Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits

R. Malmqvist; R. Jonsson; C. Samuelsson; S. Reyaz; A. Ouacha; Pekka Rantakari; Tauno Vähä-Heikkilä; Jussi Varis; J. Rydberg

doi:10.1109/SMICND.2012.6400650

Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits

R. Malmqvist
, R. Jonsson
, C. Samuelsson
, S. Reyaz
, A. Ouacha
, Pekka Rantakari
, Tauno Vähä-Heikkilä
, Jussi Varis
, J. Rydberg

Swedish Defence Research Agency
Uppsala University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

11 Citations (Scopus)

Abstract

This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin=24-31 dBm with Vbias=0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits

Original language	English
Title of host publication	Proceedings of the 2012 International Semiconductor Conference, CAS 2012
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	217-220
ISBN (Electronic)	978-1-4673-0738-3
ISBN (Print)	978-1-4673-0737-6
DOIs	https://doi.org/10.1109/SMICND.2012.6400650
Publication status	Published - 2012
MoE publication type	A4 Article in a conference publication
Event	35th International Semiconductor Conference, CAS 2012 - Sinaia, Romania Duration: 15 Nov 2012 → 17 Nov 2012

Conference

Conference	35th International Semiconductor Conference, CAS 2012
Abbreviated title	CAS 2012
Country/Territory	Romania
City	Sinaia
Period	15/11/12 → 17/11/12

Keywords

Limiter
radio frequency micro-electro-mechanical systems (RF MEMS)
self-actuation
switches

Access to Document

10.1109/SMICND.2012.6400650

Cite this

Malmqvist, R., Jonsson, R., Samuelsson, C., Reyaz, S., Ouacha, A., Rantakari, P., Vähä-Heikkilä, T., Varis, J., & Rydberg, J. (2012). Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits. In Proceedings of the 2012 International Semiconductor Conference, CAS 2012 (pp. 217-220). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/SMICND.2012.6400650

@inproceedings{7338679d573744efac0f30083cfdbdb9,

title = "Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits",

abstract = "This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin=24-31 dBm with Vbias=0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits",

keywords = "Limiter, radio frequency micro-electro-mechanical systems (RF MEMS), self-actuation, switches",

author = "R. Malmqvist and R. Jonsson and C. Samuelsson and S. Reyaz and A. Ouacha and Pekka Rantakari and Tauno V{\"a}h{\"a}-Heikkil{\"a} and Jussi Varis and J. Rydberg",

note = "Project code: 20392; 35th International Semiconductor Conference, CAS 2012, CAS 2012 ; Conference date: 15-11-2012 Through 17-11-2012",

year = "2012",

doi = "10.1109/SMICND.2012.6400650",

language = "English",

isbn = "978-1-4673-0737-6",

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booktitle = "Proceedings of the 2012 International Semiconductor Conference, CAS 2012",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

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}

Malmqvist, R, Jonsson, R, Samuelsson, C, Reyaz, S, Ouacha, A, Rantakari, P , Vähä-Heikkilä, T , Varis, J & Rydberg, J 2012, Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits. in Proceedings of the 2012 International Semiconductor Conference, CAS 2012. IEEE Institute of Electrical and Electronic Engineers, pp. 217-220, 35th International Semiconductor Conference, CAS 2012, Sinaia, Romania, 15/11/12. https://doi.org/10.1109/SMICND.2012.6400650

Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits. / Malmqvist, R.; Jonsson, R.; Samuelsson, C. et al.
Proceedings of the 2012 International Semiconductor Conference, CAS 2012. IEEE Institute of Electrical and Electronic Engineers, 2012. p. 217-220.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits

AU - Malmqvist, R.

AU - Jonsson, R.

AU - Samuelsson, C.

AU - Reyaz, S.

AU - Ouacha, A.

AU - Rantakari, Pekka

AU - Vähä-Heikkilä, Tauno

AU - Varis, Jussi

AU - Rydberg, J.

N1 - Project code: 20392

PY - 2012

Y1 - 2012

N2 - This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin=24-31 dBm with Vbias=0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits

AB - This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin=24-31 dBm with Vbias=0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits

KW - Limiter

KW - radio frequency micro-electro-mechanical systems (RF MEMS)

KW - self-actuation

KW - switches

U2 - 10.1109/SMICND.2012.6400650

DO - 10.1109/SMICND.2012.6400650

M3 - Conference article in proceedings

SN - 978-1-4673-0737-6

SP - 217

EP - 220

BT - Proceedings of the 2012 International Semiconductor Conference, CAS 2012

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 35th International Semiconductor Conference, CAS 2012

Y2 - 15 November 2012 through 17 November 2012

ER -

Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits

Abstract

Conference

Keywords

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