolution dynamics, supported by scanning-electron and atomic force microscopy assessment of the etched film morphology. The results suggest etch dynamics that are linked to native oxides and film microstructure. Overall, the manageable etch rates, the safe operation and the high material selectivity are attractive for practical use in microelectronics fabrication.

AB - Dry etching techniques, ubiquitous in microelectronics fabrication, often result in challenging levels of undesired collateral plasma-induced damage. In this work, we demonstrate a wet etching alternative for the patterning of niobium (Nb) and titanium nitride (TiN) thin films using the Standard Cleaning 1 (SC-1) solution. We characterize the etching process through its time-evolution dynamics, supported by scanning-electron and atomic force microscopy assessment of the etched film morphology. The results suggest etch dynamics that are linked to native oxides and film microstructure. Overall, the manageable etch rates, the safe operation and the high material selectivity are attractive for practical use in microelectronics fabrication.

U2 - 10.35848/1347-4065/ae8ee6

DO - 10.35848/1347-4065/ae8ee6

M3 - Article

SN - 0021-4922

VL - 65

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 16

M1 - 168001

ER -

SC-1 etching of niobium and titanium nitride thin films

Abstract

Funding

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Projects

JOGATE: Josephson Gated Transistors and Electronics

SUPSI: Si-based Josephson field-effect transistors

Cite this