Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.
    Original languageEnglish
    Title of host publicationFrequency Control Symposium & the European Frequency and Time Forum (FCS)
    Subtitle of host publication2015 Joint Conference of the IEEE International
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages420-422
    ISBN (Electronic)978-1-4799-8865-5, 978-1-4799-8866-2
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA4 Article in a conference publication
    EventIEEE International Frequency Control Symposium and European Frequency and Time Forum - Denver, United States
    Duration: 12 Apr 201516 Apr 2015

    Conference

    ConferenceIEEE International Frequency Control Symposium and European Frequency and Time Forum
    Abbreviated titleIFCS/EFTF
    CountryUnited States
    CityDenver
    Period12/04/1516/04/15

    Fingerprint

    resonators
    temperature compensation
    silicon
    microelectromechanical systems
    temperature
    frequency stability
    quartz crystals
    quartz
    elastic properties
    geometry

    Keywords

    • silicon
    • resonant frequency
    • Thermal stability
    • Micromechanical devices
    • temperature measurement
    • frequency measurement
    • temperature

    Cite this

    Jaakkola, A., Pekko, P., Dekker, J. R., Prunnila, M., & Pensala, T. (2015). Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. In Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International (pp. 420-422). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/FCS.2015.7138871
    Jaakkola, Antti ; Pekko, Panu ; Dekker, James R. ; Prunnila, Mika ; Pensala, Tuomas. / Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. IEEE Institute of Electrical and Electronic Engineers , 2015. pp. 420-422
    @inproceedings{20e64b5f5eaa41458023207360718aa3,
    title = "Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability",
    abstract = "We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.",
    keywords = "silicon, resonant frequency, Thermal stability, Micromechanical devices, temperature measurement, frequency measurement, temperature",
    author = "Antti Jaakkola and Panu Pekko and Dekker, {James R.} and Mika Prunnila and Tuomas Pensala",
    year = "2015",
    doi = "10.1109/FCS.2015.7138871",
    language = "English",
    pages = "420--422",
    booktitle = "Frequency Control Symposium & the European Frequency and Time Forum (FCS)",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Jaakkola, A, Pekko, P, Dekker, JR, Prunnila, M & Pensala, T 2015, Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. in Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. IEEE Institute of Electrical and Electronic Engineers , pp. 420-422, IEEE International Frequency Control Symposium and European Frequency and Time Forum, Denver, United States, 12/04/15. https://doi.org/10.1109/FCS.2015.7138871

    Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. / Jaakkola, Antti; Pekko, Panu; Dekker, James R.; Prunnila, Mika; Pensala, Tuomas.

    Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. IEEE Institute of Electrical and Electronic Engineers , 2015. p. 420-422.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    T1 - Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability

    AU - Jaakkola, Antti

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    AU - Dekker, James R.

    AU - Prunnila, Mika

    AU - Pensala, Tuomas

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    Y1 - 2015

    N2 - We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.

    AB - We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.

    KW - silicon

    KW - resonant frequency

    KW - Thermal stability

    KW - Micromechanical devices

    KW - temperature measurement

    KW - frequency measurement

    KW - temperature

    U2 - 10.1109/FCS.2015.7138871

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    Jaakkola A, Pekko P, Dekker JR, Prunnila M, Pensala T. Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. In Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. IEEE Institute of Electrical and Electronic Engineers . 2015. p. 420-422 https://doi.org/10.1109/FCS.2015.7138871