Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO2 thin films

Jussi Hiltunen; Jarkko Puustinen; Aila Sitomaniemi; Stuart Pearce; Martin Charlton; Jyrki Lappalainen

doi:10.1063/1.4798831

Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO₂ thin films

Jussi Hiltunen, Jarkko Puustinen, Aila Sitomaniemi, Stuart Pearce, Martin Charlton, Jyrki Lappalainen

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

The possibility to use an ultra-fast laser operating at 1550 nm wavelength to induce intensity self-modulation in metal-insulator phase transition VO₂ thin films was investigated. The results show that a self-modulation value upto 0.55 can be obtained by using z-scan method. In comparison, an externally triggered phase transition induced by heating the sample produced a modulation depth of 0.995 corresponding to almost complete light absorption. The results suggest that significant self-modulation can be produced by fs laser pulses, but the modulation strength is partially suppressed by incomplete transition from a transparent to an absorbing state and potentially time delay in the rise of absorbance.

Original language	English
Article number	121111
Number of pages	5
Journal	Applied Physics Letters
Volume	102
Issue number	12
DOIs	https://doi.org/10.1063/1.4798831
Publication status	Published - 2013
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.4798831

Cite this

@article{bb07eb1819b242e38e6ef030cc1244f4,

title = "Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO2 thin films",

abstract = "The possibility to use an ultra-fast laser operating at 1550 nm wavelength to induce intensity self-modulation in metal-insulator phase transition VO2 thin films was investigated. The results show that a self-modulation value upto 0.55 can be obtained by using z-scan method. In comparison, an externally triggered phase transition induced by heating the sample produced a modulation depth of 0.995 corresponding to almost complete light absorption. The results suggest that significant self-modulation can be produced by fs laser pulses, but the modulation strength is partially suppressed by incomplete transition from a transparent to an absorbing state and potentially time delay in the rise of absorbance.",

author = "Jussi Hiltunen and Jarkko Puustinen and Aila Sitomaniemi and Stuart Pearce and Martin Charlton and Jyrki Lappalainen",

year = "2013",

doi = "10.1063/1.4798831",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "12",

}

TY - JOUR

T1 - Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO2 thin films

AU - Hiltunen, Jussi

AU - Puustinen, Jarkko

AU - Sitomaniemi, Aila

AU - Pearce, Stuart

AU - Charlton, Martin

AU - Lappalainen, Jyrki

PY - 2013

Y1 - 2013

N2 - The possibility to use an ultra-fast laser operating at 1550 nm wavelength to induce intensity self-modulation in metal-insulator phase transition VO2 thin films was investigated. The results show that a self-modulation value upto 0.55 can be obtained by using z-scan method. In comparison, an externally triggered phase transition induced by heating the sample produced a modulation depth of 0.995 corresponding to almost complete light absorption. The results suggest that significant self-modulation can be produced by fs laser pulses, but the modulation strength is partially suppressed by incomplete transition from a transparent to an absorbing state and potentially time delay in the rise of absorbance.

AB - The possibility to use an ultra-fast laser operating at 1550 nm wavelength to induce intensity self-modulation in metal-insulator phase transition VO2 thin films was investigated. The results show that a self-modulation value upto 0.55 can be obtained by using z-scan method. In comparison, an externally triggered phase transition induced by heating the sample produced a modulation depth of 0.995 corresponding to almost complete light absorption. The results suggest that significant self-modulation can be produced by fs laser pulses, but the modulation strength is partially suppressed by incomplete transition from a transparent to an absorbing state and potentially time delay in the rise of absorbance.

U2 - 10.1063/1.4798831

DO - 10.1063/1.4798831

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121111

ER -

Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO2 thin films

Abstract

Access to Document

Fingerprint

Cite this

Self-modulation of ultra-fast laser pulses with 1550 nm central wavelength in VO₂ thin films