Abstract
Photon-enhanced thermionic emission (PETE) solar cells
are photovoltaic devices designed for high temperature
operation. The use of Si, GaAs, and InP as the cathode
(i.e. the absorber and electron-emitter electrode)
materials in PETE solar cells is investigated with
numerical device models. The models describe the cathode
one dimensionally and are valid also at high injection
levels. The temperature dependence of the photon
absorption coefficients and temperature and doping
dependencies of electron mobilities are modelled.
Simulated device characteristics are presented and the
factors determining the efficiency of the PETE devices
are discussed. Our results show that Si, GaAs, and InP
are all promising materials for PETE solar cells, if the
surface recombination, effective electron affinities, and
thermal stability of these materials can be optimized.
Owing to their strong absorption, GaAs and InP show
higher efficiencies (20-25%) than Si (10-15%) in spite of
their intense radiative recombination. Especially, InP is
a promising candidate for PETE cathodes as it shows
higher efficiency than GaAs due to its stronger photon
absorption properties.
| Original language | English |
|---|---|
| Pages (from-to) | 351-358 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 134 |
| DOIs | |
| Publication status | Published - 2015 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- solar energy
- photon-enhanced thermionic emission
- device model
- silicon
- gallium arsenide
- indium phosphide
