Schottky frequency doubler for 140–220GHz using MMIC foundry process

Tero Kiuru; Krista Dahlberg; Juha Mallat; Tapani Närhi; Antti V. Raisanen

Schottky frequency doubler for 140–220GHz using MMIC foundry process

Tero Kiuru, Krista Dahlberg, Juha Mallat, Tapani Närhi, Antti V. Raisanen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

16 Citations (Scopus)

Abstract

Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned full-waveguide band Schottky frequency doubler. The doubler consists of a GaAs MMIC chip embedded in a waveguide channel. The chip is fabricated using a commercial MMIC foundry process and two post-processing options, substrate thinning and etching around anode fingers, are implemented afterwards. The doubler is optimized for flat output power across the G-band (140-220 GHz) and for operation at low input power levels (0.5-10 mW). For example, with an input power level of 2 mW, two doublers with different post-processing options achieve output power flatness of 3.0 dB and 3.8 dB and average efficiencies of 4.0 % and 3.8 % at 140-220 GHz. The maximum measured efficiency and output power with 5 mW of input power are 6.4 % and -5.0 dBm at 204 GHz. To the authors' knowledge, these are the best published results for a full G-band frequency doubler using commercially available MMIC foundry process.

Original language	English
Title of host publication	Conference Proceedings
Subtitle of host publication	7th European Microwave Integrated Circuits Conference, EuMIC 2012
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	84-87
ISBN (Electronic)	978-2-87487-028-6
ISBN (Print)	978-1-4673-2302-4
Publication status	Published - 2012
MoE publication type	A4 Article in a conference publication
Event	7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 - Amsterdam, Netherlands Duration: 29 Oct 2012 → 30 Oct 2012 https://ieeexplore.ieee.org/xpl/conhome/6476772/proceeding (Proceedings)

Conference

Conference	7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012
Abbreviated title	EUMiC 2012
Country/Territory	Netherlands
City	Amsterdam
Period	29/10/12 → 30/10/12
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6476772/proceeding (Proceedings)

Keywords

Frequency doubler
Schottky diode
MMIC

Access to Document

https://ieeexplore.ieee.org/document/6483741

Cite this

@inproceedings{f15c23ad03124ee4830cb028cc24461c,

title = "Schottky frequency doubler for 140–220GHz using MMIC foundry process",

abstract = "Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned full-waveguide band Schottky frequency doubler. The doubler consists of a GaAs MMIC chip embedded in a waveguide channel. The chip is fabricated using a commercial MMIC foundry process and two post-processing options, substrate thinning and etching around anode fingers, are implemented afterwards. The doubler is optimized for flat output power across the G-band (140-220 GHz) and for operation at low input power levels (0.5-10 mW). For example, with an input power level of 2 mW, two doublers with different post-processing options achieve output power flatness of 3.0 dB and 3.8 dB and average efficiencies of 4.0 % and 3.8 % at 140-220 GHz. The maximum measured efficiency and output power with 5 mW of input power are 6.4 % and -5.0 dBm at 204 GHz. To the authors' knowledge, these are the best published results for a full G-band frequency doubler using commercially available MMIC foundry process.",

keywords = "Frequency doubler, Schottky diode, MMIC",

author = "Tero Kiuru and Krista Dahlberg and Juha Mallat and Tapani N{\"a}rhi and Raisanen, {Antti V.}",

year = "2012",

language = "English",

isbn = "978-1-4673-2302-4",

pages = "84--87",

booktitle = "Conference Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012, EUMiC 2012 ; Conference date: 29-10-2012 Through 30-10-2012",

url = "https://ieeexplore.ieee.org/xpl/conhome/6476772/proceeding",

}

Kiuru, T, Dahlberg, K, Mallat, J, Närhi, T & Raisanen, AV 2012, Schottky frequency doubler for 140–220GHz using MMIC foundry process. in Conference Proceedings: 7th European Microwave Integrated Circuits Conference, EuMIC 2012., 6483741, IEEE Institute of Electrical and Electronic Engineers, pp. 84-87, 7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012, Amsterdam, Netherlands, 29/10/12. <https://ieeexplore.ieee.org/document/6483741>

Schottky frequency doubler for 140–220GHz using MMIC foundry process. / Kiuru, Tero; Dahlberg, Krista; Mallat, Juha et al.
Conference Proceedings: 7th European Microwave Integrated Circuits Conference, EuMIC 2012. IEEE Institute of Electrical and Electronic Engineers, 2012. p. 84-87 6483741.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Schottky frequency doubler for 140–220GHz using MMIC foundry process

AU - Kiuru, Tero

AU - Dahlberg, Krista

AU - Mallat, Juha

AU - Närhi, Tapani

AU - Raisanen, Antti V.

PY - 2012

Y1 - 2012

N2 - Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned full-waveguide band Schottky frequency doubler. The doubler consists of a GaAs MMIC chip embedded in a waveguide channel. The chip is fabricated using a commercial MMIC foundry process and two post-processing options, substrate thinning and etching around anode fingers, are implemented afterwards. The doubler is optimized for flat output power across the G-band (140-220 GHz) and for operation at low input power levels (0.5-10 mW). For example, with an input power level of 2 mW, two doublers with different post-processing options achieve output power flatness of 3.0 dB and 3.8 dB and average efficiencies of 4.0 % and 3.8 % at 140-220 GHz. The maximum measured efficiency and output power with 5 mW of input power are 6.4 % and -5.0 dBm at 204 GHz. To the authors' knowledge, these are the best published results for a full G-band frequency doubler using commercially available MMIC foundry process.

AB - Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned full-waveguide band Schottky frequency doubler. The doubler consists of a GaAs MMIC chip embedded in a waveguide channel. The chip is fabricated using a commercial MMIC foundry process and two post-processing options, substrate thinning and etching around anode fingers, are implemented afterwards. The doubler is optimized for flat output power across the G-band (140-220 GHz) and for operation at low input power levels (0.5-10 mW). For example, with an input power level of 2 mW, two doublers with different post-processing options achieve output power flatness of 3.0 dB and 3.8 dB and average efficiencies of 4.0 % and 3.8 % at 140-220 GHz. The maximum measured efficiency and output power with 5 mW of input power are 6.4 % and -5.0 dBm at 204 GHz. To the authors' knowledge, these are the best published results for a full G-band frequency doubler using commercially available MMIC foundry process.

KW - Frequency doubler

KW - Schottky diode

KW - MMIC

M3 - Conference article in proceedings

SN - 978-1-4673-2302-4

SP - 84

EP - 87

BT - Conference Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012

Y2 - 29 October 2012 through 30 October 2012

ER -

Schottky frequency doubler for 140–220GHz using MMIC foundry process

Abstract

Conference

Keywords

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