Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.
    Original languageEnglish
    Title of host publicationFrequency Control Symposium & the European Frequency and Time Forum (FCS)
    Subtitle of host publication2015 Joint Conference of the IEEE International
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages420-422
    ISBN (Electronic)978-1-4799-8865-5, 978-1-4799-8866-2
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA4 Article in a conference publication
    EventIEEE International Frequency Control Symposium and European Frequency and Time Forum - Denver, United States
    Duration: 12 Apr 201516 Apr 2015

    Conference

    ConferenceIEEE International Frequency Control Symposium and European Frequency and Time Forum
    Abbreviated titleIFCS/EFTF
    CountryUnited States
    CityDenver
    Period12/04/1516/04/15

    Keywords

    • silicon
    • resonant frequency
    • Thermal stability
    • Micromechanical devices
    • temperature measurement
    • frequency measurement
    • temperature

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