Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

Y.T. Sun, E. Rodriguez Messmer, S. Lourdudoss, Jouni Ahopelto, S. Rennon, J.P. Reithmaier, A. Forchel

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.
Original languageEnglish
Pages (from-to)1885-1887
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number12
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

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vapor phase epitaxy
hydrides
ion beams
quantum wires
integrated circuits
implantation
wire
dosage
fabrication
electronics

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Sun, Y. T., Rodriguez Messmer, E., Lourdudoss, S., Ahopelto, J., Rennon, S., Reithmaier, J. P., & Forchel, A. (2001). Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy. Applied Physics Letters, 79(12), 1885-1887. https://doi.org/10.1063/1.1401781
Sun, Y.T. ; Rodriguez Messmer, E. ; Lourdudoss, S. ; Ahopelto, Jouni ; Rennon, S. ; Reithmaier, J.P. ; Forchel, A. / Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy. In: Applied Physics Letters. 2001 ; Vol. 79, No. 12. pp. 1885-1887.
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title = "Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy",
abstract = "The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.",
author = "Y.T. Sun and {Rodriguez Messmer}, E. and S. Lourdudoss and Jouni Ahopelto and S. Rennon and J.P. Reithmaier and A. Forchel",
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Sun, YT, Rodriguez Messmer, E, Lourdudoss, S, Ahopelto, J, Rennon, S, Reithmaier, JP & Forchel, A 2001, 'Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy', Applied Physics Letters, vol. 79, no. 12, pp. 1885-1887. https://doi.org/10.1063/1.1401781

Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy. / Sun, Y.T.; Rodriguez Messmer, E.; Lourdudoss, S.; Ahopelto, Jouni; Rennon, S.; Reithmaier, J.P.; Forchel, A.

In: Applied Physics Letters, Vol. 79, No. 12, 2001, p. 1885-1887.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

AU - Sun, Y.T.

AU - Rodriguez Messmer, E.

AU - Lourdudoss, S.

AU - Ahopelto, Jouni

AU - Rennon, S.

AU - Reithmaier, J.P.

AU - Forchel, A.

PY - 2001

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N2 - The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.

AB - The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.

U2 - 10.1063/1.1401781

DO - 10.1063/1.1401781

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EP - 1887

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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