Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

Y.T. Sun, E. Rodriguez Messmer, S. Lourdudoss, Jouni Ahopelto, S. Rennon, J.P. Reithmaier, A. Forchel

    Research output: Contribution to journalArticleScientificpeer-review

    10 Citations (Scopus)

    Abstract

    The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.
    Original languageEnglish
    Pages (from-to)1885-1887
    Number of pages3
    JournalApplied Physics Letters
    Volume79
    Issue number12
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

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    vapor phase epitaxy
    hydrides
    ion beams
    quantum wires
    integrated circuits
    implantation
    wire
    dosage
    fabrication
    electronics

    Cite this

    Sun, Y. T., Rodriguez Messmer, E., Lourdudoss, S., Ahopelto, J., Rennon, S., Reithmaier, J. P., & Forchel, A. (2001). Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy. Applied Physics Letters, 79(12), 1885-1887. https://doi.org/10.1063/1.1401781
    Sun, Y.T. ; Rodriguez Messmer, E. ; Lourdudoss, S. ; Ahopelto, Jouni ; Rennon, S. ; Reithmaier, J.P. ; Forchel, A. / Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy. In: Applied Physics Letters. 2001 ; Vol. 79, No. 12. pp. 1885-1887.
    @article{d8222dafa8584051809d286a2f00f6f0,
    title = "Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy",
    abstract = "The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.",
    author = "Y.T. Sun and {Rodriguez Messmer}, E. and S. Lourdudoss and Jouni Ahopelto and S. Rennon and J.P. Reithmaier and A. Forchel",
    year = "2001",
    doi = "10.1063/1.1401781",
    language = "English",
    volume = "79",
    pages = "1885--1887",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    number = "12",

    }

    Sun, YT, Rodriguez Messmer, E, Lourdudoss, S, Ahopelto, J, Rennon, S, Reithmaier, JP & Forchel, A 2001, 'Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy', Applied Physics Letters, vol. 79, no. 12, pp. 1885-1887. https://doi.org/10.1063/1.1401781

    Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy. / Sun, Y.T.; Rodriguez Messmer, E.; Lourdudoss, S.; Ahopelto, Jouni; Rennon, S.; Reithmaier, J.P.; Forchel, A.

    In: Applied Physics Letters, Vol. 79, No. 12, 2001, p. 1885-1887.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

    AU - Sun, Y.T.

    AU - Rodriguez Messmer, E.

    AU - Lourdudoss, S.

    AU - Ahopelto, Jouni

    AU - Rennon, S.

    AU - Reithmaier, J.P.

    AU - Forchel, A.

    PY - 2001

    Y1 - 2001

    N2 - The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.

    AB - The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.

    U2 - 10.1063/1.1401781

    DO - 10.1063/1.1401781

    M3 - Article

    VL - 79

    SP - 1885

    EP - 1887

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 12

    ER -