Sensitivity optimization of epitaxial graphene-based gas sensors

Sergey Novikov, Alexandre Satrapinski, Natalia Lebedeva, Ilkka Iisakka

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

Epitaxial 4H-SiC graphene films for use in ambient gas sensing are fabricated and tested. The sensitivity response to nitrogen dioxide is optimized by varying both operation temperatures and humidity. A relative resistance change response of -45% is obtained upon application of elevated temperatures and a gas mixture containing NO2 at a concentration of 10 parts per billion (10 ppb). The sensitivity response increased linearly with NO2 concentration, reaching -60% at a concentration of 250 ppb, followed by saturation at 1 part per million (ppm) level.
Original languageEnglish
Pages (from-to)1859-1864
Number of pages5
JournalIEEE Transactions on Instrumentation and Measurement
Volume62
Issue number6
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Fingerprint

Chemical sensors
Graphene
graphene
optimization
sensitivity
sensors
gases
Gas mixtures
Atmospheric humidity
nitrogen dioxide
Nitrogen
Temperature
gas mixtures
humidity
Gases
saturation
temperature

Keywords

  • epitaxial graphene
  • gas sensors
  • graphene fabrication
  • measurement techniques
  • sensitivity measurements

Cite this

Novikov, Sergey ; Satrapinski, Alexandre ; Lebedeva, Natalia ; Iisakka, Ilkka. / Sensitivity optimization of epitaxial graphene-based gas sensors. In: IEEE Transactions on Instrumentation and Measurement. 2013 ; Vol. 62, No. 6. pp. 1859-1864.
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Sensitivity optimization of epitaxial graphene-based gas sensors. / Novikov, Sergey; Satrapinski, Alexandre; Lebedeva, Natalia; Iisakka, Ilkka.

In: IEEE Transactions on Instrumentation and Measurement, Vol. 62, No. 6, 2013, p. 1859-1864.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Sensitivity optimization of epitaxial graphene-based gas sensors

AU - Novikov, Sergey

AU - Satrapinski, Alexandre

AU - Lebedeva, Natalia

AU - Iisakka, Ilkka

PY - 2013

Y1 - 2013

N2 - Epitaxial 4H-SiC graphene films for use in ambient gas sensing are fabricated and tested. The sensitivity response to nitrogen dioxide is optimized by varying both operation temperatures and humidity. A relative resistance change response of -45% is obtained upon application of elevated temperatures and a gas mixture containing NO2 at a concentration of 10 parts per billion (10 ppb). The sensitivity response increased linearly with NO2 concentration, reaching -60% at a concentration of 250 ppb, followed by saturation at 1 part per million (ppm) level.

AB - Epitaxial 4H-SiC graphene films for use in ambient gas sensing are fabricated and tested. The sensitivity response to nitrogen dioxide is optimized by varying both operation temperatures and humidity. A relative resistance change response of -45% is obtained upon application of elevated temperatures and a gas mixture containing NO2 at a concentration of 10 parts per billion (10 ppb). The sensitivity response increased linearly with NO2 concentration, reaching -60% at a concentration of 250 ppb, followed by saturation at 1 part per million (ppm) level.

KW - epitaxial graphene

KW - gas sensors

KW - graphene fabrication

KW - measurement techniques

KW - sensitivity measurements

U2 - 10.1109/TIM.2013.2253913

DO - 10.1109/TIM.2013.2253913

M3 - Article

VL - 62

SP - 1859

EP - 1864

JO - IEEE Transactions on Instrumentation and Measurement

JF - IEEE Transactions on Instrumentation and Measurement

SN - 0018-9456

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ER -