Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy
- Y.T. Sun
- , E. Rodriguez Messmer
- , S. Lourdudoss
- , Jouni Ahopelto
- , S. Rennon
- , J.P. Reithmaier
- , A. Forchel
- KTH Royal Institute of Technology
- Julius-Maximilians-Universität Würzburg
Research output: Contribution to journal › Article › Scientific › peer-review
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