Scatterometry analysis of sequentially imprinted patterns: Influence of thermal parameters

C. Gourgon (Corresponding Author), A.K. Ferchichi, D. Pietroy, Tomi Haatainen, J. Tesseire

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

Scatterometry technique has been used to characterize Thermal Step and Repeat NIL processes in the framework of NAPANIL project. Two hundred and fifty nanometers dense lines were imprinted in mr-7030 polymer and their profiles have been analyzed and compared to the mold one. It has been demonstrated that scatterometry on silicon exhibits a very high accuracy and that a change of the sidewall verticality of only few degrees can been measured. The results show that some reflow occurs in lines during the imprint of neighboring dies due to heat diffusion. This phenomenon has been studied as a function of printing temperature, demolding temperature, and space between adjacent dies. The conclusion is that a trade off has to be made between imprint temperature and chuck temperature to be able to fill mold cavities with a limitation of the reflow.
Original languageEnglish
Pages (from-to)270-274
Number of pages4
JournalMicroelectronic Engineering
Volume98
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed
Event37th International Conference on Micro- and Nano-Engineering, MNE 2011 - Berlin, Germany
Duration: 19 Sep 201123 Sep 2011
Conference number: 37

Fingerprint

Chucks
Temperature
temperature
Silicon
printing
Printing
Polymers
heat
cavities
Hot Temperature
polymers
silicon
profiles

Keywords

  • Nanoprint lithography
  • scatterometry
  • step and repeat process
  • step and stamp

Cite this

Gourgon, C. ; Ferchichi, A.K. ; Pietroy, D. ; Haatainen, Tomi ; Tesseire, J. / Scatterometry analysis of sequentially imprinted patterns : Influence of thermal parameters. In: Microelectronic Engineering. 2012 ; Vol. 98. pp. 270-274.
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abstract = "Scatterometry technique has been used to characterize Thermal Step and Repeat NIL processes in the framework of NAPANIL project. Two hundred and fifty nanometers dense lines were imprinted in mr-7030 polymer and their profiles have been analyzed and compared to the mold one. It has been demonstrated that scatterometry on silicon exhibits a very high accuracy and that a change of the sidewall verticality of only few degrees can been measured. The results show that some reflow occurs in lines during the imprint of neighboring dies due to heat diffusion. This phenomenon has been studied as a function of printing temperature, demolding temperature, and space between adjacent dies. The conclusion is that a trade off has to be made between imprint temperature and chuck temperature to be able to fill mold cavities with a limitation of the reflow.",
keywords = "Nanoprint lithography, scatterometry, step and repeat process, step and stamp",
author = "C. Gourgon and A.K. Ferchichi and D. Pietroy and Tomi Haatainen and J. Tesseire",
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Scatterometry analysis of sequentially imprinted patterns : Influence of thermal parameters. / Gourgon, C. (Corresponding Author); Ferchichi, A.K.; Pietroy, D.; Haatainen, Tomi; Tesseire, J.

In: Microelectronic Engineering, Vol. 98, 2012, p. 270-274.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Scatterometry analysis of sequentially imprinted patterns

T2 - Influence of thermal parameters

AU - Gourgon, C.

AU - Ferchichi, A.K.

AU - Pietroy, D.

AU - Haatainen, Tomi

AU - Tesseire, J.

N1 - Abstract nr 79 in the conf. book of abstracts

PY - 2012

Y1 - 2012

N2 - Scatterometry technique has been used to characterize Thermal Step and Repeat NIL processes in the framework of NAPANIL project. Two hundred and fifty nanometers dense lines were imprinted in mr-7030 polymer and their profiles have been analyzed and compared to the mold one. It has been demonstrated that scatterometry on silicon exhibits a very high accuracy and that a change of the sidewall verticality of only few degrees can been measured. The results show that some reflow occurs in lines during the imprint of neighboring dies due to heat diffusion. This phenomenon has been studied as a function of printing temperature, demolding temperature, and space between adjacent dies. The conclusion is that a trade off has to be made between imprint temperature and chuck temperature to be able to fill mold cavities with a limitation of the reflow.

AB - Scatterometry technique has been used to characterize Thermal Step and Repeat NIL processes in the framework of NAPANIL project. Two hundred and fifty nanometers dense lines were imprinted in mr-7030 polymer and their profiles have been analyzed and compared to the mold one. It has been demonstrated that scatterometry on silicon exhibits a very high accuracy and that a change of the sidewall verticality of only few degrees can been measured. The results show that some reflow occurs in lines during the imprint of neighboring dies due to heat diffusion. This phenomenon has been studied as a function of printing temperature, demolding temperature, and space between adjacent dies. The conclusion is that a trade off has to be made between imprint temperature and chuck temperature to be able to fill mold cavities with a limitation of the reflow.

KW - Nanoprint lithography

KW - scatterometry

KW - step and repeat process

KW - step and stamp

U2 - 10.1016/j.mee.2012.05.048

DO - 10.1016/j.mee.2012.05.048

M3 - Article

VL - 98

SP - 270

EP - 274

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -