Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

M. Taskinen, Markku Sopanen, Harri Lipsanen, J. Tulkki, T. Tuomi, Ahopelto Jouni

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The effects of growth temperature, InAs deposition thickness and deposition rate on the areal density, size, uniformity and spatial distribution of self-organized InAs nanoscale islands grown on exact and vicinal (100) InP substrates by metalorganic vapor-phase epitaxy are investigated in detail by AFM. At 500°C, the island density is found to increase as the InAs deposition thickness is increased, while the average island size decreases slightly. At growth temperatures above 500°C, larger inhomogenous islands also appear. Decreasing the deposition rate increases the island density and substrate coverage. The unintentional As/P exchange is found to have a significant influence on island formation by producing excess material for the islands. Low-temperature photoluminescence from the recombination of carriers in the buried InAs islands is observed in the 1.4 – 1.8 μm spectral region.

Original languageEnglish
Pages (from-to)60 - 68
Number of pages9
JournalSurface Science
Volume376
Issue number1-3
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

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Metallorganic vapor phase epitaxy
Growth temperature
Deposition rates
vapor phase epitaxy
Substrates
Spatial distribution
Photoluminescence
Temperature
indium arsenide
density distribution
spatial distribution
atomic force microscopy
photoluminescence
temperature

Cite this

Taskinen, M., Sopanen, M., Lipsanen, H., Tulkki, J., Tuomi, T., & Jouni, A. (1997). Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy. Surface Science, 376(1-3), 60 - 68. https://doi.org/10.1016/S0039-6028(96)01597-X
Taskinen, M. ; Sopanen, Markku ; Lipsanen, Harri ; Tulkki, J. ; Tuomi, T. ; Jouni, Ahopelto. / Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy. In: Surface Science. 1997 ; Vol. 376, No. 1-3. pp. 60 - 68.
@article{2d61f24b508e405c8e6ac49efbe668d4,
title = "Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy",
abstract = "The effects of growth temperature, InAs deposition thickness and deposition rate on the areal density, size, uniformity and spatial distribution of self-organized InAs nanoscale islands grown on exact and vicinal (100) InP substrates by metalorganic vapor-phase epitaxy are investigated in detail by AFM. At 500°C, the island density is found to increase as the InAs deposition thickness is increased, while the average island size decreases slightly. At growth temperatures above 500°C, larger inhomogenous islands also appear. Decreasing the deposition rate increases the island density and substrate coverage. The unintentional As/P exchange is found to have a significant influence on island formation by producing excess material for the islands. Low-temperature photoluminescence from the recombination of carriers in the buried InAs islands is observed in the 1.4 – 1.8 μm spectral region.",
author = "M. Taskinen and Markku Sopanen and Harri Lipsanen and J. Tulkki and T. Tuomi and Ahopelto Jouni",
year = "1997",
doi = "10.1016/S0039-6028(96)01597-X",
language = "English",
volume = "376",
pages = "60 -- 68",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-3",

}

Taskinen, M, Sopanen, M, Lipsanen, H, Tulkki, J, Tuomi, T & Jouni, A 1997, 'Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy', Surface Science, vol. 376, no. 1-3, pp. 60 - 68. https://doi.org/10.1016/S0039-6028(96)01597-X

Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy. / Taskinen, M.; Sopanen, Markku; Lipsanen, Harri; Tulkki, J.; Tuomi, T.; Jouni, Ahopelto.

In: Surface Science, Vol. 376, No. 1-3, 1997, p. 60 - 68.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

AU - Taskinen, M.

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Tulkki, J.

AU - Tuomi, T.

AU - Jouni, Ahopelto

PY - 1997

Y1 - 1997

N2 - The effects of growth temperature, InAs deposition thickness and deposition rate on the areal density, size, uniformity and spatial distribution of self-organized InAs nanoscale islands grown on exact and vicinal (100) InP substrates by metalorganic vapor-phase epitaxy are investigated in detail by AFM. At 500°C, the island density is found to increase as the InAs deposition thickness is increased, while the average island size decreases slightly. At growth temperatures above 500°C, larger inhomogenous islands also appear. Decreasing the deposition rate increases the island density and substrate coverage. The unintentional As/P exchange is found to have a significant influence on island formation by producing excess material for the islands. Low-temperature photoluminescence from the recombination of carriers in the buried InAs islands is observed in the 1.4 – 1.8 μm spectral region.

AB - The effects of growth temperature, InAs deposition thickness and deposition rate on the areal density, size, uniformity and spatial distribution of self-organized InAs nanoscale islands grown on exact and vicinal (100) InP substrates by metalorganic vapor-phase epitaxy are investigated in detail by AFM. At 500°C, the island density is found to increase as the InAs deposition thickness is increased, while the average island size decreases slightly. At growth temperatures above 500°C, larger inhomogenous islands also appear. Decreasing the deposition rate increases the island density and substrate coverage. The unintentional As/P exchange is found to have a significant influence on island formation by producing excess material for the islands. Low-temperature photoluminescence from the recombination of carriers in the buried InAs islands is observed in the 1.4 – 1.8 μm spectral region.

U2 - 10.1016/S0039-6028(96)01597-X

DO - 10.1016/S0039-6028(96)01597-X

M3 - Article

VL - 376

SP - 60

EP - 68

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -