Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

Y.T. Sun; E. Rodriguez Messmer; S. Lourdudoss; Jouni Ahopelto; S. Rennon; J.P. Reithmaier; A. Forchel

doi:10.1063/1.1401781

Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

Y.T. Sun, E. Rodriguez Messmer, S. Lourdudoss, Jouni Ahopelto, S. Rennon, J.P. Reithmaier, A. Forchel

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Abstract

The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.

Original language	English
Pages (from-to)	1885-1887
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	12
DOIs	https://doi.org/10.1063/1.1401781
Publication status	Published - 2001
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.1401781

Cite this

@article{d8222dafa8584051809d286a2f00f6f0,

title = "Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy",

abstract = "The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.",

author = "Y.T. Sun and {Rodriguez Messmer}, E. and S. Lourdudoss and Jouni Ahopelto and S. Rennon and J.P. Reithmaier and A. Forchel",

year = "2001",

doi = "10.1063/1.1401781",

language = "English",

volume = "79",

pages = "1885--1887",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "12",

}

TY - JOUR

T1 - Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

AU - Sun, Y.T.

AU - Rodriguez Messmer, E.

AU - Lourdudoss, S.

AU - Ahopelto, Jouni

AU - Rennon, S.

AU - Reithmaier, J.P.

AU - Forchel, A.

PY - 2001

Y1 - 2001

N2 - The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.

AB - The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.

U2 - 10.1063/1.1401781

DO - 10.1063/1.1401781

M3 - Article

SN - 0003-6951

VL - 79

SP - 1885

EP - 1887

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

Abstract

Access to Document

Fingerprint

Cite this