Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy

Markku Sopanen, Harri Lipsanen, Jouni Ahopelto

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    Abstract

    The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated.
    The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed.
    The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature.
    Original languageEnglish
    Article number3768
    JournalApplied Physics Letters
    Volume67
    Issue number25
    DOIs
    Publication statusPublished - 1995
    MoE publication typeA1 Journal article-refereed

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    vapor phase epitaxy
    temperature
    misalignment
    set theory

    Cite this

    @article{7328bf3f21f3455a89a23ce7842978d6,
    title = "Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy",
    abstract = "The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated. The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed. The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature.",
    author = "Markku Sopanen and Harri Lipsanen and Jouni Ahopelto",
    note = "Project code: E5SU00093",
    year = "1995",
    doi = "10.1063/1.115377",
    language = "English",
    volume = "67",
    journal = "Applied Physics Letters",
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    Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy. / Sopanen, Markku; Lipsanen, Harri; Ahopelto, Jouni.

    In: Applied Physics Letters, Vol. 67, No. 25, 3768, 1995.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy

    AU - Sopanen, Markku

    AU - Lipsanen, Harri

    AU - Ahopelto, Jouni

    N1 - Project code: E5SU00093

    PY - 1995

    Y1 - 1995

    N2 - The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated. The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed. The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature.

    AB - The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated. The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed. The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature.

    U2 - 10.1063/1.115377

    DO - 10.1063/1.115377

    M3 - Article

    VL - 67

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 25

    M1 - 3768

    ER -