Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy

Markku Sopanen, Harri Lipsanen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

70 Citations (Scopus)

Abstract

The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated.
The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed.
The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature.
Original languageEnglish
Article number3768
JournalApplied Physics Letters
Volume67
Issue number25
DOIs
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

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vapor phase epitaxy
temperature
misalignment
set theory

Cite this

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title = "Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy",
abstract = "The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated. The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed. The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature.",
author = "Markku Sopanen and Harri Lipsanen and Jouni Ahopelto",
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Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy. / Sopanen, Markku; Lipsanen, Harri; Ahopelto, Jouni.

In: Applied Physics Letters, Vol. 67, No. 25, 3768, 1995.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Ahopelto, Jouni

N1 - Project code: E5SU00093

PY - 1995

Y1 - 1995

N2 - The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated. The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed. The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature.

AB - The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated. The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed. The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature.

U2 - 10.1063/1.115377

DO - 10.1063/1.115377

M3 - Article

VL - 67

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 3768

ER -