Self-aligned doping profiles in nanoscale silicon structures

Jouni Ahopelto (Corresponding Author), Mika Prunnila, Eeva Pursula

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    We propose and demonstrate a method for self-aligning control of doping profiles in nanoscale silicon devices. The method is based on different segregation behaviour of n-type and p-type dopants during thermal oxidation. The simulations show that in nanowires with compensated impurity concentrations the type of conductivity can be changed from p-type to n-type. We use the method to realize a lateral field effect device in silicon showing pn-diode-like characteristics at 300 K.
    Original languageEnglish
    Pages (from-to)547-549
    Number of pages3
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume32
    Issue number1-2
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed
    Event12th International Conference on Modulated Semiconductor Structures, MSS12 - Albuquerque, United States
    Duration: 10 Jul 200515 Jul 2005

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    Keywords

    • segregation
    • semiconductor doping
    • semiconductors
    • diode
    • silicon on insulator
    • CMOS

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