Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability

Antti Jaakkola, Panu Pekko, James R. Dekker, Mika Prunnila, Tuomas Pensala

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.
Original languageEnglish
Title of host publicationFrequency Control Symposium & the European Frequency and Time Forum (FCS)
Subtitle of host publication2015 Joint Conference of the IEEE International
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages420-422
ISBN (Electronic)978-1-4799-8865-5, 978-1-4799-8866-2
DOIs
Publication statusPublished - 2015
MoE publication typeA4 Article in a conference publication
EventIEEE International Frequency Control Symposium and European Frequency and Time Forum - Denver, United States
Duration: 12 Apr 201516 Apr 2015

Publication series

Name
ISSN (Print)2327-1914
ISSN (Electronic)2327-1949

Conference

ConferenceIEEE International Frequency Control Symposium and European Frequency and Time Forum
Abbreviated titleIFCS/EFTF
CountryUnited States
CityDenver
Period12/04/1516/04/15

Fingerprint

resonators
temperature compensation
silicon
microelectromechanical systems
temperature
frequency stability
quartz crystals
quartz
elastic properties
geometry

Keywords

  • silicon
  • resonant frequency
  • Thermal stability
  • Micromechanical devices
  • temperature measurement
  • frequency measurement
  • temperature

Cite this

Jaakkola, A., Pekko, P., Dekker, J. R., Prunnila, M., & Pensala, T. (2015). Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. In Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International (pp. 420-422). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/FCS.2015.7138871
Jaakkola, Antti ; Pekko, Panu ; Dekker, James R. ; Prunnila, Mika ; Pensala, Tuomas. / Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. Institute of Electrical and Electronic Engineers IEEE, 2015. pp. 420-422
@inproceedings{20e64b5f5eaa41458023207360718aa3,
title = "Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability",
abstract = "We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.",
keywords = "silicon, resonant frequency, Thermal stability, Micromechanical devices, temperature measurement, frequency measurement, temperature",
author = "Antti Jaakkola and Panu Pekko and Dekker, {James R.} and Mika Prunnila and Tuomas Pensala",
year = "2015",
doi = "10.1109/FCS.2015.7138871",
language = "English",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
pages = "420--422",
booktitle = "Frequency Control Symposium & the European Frequency and Time Forum (FCS)",
address = "United States",

}

Jaakkola, A, Pekko, P, Dekker, JR, Prunnila, M & Pensala, T 2015, Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. in Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. Institute of Electrical and Electronic Engineers IEEE, pp. 420-422, IEEE International Frequency Control Symposium and European Frequency and Time Forum, Denver, United States, 12/04/15. https://doi.org/10.1109/FCS.2015.7138871

Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. / Jaakkola, Antti; Pekko, Panu; Dekker, James R.; Prunnila, Mika; Pensala, Tuomas.

Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. Institute of Electrical and Electronic Engineers IEEE, 2015. p. 420-422.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability

AU - Jaakkola, Antti

AU - Pekko, Panu

AU - Dekker, James R.

AU - Prunnila, Mika

AU - Pensala, Tuomas

PY - 2015

Y1 - 2015

N2 - We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.

AB - We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.

KW - silicon

KW - resonant frequency

KW - Thermal stability

KW - Micromechanical devices

KW - temperature measurement

KW - frequency measurement

KW - temperature

U2 - 10.1109/FCS.2015.7138871

DO - 10.1109/FCS.2015.7138871

M3 - Conference article in proceedings

SP - 420

EP - 422

BT - Frequency Control Symposium & the European Frequency and Time Forum (FCS)

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Jaakkola A, Pekko P, Dekker JR, Prunnila M, Pensala T. Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. In Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. Institute of Electrical and Electronic Engineers IEEE. 2015. p. 420-422 https://doi.org/10.1109/FCS.2015.7138871