Abstract
Epitaxial 4H-SiC graphene films for use in ambient gas sensing are fabricated and tested. The sensitivity response to nitrogen dioxide is optimized by varying both operation temperatures and humidity. A relative resistance change response of -45% is obtained upon application of elevated temperatures and a gas mixture containing NO2 at a concentration of 10 parts per billion (10 ppb). The sensitivity response increased linearly with NO2 concentration, reaching -60% at a concentration of 250 ppb, followed by saturation at 1 part per million (ppm) level.
Original language | English |
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Pages (from-to) | 1859-1864 |
Journal | IEEE Transactions on Instrumentation and Measurement |
Volume | 62 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2013 |
MoE publication type | A1 Journal article-refereed |
Keywords
- epitaxial graphene
- gas sensors
- graphene fabrication
- measurement techniques
- sensitivity measurements