Selective growth of InGaAs on nanoscale InP islands

Jouni Ahopelto, Harri Lipsanen, Markku Sopanen, Timo Koljonen

    Research output: Contribution to journalArticleScientificpeer-review

    42 Citations (Scopus)


    The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.
    Original languageEnglish
    Pages (from-to)1662-1664
    Number of pages3
    JournalApplied Physics Letters
    Issue number13
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed


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