SEM and AFM analysis of light point defects

Simo Eränen, T. Vehmas, Unto Tapper, T. Tamminen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    The paper describes methods of the microscopic analyses on the light point defects (LPD), which are usually counted with the optical wafer inspection systems. Special attention is paid on the observations of the LPD's originating from the actual IC process steps. Then the LPD count per wafer can be very low e.g. after an efficient cleaning step. The localization of the LM of the interest is realized through the litographic fabrication of small dot marks, which enable the navigation on the bare substrate surfaces. The marks are fabricated using light field patterns, when the marked wafers are suitable for the studies on the manufacturing processes. On the other hand the marks fabricated with the dark field pattern can be be used for the studies of the IC fabrication processes. Examples on the LP13 distributions on the wafer, SEM/EDX spectra of the LPD's and COP studies with the AFM are presented. Finally, the possibilities of the adhesion studies of the particles are shortly discussed.
    Original languageEnglish
    Title of host publication30th R3-Nordic Contamination Control Symposium
    Place of PublicationEspoo
    PublisherVTT Technical Research Centre of Finland
    Pages439-441
    ISBN (Print)951-38-5268-7
    Publication statusPublished - 1999
    MoE publication typeA4 Article in a conference publication
    Event30th R3-Nordic Contamination Control Symposium
    - Helsinki, Finland
    Duration: 30 May 19992 Jun 1999

    Publication series

    SeriesVTT Symposium
    Number193
    ISSN0357-9387

    Conference

    Conference30th R3-Nordic Contamination Control Symposium
    CountryFinland
    CityHelsinki
    Period30/05/992/06/99

    Fingerprint

    point defects
    atomic force microscopy
    wafers
    scanning electron microscopy
    fabrication
    navigation
    cleaning
    inspection
    adhesion
    manufacturing

    Cite this

    Eränen, S., Vehmas, T., Tapper, U., & Tamminen, T. (1999). SEM and AFM analysis of light point defects. In 30th R3-Nordic Contamination Control Symposium (pp. 439-441). Espoo: VTT Technical Research Centre of Finland. VTT Symposium, No. 193
    Eränen, Simo ; Vehmas, T. ; Tapper, Unto ; Tamminen, T. / SEM and AFM analysis of light point defects. 30th R3-Nordic Contamination Control Symposium. Espoo : VTT Technical Research Centre of Finland, 1999. pp. 439-441 (VTT Symposium; No. 193).
    @inproceedings{8b6f76839e274dec81459641b871059a,
    title = "SEM and AFM analysis of light point defects",
    abstract = "The paper describes methods of the microscopic analyses on the light point defects (LPD), which are usually counted with the optical wafer inspection systems. Special attention is paid on the observations of the LPD's originating from the actual IC process steps. Then the LPD count per wafer can be very low e.g. after an efficient cleaning step. The localization of the LM of the interest is realized through the litographic fabrication of small dot marks, which enable the navigation on the bare substrate surfaces. The marks are fabricated using light field patterns, when the marked wafers are suitable for the studies on the manufacturing processes. On the other hand the marks fabricated with the dark field pattern can be be used for the studies of the IC fabrication processes. Examples on the LP13 distributions on the wafer, SEM/EDX spectra of the LPD's and COP studies with the AFM are presented. Finally, the possibilities of the adhesion studies of the particles are shortly discussed.",
    author = "Simo Er{\"a}nen and T. Vehmas and Unto Tapper and T. Tamminen",
    year = "1999",
    language = "English",
    isbn = "951-38-5268-7",
    series = "VTT Symposium",
    publisher = "VTT Technical Research Centre of Finland",
    number = "193",
    pages = "439--441",
    booktitle = "30th R3-Nordic Contamination Control Symposium",
    address = "Finland",

    }

    Eränen, S, Vehmas, T, Tapper, U & Tamminen, T 1999, SEM and AFM analysis of light point defects. in 30th R3-Nordic Contamination Control Symposium. VTT Technical Research Centre of Finland, Espoo, VTT Symposium, no. 193, pp. 439-441, 30th R3-Nordic Contamination Control Symposium
    , Helsinki, Finland, 30/05/99.

    SEM and AFM analysis of light point defects. / Eränen, Simo; Vehmas, T.; Tapper, Unto; Tamminen, T.

    30th R3-Nordic Contamination Control Symposium. Espoo : VTT Technical Research Centre of Finland, 1999. p. 439-441 (VTT Symposium; No. 193).

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - SEM and AFM analysis of light point defects

    AU - Eränen, Simo

    AU - Vehmas, T.

    AU - Tapper, Unto

    AU - Tamminen, T.

    PY - 1999

    Y1 - 1999

    N2 - The paper describes methods of the microscopic analyses on the light point defects (LPD), which are usually counted with the optical wafer inspection systems. Special attention is paid on the observations of the LPD's originating from the actual IC process steps. Then the LPD count per wafer can be very low e.g. after an efficient cleaning step. The localization of the LM of the interest is realized through the litographic fabrication of small dot marks, which enable the navigation on the bare substrate surfaces. The marks are fabricated using light field patterns, when the marked wafers are suitable for the studies on the manufacturing processes. On the other hand the marks fabricated with the dark field pattern can be be used for the studies of the IC fabrication processes. Examples on the LP13 distributions on the wafer, SEM/EDX spectra of the LPD's and COP studies with the AFM are presented. Finally, the possibilities of the adhesion studies of the particles are shortly discussed.

    AB - The paper describes methods of the microscopic analyses on the light point defects (LPD), which are usually counted with the optical wafer inspection systems. Special attention is paid on the observations of the LPD's originating from the actual IC process steps. Then the LPD count per wafer can be very low e.g. after an efficient cleaning step. The localization of the LM of the interest is realized through the litographic fabrication of small dot marks, which enable the navigation on the bare substrate surfaces. The marks are fabricated using light field patterns, when the marked wafers are suitable for the studies on the manufacturing processes. On the other hand the marks fabricated with the dark field pattern can be be used for the studies of the IC fabrication processes. Examples on the LP13 distributions on the wafer, SEM/EDX spectra of the LPD's and COP studies with the AFM are presented. Finally, the possibilities of the adhesion studies of the particles are shortly discussed.

    M3 - Conference article in proceedings

    SN - 951-38-5268-7

    T3 - VTT Symposium

    SP - 439

    EP - 441

    BT - 30th R3-Nordic Contamination Control Symposium

    PB - VTT Technical Research Centre of Finland

    CY - Espoo

    ER -

    Eränen S, Vehmas T, Tapper U, Tamminen T. SEM and AFM analysis of light point defects. In 30th R3-Nordic Contamination Control Symposium. Espoo: VTT Technical Research Centre of Finland. 1999. p. 439-441. (VTT Symposium; No. 193).