Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor

Pedro C. Feijoo, Francisco Pasadas, José M. Iglesias, Maria J. Martin, Raul Rengel, Changfeng Li, Wonjae Kim, Juha Riikonen, Harri Lipsanen, David Jiménez

    Research output: Contribution to journalArticleScientificpeer-review

    14 Citations (Scopus)


    The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field-effect transistors (GFETs) to get a competitive radio-frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc). This information is fed into a self-consistent simulator, which solves the drift-diffusion equation coupled with the two-dimensional Poisson's equation to take full account of short channel effects. Simulated GFET characteristics were benchmarked against experimental data from our fabricated devices. Our simulations show that scalability is supposed to bring to RF performance an improvement that is, however, highly limited by instability. Despite the possibility of a lower performance, a careful choice of the bias point can avoid instability. Nevertheless, maximum oscillation frequencies are still achievable in the THz region for channel lengths of a few hundreds of nanometers.
    Original languageEnglish
    Article number485203
    Issue number48
    Publication statusPublished - 6 Nov 2017
    MoE publication typeA1 Journal article-refereed


    We acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre for GFET fabrication. This work is funded by the European Union’s Horizon 2020 research and innovation program (grant agreement No 696656), the Ministerio de Economía y Competitividad (projects TEC2013-42622-R, TEC2015-67462-C2-1-R, TEC2016-80839-P, MINECO/ FEDER and grant FJCI-2014-19643), the Ministerio de Educación (CAS16/00043) and the Generalitat de Catalunya (project 2014 SGR 384).


    • boron nitride
    • carrier mobility
    • field-effect transistor
    • Graphene
    • radio-frequency
    • scattering mechanisms
    • short channel


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