Keyphrases
Gate Electrode
100%
Pattern-based Approach
100%
Polyaniline (PANi)
100%
Organic Field-effect Transistors
100%
Self-organized Patterns
100%
Transistor
50%
UV Exposure
50%
Optimal Alignment
25%
Bottom Gate
25%
Photoresist Layer
25%
Parasitic Capacitance
25%
Gate Insulator
25%
Salt Form
25%
Insulator Layer
25%
New Manufacturing Methods
25%
Self-aligned Top-gate
25%
Emeraldine Base
25%
Mask Layer
25%
Photoacid Generator
25%
Emeraldine Salt
25%
INIS
electrodes
100%
field effect transistors
100%
aniline
100%
layers
50%
transistors
33%
capacitance
16%
processing
16%
manufacturing
16%
salts
16%
fabrication
16%
alignment
16%
masks
16%
Engineering
Gate Electrode
100%
Organic Field Effect Transistors
100%
Patterning Method
100%
Simplifies
25%
Parasitic Capacitance
25%
Photoresist
25%
Material Science
Transistor
100%
Organic Field Effect Transistors
100%
Capacitance
50%