Self-aligned patterning method of poly(aniline) for organic field-effect transistor gate electrode

Salme Jussila (Corresponding Author), Maria Puustinen, Tomi Hassinen, Juuso Olkkonen, Henrik GO Sandberg, Kimmo Solehmainen

Research output: Contribution to journalArticleScientificpeer-review

16 Citations (Scopus)

Abstract

We present a new manufacturing method for the bottom-gate type organic field-effect transistor (OFET) having a self-aligned gate electrode based on conducting poly(aniline). This method utilizes the possibility to turn the insulating emeraldine base (PANI-EB) form of poly(aniline) into the conducting emeraldine salt (PANI-ES) form by using UV exposure and photoacid generator (PAG) material. When the source–drain electrodes are used as the mask layer in the UV exposure step an optimal alignment between the gate electrode and source–drain electrodes can be reached, and the parasitic capacitance of the transistor can be minimized. We anticipate that the proposed concept also simplifies the fabrication of the transistors since no additional processing of the photoresist layers is needed to pattern the gate electrode or the gate insulator layer.
Original languageEnglish
Pages (from-to)1308-1314
Number of pages7
JournalOrganic Electronics
Volume13
Issue number8
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

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Gates (transistor)
Organic field effect transistors
Aniline
aniline
field effect transistors
Electrodes
electrodes
Transistors
transistors
conduction
Photoresists
photoresists
Masks
Capacitance
masks
generators
manufacturing
Salts
capacitance
alignment

Cite this

Jussila, Salme ; Puustinen, Maria ; Hassinen, Tomi ; Olkkonen, Juuso ; Sandberg, Henrik GO ; Solehmainen, Kimmo. / Self-aligned patterning method of poly(aniline) for organic field-effect transistor gate electrode. In: Organic Electronics. 2012 ; Vol. 13, No. 8. pp. 1308-1314.
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title = "Self-aligned patterning method of poly(aniline) for organic field-effect transistor gate electrode",
abstract = "We present a new manufacturing method for the bottom-gate type organic field-effect transistor (OFET) having a self-aligned gate electrode based on conducting poly(aniline). This method utilizes the possibility to turn the insulating emeraldine base (PANI-EB) form of poly(aniline) into the conducting emeraldine salt (PANI-ES) form by using UV exposure and photoacid generator (PAG) material. When the source–drain electrodes are used as the mask layer in the UV exposure step an optimal alignment between the gate electrode and source–drain electrodes can be reached, and the parasitic capacitance of the transistor can be minimized. We anticipate that the proposed concept also simplifies the fabrication of the transistors since no additional processing of the photoresist layers is needed to pattern the gate electrode or the gate insulator layer.",
author = "Salme Jussila and Maria Puustinen and Tomi Hassinen and Juuso Olkkonen and Sandberg, {Henrik GO} and Kimmo Solehmainen",
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Self-aligned patterning method of poly(aniline) for organic field-effect transistor gate electrode. / Jussila, Salme (Corresponding Author); Puustinen, Maria; Hassinen, Tomi; Olkkonen, Juuso; Sandberg, Henrik GO; Solehmainen, Kimmo.

In: Organic Electronics, Vol. 13, No. 8, 2012, p. 1308-1314.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Self-aligned patterning method of poly(aniline) for organic field-effect transistor gate electrode

AU - Jussila, Salme

AU - Puustinen, Maria

AU - Hassinen, Tomi

AU - Olkkonen, Juuso

AU - Sandberg, Henrik GO

AU - Solehmainen, Kimmo

N1 - Project code: 36427 (EU-Polaric)

PY - 2012

Y1 - 2012

N2 - We present a new manufacturing method for the bottom-gate type organic field-effect transistor (OFET) having a self-aligned gate electrode based on conducting poly(aniline). This method utilizes the possibility to turn the insulating emeraldine base (PANI-EB) form of poly(aniline) into the conducting emeraldine salt (PANI-ES) form by using UV exposure and photoacid generator (PAG) material. When the source–drain electrodes are used as the mask layer in the UV exposure step an optimal alignment between the gate electrode and source–drain electrodes can be reached, and the parasitic capacitance of the transistor can be minimized. We anticipate that the proposed concept also simplifies the fabrication of the transistors since no additional processing of the photoresist layers is needed to pattern the gate electrode or the gate insulator layer.

AB - We present a new manufacturing method for the bottom-gate type organic field-effect transistor (OFET) having a self-aligned gate electrode based on conducting poly(aniline). This method utilizes the possibility to turn the insulating emeraldine base (PANI-EB) form of poly(aniline) into the conducting emeraldine salt (PANI-ES) form by using UV exposure and photoacid generator (PAG) material. When the source–drain electrodes are used as the mask layer in the UV exposure step an optimal alignment between the gate electrode and source–drain electrodes can be reached, and the parasitic capacitance of the transistor can be minimized. We anticipate that the proposed concept also simplifies the fabrication of the transistors since no additional processing of the photoresist layers is needed to pattern the gate electrode or the gate insulator layer.

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DO - 10.1016/j.orgel.2012.04.004

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VL - 13

SP - 1308

EP - 1314

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

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