Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits

R. Malmqvist, R. Jonsson, C. Samuelsson, S. Reyaz, A. ouacha, Pekka Rantakari, Tauno Vähä-Heikkilä, Jussi Varis, J. Rydberg

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

8 Citations (Scopus)

Abstract

This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin=24-31 dBm with Vbias=0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits
Original languageEnglish
Title of host publicationProceedings of the 2012 International Semiconductor Conference, CAS 2012
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages217-220
ISBN (Electronic)978-1-4673-0738-3
ISBN (Print)978-1-4673-0737-6
DOIs
Publication statusPublished - 2012
MoE publication typeA4 Article in a conference publication
Event35th International Semiconductor Conference, CAS 2012 - Sinaia, Romania
Duration: 15 Nov 201217 Nov 2012

Conference

Conference35th International Semiconductor Conference, CAS 2012
Abbreviated titleCAS 2012
CountryRomania
CitySinaia
Period15/11/1217/11/12

Fingerprint

Ohmic contacts
Limiters
MEMS
Switches
Networks (circuits)
Quartz

Keywords

  • Limiter
  • radio frequency micro-electro-mechanical systems (RF MEMS)
  • self-actuation
  • switches

Cite this

Malmqvist, R., Jonsson, R., Samuelsson, C., Reyaz, S., ouacha, A., Rantakari, P., ... Rydberg, J. (2012). Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits. In Proceedings of the 2012 International Semiconductor Conference, CAS 2012 (pp. 217-220). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/SMICND.2012.6400650
Malmqvist, R. ; Jonsson, R. ; Samuelsson, C. ; Reyaz, S. ; ouacha, A. ; Rantakari, Pekka ; Vähä-Heikkilä, Tauno ; Varis, Jussi ; Rydberg, J. / Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits. Proceedings of the 2012 International Semiconductor Conference, CAS 2012. Institute of Electrical and Electronic Engineers IEEE, 2012. pp. 217-220
@inproceedings{7338679d573744efac0f30083cfdbdb9,
title = "Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits",
abstract = "This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin=24-31 dBm with Vbias=0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits",
keywords = "Limiter, radio frequency micro-electro-mechanical systems (RF MEMS), self-actuation, switches",
author = "R. Malmqvist and R. Jonsson and C. Samuelsson and S. Reyaz and A. ouacha and Pekka Rantakari and Tauno V{\"a}h{\"a}-Heikkil{\"a} and Jussi Varis and J. Rydberg",
note = "Project code: 20392",
year = "2012",
doi = "10.1109/SMICND.2012.6400650",
language = "English",
isbn = "978-1-4673-0737-6",
pages = "217--220",
booktitle = "Proceedings of the 2012 International Semiconductor Conference, CAS 2012",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Malmqvist, R, Jonsson, R, Samuelsson, C, Reyaz, S, ouacha, A, Rantakari, P, Vähä-Heikkilä, T, Varis, J & Rydberg, J 2012, Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits. in Proceedings of the 2012 International Semiconductor Conference, CAS 2012. Institute of Electrical and Electronic Engineers IEEE, pp. 217-220, 35th International Semiconductor Conference, CAS 2012, Sinaia, Romania, 15/11/12. https://doi.org/10.1109/SMICND.2012.6400650

Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits. / Malmqvist, R.; Jonsson, R.; Samuelsson, C.; Reyaz, S.; ouacha, A.; Rantakari, Pekka; Vähä-Heikkilä, Tauno; Varis, Jussi; Rydberg, J.

Proceedings of the 2012 International Semiconductor Conference, CAS 2012. Institute of Electrical and Electronic Engineers IEEE, 2012. p. 217-220.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits

AU - Malmqvist, R.

AU - Jonsson, R.

AU - Samuelsson, C.

AU - Reyaz, S.

AU - ouacha, A.

AU - Rantakari, Pekka

AU - Vähä-Heikkilä, Tauno

AU - Varis, Jussi

AU - Rydberg, J.

N1 - Project code: 20392

PY - 2012

Y1 - 2012

N2 - This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin=24-31 dBm with Vbias=0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits

AB - This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin=24-31 dBm with Vbias=0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits

KW - Limiter

KW - radio frequency micro-electro-mechanical systems (RF MEMS)

KW - self-actuation

KW - switches

U2 - 10.1109/SMICND.2012.6400650

DO - 10.1109/SMICND.2012.6400650

M3 - Conference article in proceedings

SN - 978-1-4673-0737-6

SP - 217

EP - 220

BT - Proceedings of the 2012 International Semiconductor Conference, CAS 2012

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Malmqvist R, Jonsson R, Samuelsson C, Reyaz S, ouacha A, Rantakari P et al. Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits. In Proceedings of the 2012 International Semiconductor Conference, CAS 2012. Institute of Electrical and Electronic Engineers IEEE. 2012. p. 217-220 https://doi.org/10.1109/SMICND.2012.6400650