Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO2 thin films

Jussi Hiltunen, J. Puustinen, Aila Sitomaniemi, S. Pearce, M. Charlton, J. Lappalainen

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)


The possibility to use an ultra-fast laser operating at 1550 nm wavelength to induce intensity self-modulation in metal-insulator phase transition VO2 thin films was investigated. The results show that a self-modulation value upto 0.55 can be obtained by using z-scan method. In comparison, an externally triggered phase transition induced by heating the sample produced a modulation depth of 0.995 corresponding to almost complete light absorption. The results suggest that significant self-modulation can be produced by fs laser pulses, but the modulation strength is partially suppressed by incomplete transition from a transparent to an absorbing state and potentially time delay in the rise of absorbance.
Original languageEnglish
Article number121111
Number of pages5
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

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