Self-aligned patterning method of poly(aniline) for organic field-effect transistor gate electrode

Salme Jussila (Corresponding Author), Maria Puustinen, Tomi Hassinen, Juuso Olkkonen, Henrik GO Sandberg, Kimmo Solehmainen

    Research output: Contribution to journalArticleScientificpeer-review

    19 Citations (Scopus)


    We present a new manufacturing method for the bottom-gate type organic field-effect transistor (OFET) having a self-aligned gate electrode based on conducting poly(aniline). This method utilizes the possibility to turn the insulating emeraldine base (PANI-EB) form of poly(aniline) into the conducting emeraldine salt (PANI-ES) form by using UV exposure and photoacid generator (PAG) material. When the source–drain electrodes are used as the mask layer in the UV exposure step an optimal alignment between the gate electrode and source–drain electrodes can be reached, and the parasitic capacitance of the transistor can be minimized. We anticipate that the proposed concept also simplifies the fabrication of the transistors since no additional processing of the photoresist layers is needed to pattern the gate electrode or the gate insulator layer.
    Original languageEnglish
    Pages (from-to)1308-1314
    JournalOrganic Electronics
    Issue number8
    Publication statusPublished - 2012
    MoE publication typeA1 Journal article-refereed


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