Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

Y.T. Sun, E. Rodriguez Messmer, S. Lourdudoss, Jouni Ahopelto, S. Rennon, J.P. Reithmaier, A. Forchel

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    Abstract

    The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.
    Original languageEnglish
    Pages (from-to)1885-1887
    Number of pages3
    JournalApplied Physics Letters
    Volume79
    Issue number12
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

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  • Cite this

    Sun, Y. T., Rodriguez Messmer, E., Lourdudoss, S., Ahopelto, J., Rennon, S., Reithmaier, J. P., & Forchel, A. (2001). Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy. Applied Physics Letters, 79(12), 1885-1887. https://doi.org/10.1063/1.1401781