Self-aligned doping profiles in nanoscale silicon structures

Jouni Ahopelto (Corresponding Author), Mika Prunnila, Eeva Pursula

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

We propose and demonstrate a method for self-aligning control of doping profiles in nanoscale silicon devices. The method is based on different segregation behaviour of n-type and p-type dopants during thermal oxidation. The simulations show that in nanowires with compensated impurity concentrations the type of conductivity can be changed from p-type to n-type. We use the method to realize a lateral field effect device in silicon showing pn-diode-like characteristics at 300 K.
Original languageEnglish
Pages (from-to)547-549
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume32
Issue number1-2
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed
Event12th International Conference on Modulated Semiconductor Structures - Albuquerque, United States
Duration: 10 Jul 200515 Jul 2005

Fingerprint

Silicon
Doping (additives)
silicon
profiles
Nanowires
Diodes
nanowires
diodes
Impurities
impurities
Oxidation
conductivity
oxidation
simulation
Hot Temperature

Keywords

  • segregation
  • semiconductor doping
  • semiconductors
  • diode
  • silicon on insulator
  • CMOS

Cite this

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title = "Self-aligned doping profiles in nanoscale silicon structures",
abstract = "We propose and demonstrate a method for self-aligning control of doping profiles in nanoscale silicon devices. The method is based on different segregation behaviour of n-type and p-type dopants during thermal oxidation. The simulations show that in nanowires with compensated impurity concentrations the type of conductivity can be changed from p-type to n-type. We use the method to realize a lateral field effect device in silicon showing pn-diode-like characteristics at 300 K.",
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Self-aligned doping profiles in nanoscale silicon structures. / Ahopelto, Jouni (Corresponding Author); Prunnila, Mika; Pursula, Eeva.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 32, No. 1-2, 2006, p. 547-549.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Self-aligned doping profiles in nanoscale silicon structures

AU - Ahopelto, Jouni

AU - Prunnila, Mika

AU - Pursula, Eeva

PY - 2006

Y1 - 2006

N2 - We propose and demonstrate a method for self-aligning control of doping profiles in nanoscale silicon devices. The method is based on different segregation behaviour of n-type and p-type dopants during thermal oxidation. The simulations show that in nanowires with compensated impurity concentrations the type of conductivity can be changed from p-type to n-type. We use the method to realize a lateral field effect device in silicon showing pn-diode-like characteristics at 300 K.

AB - We propose and demonstrate a method for self-aligning control of doping profiles in nanoscale silicon devices. The method is based on different segregation behaviour of n-type and p-type dopants during thermal oxidation. The simulations show that in nanowires with compensated impurity concentrations the type of conductivity can be changed from p-type to n-type. We use the method to realize a lateral field effect device in silicon showing pn-diode-like characteristics at 300 K.

KW - segregation

KW - semiconductor doping

KW - semiconductors

KW - diode

KW - silicon on insulator

KW - CMOS

U2 - 10.1016/j.physe.2005.12.148

DO - 10.1016/j.physe.2005.12.148

M3 - Article

VL - 32

SP - 547

EP - 549

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-2

ER -