Schottky frequency doubler for 140–220GHz using MMIC foundry process

Tero Kiuru, Krista Dahlberg, Juha Mallat, Tapani Närhi, Antti V. Raisanen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

9 Citations (Scopus)

Abstract

Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned full-waveguide band Schottky frequency doubler. The doubler consists of a GaAs MMIC chip embedded in a waveguide channel. The chip is fabricated using a commercial MMIC foundry process and two post-processing options, substrate thinning and etching around anode fingers, are implemented afterwards. The doubler is optimized for flat output power across the G-band (140-220 GHz) and for operation at low input power levels (0.5-10 mW). For example, with an input power level of 2 mW, two doublers with different post-processing options achieve output power flatness of 3.0 dB and 3.8 dB and average efficiencies of 4.0 % and 3.8 % at 140-220 GHz. The maximum measured efficiency and output power with 5 mW of input power are 6.4 % and -5.0 dBm at 204 GHz. To the authors' knowledge, these are the best published results for a full G-band frequency doubler using commercially available MMIC foundry process.
Original languageEnglish
Title of host publicationConference Proceedings
Subtitle of host publication7th European Microwave Integrated Circuits Conference, EuMIC 2012
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages84-87
ISBN (Electronic)978-2-87487-028-6
ISBN (Print)978-1-4673-2302-4
Publication statusPublished - 2012
MoE publication typeA4 Article in a conference publication
Event7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 - Amsterdam, Netherlands
Duration: 29 Oct 201230 Oct 2012
https://ieeexplore.ieee.org/xpl/conhome/6476772/proceeding (Proceedings)

Conference

Conference7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012
Abbreviated titleEUMiC 2012
CountryNetherlands
CityAmsterdam
Period29/10/1230/10/12
Internet address

Fingerprint

Frequency doublers
Monolithic microwave integrated circuits
Foundries
Waveguides
Processing
Etching
Anodes
Fabrication
Substrates

Keywords

  • Frequency doubler
  • Schottky diode
  • MMIC

Cite this

Kiuru, T., Dahlberg, K., Mallat, J., Närhi, T., & Raisanen, A. V. (2012). Schottky frequency doubler for 140–220GHz using MMIC foundry process. In Conference Proceedings: 7th European Microwave Integrated Circuits Conference, EuMIC 2012 (pp. 84-87). [6483741] IEEE Institute of Electrical and Electronic Engineers .
Kiuru, Tero ; Dahlberg, Krista ; Mallat, Juha ; Närhi, Tapani ; Raisanen, Antti V. / Schottky frequency doubler for 140–220GHz using MMIC foundry process. Conference Proceedings: 7th European Microwave Integrated Circuits Conference, EuMIC 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. pp. 84-87
@inproceedings{f15c23ad03124ee4830cb028cc24461c,
title = "Schottky frequency doubler for 140–220GHz using MMIC foundry process",
abstract = "Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned full-waveguide band Schottky frequency doubler. The doubler consists of a GaAs MMIC chip embedded in a waveguide channel. The chip is fabricated using a commercial MMIC foundry process and two post-processing options, substrate thinning and etching around anode fingers, are implemented afterwards. The doubler is optimized for flat output power across the G-band (140-220 GHz) and for operation at low input power levels (0.5-10 mW). For example, with an input power level of 2 mW, two doublers with different post-processing options achieve output power flatness of 3.0 dB and 3.8 dB and average efficiencies of 4.0 {\%} and 3.8 {\%} at 140-220 GHz. The maximum measured efficiency and output power with 5 mW of input power are 6.4 {\%} and -5.0 dBm at 204 GHz. To the authors' knowledge, these are the best published results for a full G-band frequency doubler using commercially available MMIC foundry process.",
keywords = "Frequency doubler, Schottky diode, MMIC",
author = "Tero Kiuru and Krista Dahlberg and Juha Mallat and Tapani N{\"a}rhi and Raisanen, {Antti V.}",
year = "2012",
language = "English",
isbn = "978-1-4673-2302-4",
pages = "84--87",
booktitle = "Conference Proceedings",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
address = "United States",

}

Kiuru, T, Dahlberg, K, Mallat, J, Närhi, T & Raisanen, AV 2012, Schottky frequency doubler for 140–220GHz using MMIC foundry process. in Conference Proceedings: 7th European Microwave Integrated Circuits Conference, EuMIC 2012., 6483741, IEEE Institute of Electrical and Electronic Engineers , pp. 84-87, 7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012, Amsterdam, Netherlands, 29/10/12.

Schottky frequency doubler for 140–220GHz using MMIC foundry process. / Kiuru, Tero; Dahlberg, Krista; Mallat, Juha; Närhi, Tapani; Raisanen, Antti V.

Conference Proceedings: 7th European Microwave Integrated Circuits Conference, EuMIC 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. p. 84-87 6483741.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Schottky frequency doubler for 140–220GHz using MMIC foundry process

AU - Kiuru, Tero

AU - Dahlberg, Krista

AU - Mallat, Juha

AU - Närhi, Tapani

AU - Raisanen, Antti V.

PY - 2012

Y1 - 2012

N2 - Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned full-waveguide band Schottky frequency doubler. The doubler consists of a GaAs MMIC chip embedded in a waveguide channel. The chip is fabricated using a commercial MMIC foundry process and two post-processing options, substrate thinning and etching around anode fingers, are implemented afterwards. The doubler is optimized for flat output power across the G-band (140-220 GHz) and for operation at low input power levels (0.5-10 mW). For example, with an input power level of 2 mW, two doublers with different post-processing options achieve output power flatness of 3.0 dB and 3.8 dB and average efficiencies of 4.0 % and 3.8 % at 140-220 GHz. The maximum measured efficiency and output power with 5 mW of input power are 6.4 % and -5.0 dBm at 204 GHz. To the authors' knowledge, these are the best published results for a full G-band frequency doubler using commercially available MMIC foundry process.

AB - Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned full-waveguide band Schottky frequency doubler. The doubler consists of a GaAs MMIC chip embedded in a waveguide channel. The chip is fabricated using a commercial MMIC foundry process and two post-processing options, substrate thinning and etching around anode fingers, are implemented afterwards. The doubler is optimized for flat output power across the G-band (140-220 GHz) and for operation at low input power levels (0.5-10 mW). For example, with an input power level of 2 mW, two doublers with different post-processing options achieve output power flatness of 3.0 dB and 3.8 dB and average efficiencies of 4.0 % and 3.8 % at 140-220 GHz. The maximum measured efficiency and output power with 5 mW of input power are 6.4 % and -5.0 dBm at 204 GHz. To the authors' knowledge, these are the best published results for a full G-band frequency doubler using commercially available MMIC foundry process.

KW - Frequency doubler

KW - Schottky diode

KW - MMIC

M3 - Conference article in proceedings

SN - 978-1-4673-2302-4

SP - 84

EP - 87

BT - Conference Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Kiuru T, Dahlberg K, Mallat J, Närhi T, Raisanen AV. Schottky frequency doubler for 140–220GHz using MMIC foundry process. In Conference Proceedings: 7th European Microwave Integrated Circuits Conference, EuMIC 2012. IEEE Institute of Electrical and Electronic Engineers . 2012. p. 84-87. 6483741