Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability

Antti Jaakkola; Panu Pekko; James R. Dekker; Mika Prunnila; Tuomas Pensala

doi:10.1109/FCS.2015.7138871

Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability

Antti Jaakkola
, Panu Pekko
, James R. Dekker
, Mika Prunnila
, Tuomas Pensala

VTT (former employee or external)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

6 Citations (Scopus)

Abstract

We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 10²⁰cm^-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.

Original language	English
Title of host publication	Frequency Control Symposium & the European Frequency and Time Forum (FCS)
Subtitle of host publication	2015 Joint Conference of the IEEE International
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	420-422
ISBN (Electronic)	978-1-4799-8865-5, 978-1-4799-8866-2
DOIs	https://doi.org/10.1109/FCS.2015.7138871
Publication status	Published - 2015
MoE publication type	A4 Article in a conference publication
Event	IEEE International Frequency Control Symposium and European Frequency and Time Forum - Denver, United States Duration: 12 Apr 2015 → 16 Apr 2015

Conference

Conference	IEEE International Frequency Control Symposium and European Frequency and Time Forum
Abbreviated title	IFCS/EFTF
Country/Territory	United States
City	Denver
Period	12/04/15 → 16/04/15

Keywords

silicon
resonant frequency
Thermal stability
Micromechanical devices
temperature measurement
frequency measurement
temperature

Access to Document

10.1109/FCS.2015.7138871

Cite this

Jaakkola, A., Pekko, P., Dekker, J. R., Prunnila, M., & Pensala, T. (2015). Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. In Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International (pp. 420-422). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/FCS.2015.7138871

Jaakkola, Antti ; Pekko, Panu ; Dekker, James R. et al. / Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. IEEE Institute of Electrical and Electronic Engineers, 2015. pp. 420-422

@inproceedings{20e64b5f5eaa41458023207360718aa3,

title = "Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability",

abstract = "We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.",

keywords = "silicon, resonant frequency, Thermal stability, Micromechanical devices, temperature measurement, frequency measurement, temperature",

author = "Antti Jaakkola and Panu Pekko and Dekker, \{James R.\} and Mika Prunnila and Tuomas Pensala",

year = "2015",

doi = "10.1109/FCS.2015.7138871",

language = "English",

pages = "420--422",

booktitle = "Frequency Control Symposium \& the European Frequency and Time Forum (FCS)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "IEEE International Frequency Control Symposium and European Frequency and Time Forum, IFCS/EFTF ; Conference date: 12-04-2015 Through 16-04-2015",

}

Jaakkola, A, Pekko, P, Dekker, JR, Prunnila, M & Pensala, T 2015, Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. in Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. IEEE Institute of Electrical and Electronic Engineers, pp. 420-422, IEEE International Frequency Control Symposium and European Frequency and Time Forum, Denver, Colorado, United States, 12/04/15. https://doi.org/10.1109/FCS.2015.7138871

Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. / Jaakkola, Antti; Pekko, Panu; Dekker, James R. et al.
Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. IEEE Institute of Electrical and Electronic Engineers, 2015. p. 420-422.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability

AU - Jaakkola, Antti

AU - Pekko, Panu

AU - Dekker, James R.

AU - Prunnila, Mika

AU - Pensala, Tuomas

PY - 2015

Y1 - 2015

N2 - We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.

AB - We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020cm-3, and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.

KW - silicon

KW - resonant frequency

KW - Thermal stability

KW - Micromechanical devices

KW - temperature measurement

KW - frequency measurement

KW - temperature

U2 - 10.1109/FCS.2015.7138871

DO - 10.1109/FCS.2015.7138871

M3 - Conference article in proceedings

SP - 420

EP - 422

BT - Frequency Control Symposium & the European Frequency and Time Forum (FCS)

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - IEEE International Frequency Control Symposium and European Frequency and Time Forum

Y2 - 12 April 2015 through 16 April 2015

ER -

Jaakkola A, Pekko P, Dekker JR, Prunnila M , Pensala T. Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability. In Frequency Control Symposium & the European Frequency and Time Forum (FCS): 2015 Joint Conference of the IEEE International. IEEE Institute of Electrical and Electronic Engineers. 2015. p. 420-422 doi: 10.1109/FCS.2015.7138871

Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability

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