Self-aligned doping profiles in nanoscale silicon structures

Jouni Ahopelto; Mika Prunnila; Eeva Pursula

doi:10.1016/j.physe.2005.12.148

Self-aligned doping profiles in nanoscale silicon structures

Jouni Ahopelto (Corresponding Author), Mika Prunnila, Eeva Pursula

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

We propose and demonstrate a method for self-aligning control of doping profiles in nanoscale silicon devices. The method is based on different segregation behaviour of n-type and p-type dopants during thermal oxidation. The simulations show that in nanowires with compensated impurity concentrations the type of conductivity can be changed from p-type to n-type. We use the method to realize a lateral field effect device in silicon showing pn-diode-like characteristics at 300 K.

Original language	English
Pages (from-to)	547-549
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	32
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physe.2005.12.148
Publication status	Published - 2006
MoE publication type	A1 Journal article-refereed
Event	12th International Conference on Modulated Semiconductor Structures, MSS12 - Albuquerque, United States Duration: 10 Jul 2005 → 15 Jul 2005

Keywords

segregation
semiconductor doping
semiconductors
diode
silicon on insulator
CMOS

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10.1016/j.physe.2005.12.148

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title = "Self-aligned doping profiles in nanoscale silicon structures",

abstract = "We propose and demonstrate a method for self-aligning control of doping profiles in nanoscale silicon devices. The method is based on different segregation behaviour of n-type and p-type dopants during thermal oxidation. The simulations show that in nanowires with compensated impurity concentrations the type of conductivity can be changed from p-type to n-type. We use the method to realize a lateral field effect device in silicon showing pn-diode-like characteristics at 300 K.",

keywords = "segregation, semiconductor doping, semiconductors, diode, silicon on insulator, CMOS",

author = "Jouni Ahopelto and Mika Prunnila and Eeva Pursula",

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journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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T1 - Self-aligned doping profiles in nanoscale silicon structures

AU - Ahopelto, Jouni

AU - Prunnila, Mika

AU - Pursula, Eeva

PY - 2006

Y1 - 2006

N2 - We propose and demonstrate a method for self-aligning control of doping profiles in nanoscale silicon devices. The method is based on different segregation behaviour of n-type and p-type dopants during thermal oxidation. The simulations show that in nanowires with compensated impurity concentrations the type of conductivity can be changed from p-type to n-type. We use the method to realize a lateral field effect device in silicon showing pn-diode-like characteristics at 300 K.

AB - We propose and demonstrate a method for self-aligning control of doping profiles in nanoscale silicon devices. The method is based on different segregation behaviour of n-type and p-type dopants during thermal oxidation. The simulations show that in nanowires with compensated impurity concentrations the type of conductivity can be changed from p-type to n-type. We use the method to realize a lateral field effect device in silicon showing pn-diode-like characteristics at 300 K.

KW - segregation

KW - semiconductor doping

KW - semiconductors

KW - diode

KW - silicon on insulator

KW - CMOS

U2 - 10.1016/j.physe.2005.12.148

DO - 10.1016/j.physe.2005.12.148

M3 - Article

SN - 1386-9477

VL - 32

SP - 547

EP - 549

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2

T2 - 12th International Conference on Modulated Semiconductor Structures, MSS12

Y2 - 10 July 2005 through 15 July 2005

ER -

Self-aligned doping profiles in nanoscale silicon structures

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Keywords

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