Scatterometry analysis of sequentially imprinted patterns: Influence of thermal parameters

C. Gourgon (Corresponding Author), A.K. Ferchichi, D. Pietroy, Tomi Haatainen, J. Tesseire

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    Scatterometry technique has been used to characterize Thermal Step and Repeat NIL processes in the framework of NAPANIL project. Two hundred and fifty nanometers dense lines were imprinted in mr-7030 polymer and their profiles have been analyzed and compared to the mold one. It has been demonstrated that scatterometry on silicon exhibits a very high accuracy and that a change of the sidewall verticality of only few degrees can been measured. The results show that some reflow occurs in lines during the imprint of neighboring dies due to heat diffusion. This phenomenon has been studied as a function of printing temperature, demolding temperature, and space between adjacent dies. The conclusion is that a trade off has to be made between imprint temperature and chuck temperature to be able to fill mold cavities with a limitation of the reflow.
    Original languageEnglish
    Pages (from-to)270-274
    Number of pages4
    JournalMicroelectronic Engineering
    Volume98
    DOIs
    Publication statusPublished - 2012
    MoE publication typeA1 Journal article-refereed
    Event37th International Conference on Micro- and Nano-Engineering, MNE 2011 - Berlin, Germany
    Duration: 19 Sep 201123 Sep 2011
    Conference number: 37

    Fingerprint

    Chucks
    Temperature
    temperature
    Silicon
    printing
    Printing
    Polymers
    heat
    cavities
    Hot Temperature
    polymers
    silicon
    profiles

    Keywords

    • Nanoprint lithography
    • scatterometry
    • step and repeat process
    • step and stamp

    Cite this

    Gourgon, C. ; Ferchichi, A.K. ; Pietroy, D. ; Haatainen, Tomi ; Tesseire, J. / Scatterometry analysis of sequentially imprinted patterns : Influence of thermal parameters. In: Microelectronic Engineering. 2012 ; Vol. 98. pp. 270-274.
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    title = "Scatterometry analysis of sequentially imprinted patterns: Influence of thermal parameters",
    abstract = "Scatterometry technique has been used to characterize Thermal Step and Repeat NIL processes in the framework of NAPANIL project. Two hundred and fifty nanometers dense lines were imprinted in mr-7030 polymer and their profiles have been analyzed and compared to the mold one. It has been demonstrated that scatterometry on silicon exhibits a very high accuracy and that a change of the sidewall verticality of only few degrees can been measured. The results show that some reflow occurs in lines during the imprint of neighboring dies due to heat diffusion. This phenomenon has been studied as a function of printing temperature, demolding temperature, and space between adjacent dies. The conclusion is that a trade off has to be made between imprint temperature and chuck temperature to be able to fill mold cavities with a limitation of the reflow.",
    keywords = "Nanoprint lithography, scatterometry, step and repeat process, step and stamp",
    author = "C. Gourgon and A.K. Ferchichi and D. Pietroy and Tomi Haatainen and J. Tesseire",
    note = "Abstract nr 79 in the conf. book of abstracts",
    year = "2012",
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    Scatterometry analysis of sequentially imprinted patterns : Influence of thermal parameters. / Gourgon, C. (Corresponding Author); Ferchichi, A.K.; Pietroy, D.; Haatainen, Tomi; Tesseire, J.

    In: Microelectronic Engineering, Vol. 98, 2012, p. 270-274.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Scatterometry analysis of sequentially imprinted patterns

    T2 - Influence of thermal parameters

    AU - Gourgon, C.

    AU - Ferchichi, A.K.

    AU - Pietroy, D.

    AU - Haatainen, Tomi

    AU - Tesseire, J.

    N1 - Abstract nr 79 in the conf. book of abstracts

    PY - 2012

    Y1 - 2012

    N2 - Scatterometry technique has been used to characterize Thermal Step and Repeat NIL processes in the framework of NAPANIL project. Two hundred and fifty nanometers dense lines were imprinted in mr-7030 polymer and their profiles have been analyzed and compared to the mold one. It has been demonstrated that scatterometry on silicon exhibits a very high accuracy and that a change of the sidewall verticality of only few degrees can been measured. The results show that some reflow occurs in lines during the imprint of neighboring dies due to heat diffusion. This phenomenon has been studied as a function of printing temperature, demolding temperature, and space between adjacent dies. The conclusion is that a trade off has to be made between imprint temperature and chuck temperature to be able to fill mold cavities with a limitation of the reflow.

    AB - Scatterometry technique has been used to characterize Thermal Step and Repeat NIL processes in the framework of NAPANIL project. Two hundred and fifty nanometers dense lines were imprinted in mr-7030 polymer and their profiles have been analyzed and compared to the mold one. It has been demonstrated that scatterometry on silicon exhibits a very high accuracy and that a change of the sidewall verticality of only few degrees can been measured. The results show that some reflow occurs in lines during the imprint of neighboring dies due to heat diffusion. This phenomenon has been studied as a function of printing temperature, demolding temperature, and space between adjacent dies. The conclusion is that a trade off has to be made between imprint temperature and chuck temperature to be able to fill mold cavities with a limitation of the reflow.

    KW - Nanoprint lithography

    KW - scatterometry

    KW - step and repeat process

    KW - step and stamp

    U2 - 10.1016/j.mee.2012.05.048

    DO - 10.1016/j.mee.2012.05.048

    M3 - Article

    VL - 98

    SP - 270

    EP - 274

    JO - Microelectronic Engineering

    JF - Microelectronic Engineering

    SN - 0167-9317

    ER -