Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO2 thin films

Jussi Hiltunen, J. Puustinen, Aila Sitomaniemi, S. Pearce, M. Charlton, J. Lappalainen

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

The possibility to use an ultra-fast laser operating at 1550 nm wavelength to induce intensity self-modulation in metal-insulator phase transition VO2 thin films was investigated. The results show that a self-modulation value upto 0.55 can be obtained by using z-scan method. In comparison, an externally triggered phase transition induced by heating the sample produced a modulation depth of 0.995 corresponding to almost complete light absorption. The results suggest that significant self-modulation can be produced by fs laser pulses, but the modulation strength is partially suppressed by incomplete transition from a transparent to an absorbing state and potentially time delay in the rise of absorbance.
Original languageEnglish
Article number121111
Number of pages5
JournalApplied Physics Letters
Volume102
Issue number12
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

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modulation
thin films
pulses
wavelengths
lasers
electromagnetic absorption
time lag
insulators
heating
metals

Cite this

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title = "Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO2 thin films",
abstract = "The possibility to use an ultra-fast laser operating at 1550 nm wavelength to induce intensity self-modulation in metal-insulator phase transition VO2 thin films was investigated. The results show that a self-modulation value upto 0.55 can be obtained by using z-scan method. In comparison, an externally triggered phase transition induced by heating the sample produced a modulation depth of 0.995 corresponding to almost complete light absorption. The results suggest that significant self-modulation can be produced by fs laser pulses, but the modulation strength is partially suppressed by incomplete transition from a transparent to an absorbing state and potentially time delay in the rise of absorbance.",
author = "Jussi Hiltunen and J. Puustinen and Aila Sitomaniemi and S. Pearce and M. Charlton and J. Lappalainen",
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journal = "Applied Physics Letters",
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Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO2 thin films. / Hiltunen, Jussi; Puustinen, J.; Sitomaniemi, Aila; Pearce, S.; Charlton, M.; Lappalainen, J.

In: Applied Physics Letters, Vol. 102, No. 12, 121111, 2013.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO2 thin films

AU - Hiltunen, Jussi

AU - Puustinen, J.

AU - Sitomaniemi, Aila

AU - Pearce, S.

AU - Charlton, M.

AU - Lappalainen, J.

PY - 2013

Y1 - 2013

N2 - The possibility to use an ultra-fast laser operating at 1550 nm wavelength to induce intensity self-modulation in metal-insulator phase transition VO2 thin films was investigated. The results show that a self-modulation value upto 0.55 can be obtained by using z-scan method. In comparison, an externally triggered phase transition induced by heating the sample produced a modulation depth of 0.995 corresponding to almost complete light absorption. The results suggest that significant self-modulation can be produced by fs laser pulses, but the modulation strength is partially suppressed by incomplete transition from a transparent to an absorbing state and potentially time delay in the rise of absorbance.

AB - The possibility to use an ultra-fast laser operating at 1550 nm wavelength to induce intensity self-modulation in metal-insulator phase transition VO2 thin films was investigated. The results show that a self-modulation value upto 0.55 can be obtained by using z-scan method. In comparison, an externally triggered phase transition induced by heating the sample produced a modulation depth of 0.995 corresponding to almost complete light absorption. The results suggest that significant self-modulation can be produced by fs laser pulses, but the modulation strength is partially suppressed by incomplete transition from a transparent to an absorbing state and potentially time delay in the rise of absorbance.

U2 - 10.1063/1.4798831

DO - 10.1063/1.4798831

M3 - Article

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 121111

ER -