Selective growth of InGaAs on nanoscale InP islands

Jouni Ahopelto, Harri Lipsanen, Markku Sopanen, Timo Koljonen

Research output: Contribution to journalArticleScientificpeer-review

42 Citations (Scopus)

Abstract

The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.
Original languageEnglish
Pages (from-to)1662-1664
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number13
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

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quantum wells
vapor phase epitaxy
insertion
photoluminescence
excitation

Cite this

Ahopelto, Jouni ; Lipsanen, Harri ; Sopanen, Markku ; Koljonen, Timo. / Selective growth of InGaAs on nanoscale InP islands. In: Applied Physics Letters. 1994 ; Vol. 65, No. 13. pp. 1662-1664.
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Ahopelto, J, Lipsanen, H, Sopanen, M & Koljonen, T 1994, 'Selective growth of InGaAs on nanoscale InP islands', Applied Physics Letters, vol. 65, no. 13, pp. 1662-1664. https://doi.org/10.1063/1.112903

Selective growth of InGaAs on nanoscale InP islands. / Ahopelto, Jouni; Lipsanen, Harri; Sopanen, Markku; Koljonen, Timo.

In: Applied Physics Letters, Vol. 65, No. 13, 1994, p. 1662-1664.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Selective growth of InGaAs on nanoscale InP islands

AU - Ahopelto, Jouni

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Koljonen, Timo

PY - 1994

Y1 - 1994

N2 - The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.

AB - The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.

U2 - 10.1063/1.112903

DO - 10.1063/1.112903

M3 - Article

VL - 65

SP - 1662

EP - 1664

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -