Semiconductor apparatus

Heikki Viljanen (Inventor), Pekka Rantakari (Inventor), Tauno Vähä-Heikkilä (Inventor), Esa Tuovinen (Inventor)

Research output: PatentPatent


A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.

Patent family as of 30.12.2021
CN110870067 A 20200306 CN201880045559 20180528      
EP3631855 A1 20200408 EP20180732132 20180528      
JP2020522135 T2 20200727 JP20190565170T 20180528      
JP6974502 B2 20211201 JP20190565170T 20180528      
KR20200014811 A 20200211 KR20197038311 20180528      
US2020152537 AA 20200514 US20180617307 20180528      
WO18220275 A1 20181206 WO2018FI50404 20180528

Link to current patent family on right 

Original languageEnglish
Patent numberUS2020152537
IPCH01L 49/ 02 A I
Priority date28/05/18
Publication statusPublished - 14 May 2020
MoE publication typeH1 Granted patent


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