Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells

    Research output: Contribution to journalArticleScientificpeer-review

    18 Citations (Scopus)

    Abstract

    Photon-enhanced thermionic emission (PETE) solar cells are photovoltaic devices designed for high temperature operation. The use of Si, GaAs, and InP as the cathode (i.e. the absorber and electron-emitter electrode) materials in PETE solar cells is investigated with numerical device models. The models describe the cathode one dimensionally and are valid also at high injection levels. The temperature dependence of the photon absorption coefficients and temperature and doping dependencies of electron mobilities are modelled. Simulated device characteristics are presented and the factors determining the efficiency of the PETE devices are discussed. Our results show that Si, GaAs, and InP are all promising materials for PETE solar cells, if the surface recombination, effective electron affinities, and thermal stability of these materials can be optimized. Owing to their strong absorption, GaAs and InP show higher efficiencies (20-25%) than Si (10-15%) in spite of their intense radiative recombination. Especially, InP is a promising candidate for PETE cathodes as it shows higher efficiency than GaAs due to its stronger photon absorption properties.
    Original languageEnglish
    Pages (from-to)351-358
    JournalSolar Energy Materials and Solar Cells
    Volume134
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Thermionic emission
    Solar cells
    Cathodes
    Photons
    High temperature operations
    Electron affinity
    Electron mobility
    gallium arsenide
    Thermodynamic stability
    Doping (additives)
    Temperature
    Electrodes
    Electrons

    Keywords

    • solar energy
    • photon-enhanced thermionic emission
    • device model
    • silicon
    • gallium arsenide
    • indium phosphide

    Cite this

    @article{255e0f0ca81c4c7f8f526cecc5e73a20,
    title = "Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells",
    abstract = "Photon-enhanced thermionic emission (PETE) solar cells are photovoltaic devices designed for high temperature operation. The use of Si, GaAs, and InP as the cathode (i.e. the absorber and electron-emitter electrode) materials in PETE solar cells is investigated with numerical device models. The models describe the cathode one dimensionally and are valid also at high injection levels. The temperature dependence of the photon absorption coefficients and temperature and doping dependencies of electron mobilities are modelled. Simulated device characteristics are presented and the factors determining the efficiency of the PETE devices are discussed. Our results show that Si, GaAs, and InP are all promising materials for PETE solar cells, if the surface recombination, effective electron affinities, and thermal stability of these materials can be optimized. Owing to their strong absorption, GaAs and InP show higher efficiencies (20-25{\%}) than Si (10-15{\%}) in spite of their intense radiative recombination. Especially, InP is a promising candidate for PETE cathodes as it shows higher efficiency than GaAs due to its stronger photon absorption properties.",
    keywords = "solar energy, photon-enhanced thermionic emission, device model, silicon, gallium arsenide, indium phosphide",
    author = "Aapo Varpula and Kirsi Tappura and Mika Prunnila",
    note = "Project code: 74074",
    year = "2015",
    doi = "10.1016/j.solmat.2014.12.021",
    language = "English",
    volume = "134",
    pages = "351--358",
    journal = "Solar Energy Materials and Solar Cells",
    issn = "0927-0248",
    publisher = "Elsevier",

    }

    Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells. / Varpula, Aapo; Tappura, Kirsi; Prunnila, Mika.

    In: Solar Energy Materials and Solar Cells, Vol. 134, 2015, p. 351-358.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells

    AU - Varpula, Aapo

    AU - Tappura, Kirsi

    AU - Prunnila, Mika

    N1 - Project code: 74074

    PY - 2015

    Y1 - 2015

    N2 - Photon-enhanced thermionic emission (PETE) solar cells are photovoltaic devices designed for high temperature operation. The use of Si, GaAs, and InP as the cathode (i.e. the absorber and electron-emitter electrode) materials in PETE solar cells is investigated with numerical device models. The models describe the cathode one dimensionally and are valid also at high injection levels. The temperature dependence of the photon absorption coefficients and temperature and doping dependencies of electron mobilities are modelled. Simulated device characteristics are presented and the factors determining the efficiency of the PETE devices are discussed. Our results show that Si, GaAs, and InP are all promising materials for PETE solar cells, if the surface recombination, effective electron affinities, and thermal stability of these materials can be optimized. Owing to their strong absorption, GaAs and InP show higher efficiencies (20-25%) than Si (10-15%) in spite of their intense radiative recombination. Especially, InP is a promising candidate for PETE cathodes as it shows higher efficiency than GaAs due to its stronger photon absorption properties.

    AB - Photon-enhanced thermionic emission (PETE) solar cells are photovoltaic devices designed for high temperature operation. The use of Si, GaAs, and InP as the cathode (i.e. the absorber and electron-emitter electrode) materials in PETE solar cells is investigated with numerical device models. The models describe the cathode one dimensionally and are valid also at high injection levels. The temperature dependence of the photon absorption coefficients and temperature and doping dependencies of electron mobilities are modelled. Simulated device characteristics are presented and the factors determining the efficiency of the PETE devices are discussed. Our results show that Si, GaAs, and InP are all promising materials for PETE solar cells, if the surface recombination, effective electron affinities, and thermal stability of these materials can be optimized. Owing to their strong absorption, GaAs and InP show higher efficiencies (20-25%) than Si (10-15%) in spite of their intense radiative recombination. Especially, InP is a promising candidate for PETE cathodes as it shows higher efficiency than GaAs due to its stronger photon absorption properties.

    KW - solar energy

    KW - photon-enhanced thermionic emission

    KW - device model

    KW - silicon

    KW - gallium arsenide

    KW - indium phosphide

    U2 - 10.1016/j.solmat.2014.12.021

    DO - 10.1016/j.solmat.2014.12.021

    M3 - Article

    VL - 134

    SP - 351

    EP - 358

    JO - Solar Energy Materials and Solar Cells

    JF - Solar Energy Materials and Solar Cells

    SN - 0927-0248

    ER -