SEM and AFM analysis of light point defects

Simo Eränen, T. Vehmas, Unto Tapper, T. Tamminen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

The paper describes methods of the microscopic analyses on the light point defects (LPD), which are usually counted with the optical wafer inspection systems. Special attention is paid on the observations of the LPD's originating from the actual IC process steps. Then the LPD count per wafer can be very low e.g. after an efficient cleaning step. The localization of the LM of the interest is realized through the litographic fabrication of small dot marks, which enable the navigation on the bare substrate surfaces. The marks are fabricated using light field patterns, when the marked wafers are suitable for the studies on the manufacturing processes. On the other hand the marks fabricated with the dark field pattern can be be used for the studies of the IC fabrication processes. Examples on the LP13 distributions on the wafer, SEM/EDX spectra of the LPD's and COP studies with the AFM are presented. Finally, the possibilities of the adhesion studies of the particles are shortly discussed.
Original languageEnglish
Title of host publication30th R3-Nordic Contamination Control Symposium
Place of PublicationEspoo
PublisherVTT Technical Research Centre of Finland
Pages439-441
ISBN (Print)951-38-5268-7
Publication statusPublished - 1999
MoE publication typeA4 Article in a conference publication
Event30th R3-Nordic Contamination Control Symposium
- Helsinki, Finland
Duration: 30 May 19992 Jun 1999

Publication series

NameVTT Symposium
PublisherVTT
Number193
ISSN (Print)0357-9387
ISSN (Electronic)1455-0873

Conference

Conference30th R3-Nordic Contamination Control Symposium
CountryFinland
CityHelsinki
Period30/05/992/06/99

Fingerprint

point defects
atomic force microscopy
wafers
scanning electron microscopy
fabrication
navigation
cleaning
inspection
adhesion
manufacturing

Cite this

Eränen, S., Vehmas, T., Tapper, U., & Tamminen, T. (1999). SEM and AFM analysis of light point defects. In 30th R3-Nordic Contamination Control Symposium (pp. 439-441). Espoo: VTT Technical Research Centre of Finland. VTT Symposium, No. 193
Eränen, Simo ; Vehmas, T. ; Tapper, Unto ; Tamminen, T. / SEM and AFM analysis of light point defects. 30th R3-Nordic Contamination Control Symposium. Espoo : VTT Technical Research Centre of Finland, 1999. pp. 439-441 (VTT Symposium; No. 193).
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title = "SEM and AFM analysis of light point defects",
abstract = "The paper describes methods of the microscopic analyses on the light point defects (LPD), which are usually counted with the optical wafer inspection systems. Special attention is paid on the observations of the LPD's originating from the actual IC process steps. Then the LPD count per wafer can be very low e.g. after an efficient cleaning step. The localization of the LM of the interest is realized through the litographic fabrication of small dot marks, which enable the navigation on the bare substrate surfaces. The marks are fabricated using light field patterns, when the marked wafers are suitable for the studies on the manufacturing processes. On the other hand the marks fabricated with the dark field pattern can be be used for the studies of the IC fabrication processes. Examples on the LP13 distributions on the wafer, SEM/EDX spectra of the LPD's and COP studies with the AFM are presented. Finally, the possibilities of the adhesion studies of the particles are shortly discussed.",
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Eränen, S, Vehmas, T, Tapper, U & Tamminen, T 1999, SEM and AFM analysis of light point defects. in 30th R3-Nordic Contamination Control Symposium. VTT Technical Research Centre of Finland, Espoo, VTT Symposium, no. 193, pp. 439-441, 30th R3-Nordic Contamination Control Symposium
, Helsinki, Finland, 30/05/99.

SEM and AFM analysis of light point defects. / Eränen, Simo; Vehmas, T.; Tapper, Unto; Tamminen, T.

30th R3-Nordic Contamination Control Symposium. Espoo : VTT Technical Research Centre of Finland, 1999. p. 439-441 (VTT Symposium; No. 193).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - SEM and AFM analysis of light point defects

AU - Eränen, Simo

AU - Vehmas, T.

AU - Tapper, Unto

AU - Tamminen, T.

PY - 1999

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N2 - The paper describes methods of the microscopic analyses on the light point defects (LPD), which are usually counted with the optical wafer inspection systems. Special attention is paid on the observations of the LPD's originating from the actual IC process steps. Then the LPD count per wafer can be very low e.g. after an efficient cleaning step. The localization of the LM of the interest is realized through the litographic fabrication of small dot marks, which enable the navigation on the bare substrate surfaces. The marks are fabricated using light field patterns, when the marked wafers are suitable for the studies on the manufacturing processes. On the other hand the marks fabricated with the dark field pattern can be be used for the studies of the IC fabrication processes. Examples on the LP13 distributions on the wafer, SEM/EDX spectra of the LPD's and COP studies with the AFM are presented. Finally, the possibilities of the adhesion studies of the particles are shortly discussed.

AB - The paper describes methods of the microscopic analyses on the light point defects (LPD), which are usually counted with the optical wafer inspection systems. Special attention is paid on the observations of the LPD's originating from the actual IC process steps. Then the LPD count per wafer can be very low e.g. after an efficient cleaning step. The localization of the LM of the interest is realized through the litographic fabrication of small dot marks, which enable the navigation on the bare substrate surfaces. The marks are fabricated using light field patterns, when the marked wafers are suitable for the studies on the manufacturing processes. On the other hand the marks fabricated with the dark field pattern can be be used for the studies of the IC fabrication processes. Examples on the LP13 distributions on the wafer, SEM/EDX spectra of the LPD's and COP studies with the AFM are presented. Finally, the possibilities of the adhesion studies of the particles are shortly discussed.

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BT - 30th R3-Nordic Contamination Control Symposium

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Eränen S, Vehmas T, Tapper U, Tamminen T. SEM and AFM analysis of light point defects. In 30th R3-Nordic Contamination Control Symposium. Espoo: VTT Technical Research Centre of Finland. 1999. p. 439-441. (VTT Symposium; No. 193).