Selective growth of InGaAs on nanoscale InP islands

Jouni Ahopelto; Harri Lipsanen; Markku Sopanen; Timo Koljonen

doi:10.1063/1.112903

Selective growth of InGaAs on nanoscale InP islands

Jouni Ahopelto, Harri Lipsanen, Markku Sopanen, Timo Koljonen

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.

Original language	English
Pages (from-to)	1662-1664
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	13
DOIs	https://doi.org/10.1063/1.112903
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed

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title = "Selective growth of InGaAs on nanoscale InP islands",

abstract = "The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.",

author = "Jouni Ahopelto and Harri Lipsanen and Markku Sopanen and Timo Koljonen",

year = "1994",

doi = "10.1063/1.112903",

language = "English",

volume = "65",

pages = "1662--1664",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

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T1 - Selective growth of InGaAs on nanoscale InP islands

AU - Ahopelto, Jouni

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Koljonen, Timo

PY - 1994

Y1 - 1994

N2 - The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.

AB - The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.

U2 - 10.1063/1.112903

DO - 10.1063/1.112903

M3 - Article

SN - 0003-6951

VL - 65

SP - 1662

EP - 1664

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Selective growth of InGaAs on nanoscale InP islands

Abstract

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