Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)

Abstract

Photon-enhanced thermionic emission (PETE) solar cells are photovoltaic devices designed for high temperature operation. The use of Si, GaAs, and InP as the cathode (i.e. the absorber and electron-emitter electrode) materials in PETE solar cells is investigated with numerical device models. The models describe the cathode one dimensionally and are valid also at high injection levels. The temperature dependence of the photon absorption coefficients and temperature and doping dependencies of electron mobilities are modelled. Simulated device characteristics are presented and the factors determining the efficiency of the PETE devices are discussed. Our results show that Si, GaAs, and InP are all promising materials for PETE solar cells, if the surface recombination, effective electron affinities, and thermal stability of these materials can be optimized. Owing to their strong absorption, GaAs and InP show higher efficiencies (20-25%) than Si (10-15%) in spite of their intense radiative recombination. Especially, InP is a promising candidate for PETE cathodes as it shows higher efficiency than GaAs due to its stronger photon absorption properties.
Original languageEnglish
Pages (from-to)351-358
JournalSolar Energy Materials and Solar Cells
Volume134
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Fingerprint

Thermionic emission
Solar cells
Cathodes
Photons
High temperature operations
Electron affinity
Electron mobility
gallium arsenide
Thermodynamic stability
Doping (additives)
Temperature
Electrodes
Electrons

Keywords

  • solar energy
  • photon-enhanced thermionic emission
  • device model
  • silicon
  • gallium arsenide
  • indium phosphide

Cite this

@article{255e0f0ca81c4c7f8f526cecc5e73a20,
title = "Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells",
abstract = "Photon-enhanced thermionic emission (PETE) solar cells are photovoltaic devices designed for high temperature operation. The use of Si, GaAs, and InP as the cathode (i.e. the absorber and electron-emitter electrode) materials in PETE solar cells is investigated with numerical device models. The models describe the cathode one dimensionally and are valid also at high injection levels. The temperature dependence of the photon absorption coefficients and temperature and doping dependencies of electron mobilities are modelled. Simulated device characteristics are presented and the factors determining the efficiency of the PETE devices are discussed. Our results show that Si, GaAs, and InP are all promising materials for PETE solar cells, if the surface recombination, effective electron affinities, and thermal stability of these materials can be optimized. Owing to their strong absorption, GaAs and InP show higher efficiencies (20-25{\%}) than Si (10-15{\%}) in spite of their intense radiative recombination. Especially, InP is a promising candidate for PETE cathodes as it shows higher efficiency than GaAs due to its stronger photon absorption properties.",
keywords = "solar energy, photon-enhanced thermionic emission, device model, silicon, gallium arsenide, indium phosphide",
author = "Aapo Varpula and Kirsi Tappura and Mika Prunnila",
note = "Project code: 74074",
year = "2015",
doi = "10.1016/j.solmat.2014.12.021",
language = "English",
volume = "134",
pages = "351--358",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",

}

Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells. / Varpula, Aapo; Tappura, Kirsi; Prunnila, Mika.

In: Solar Energy Materials and Solar Cells, Vol. 134, 2015, p. 351-358.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells

AU - Varpula, Aapo

AU - Tappura, Kirsi

AU - Prunnila, Mika

N1 - Project code: 74074

PY - 2015

Y1 - 2015

N2 - Photon-enhanced thermionic emission (PETE) solar cells are photovoltaic devices designed for high temperature operation. The use of Si, GaAs, and InP as the cathode (i.e. the absorber and electron-emitter electrode) materials in PETE solar cells is investigated with numerical device models. The models describe the cathode one dimensionally and are valid also at high injection levels. The temperature dependence of the photon absorption coefficients and temperature and doping dependencies of electron mobilities are modelled. Simulated device characteristics are presented and the factors determining the efficiency of the PETE devices are discussed. Our results show that Si, GaAs, and InP are all promising materials for PETE solar cells, if the surface recombination, effective electron affinities, and thermal stability of these materials can be optimized. Owing to their strong absorption, GaAs and InP show higher efficiencies (20-25%) than Si (10-15%) in spite of their intense radiative recombination. Especially, InP is a promising candidate for PETE cathodes as it shows higher efficiency than GaAs due to its stronger photon absorption properties.

AB - Photon-enhanced thermionic emission (PETE) solar cells are photovoltaic devices designed for high temperature operation. The use of Si, GaAs, and InP as the cathode (i.e. the absorber and electron-emitter electrode) materials in PETE solar cells is investigated with numerical device models. The models describe the cathode one dimensionally and are valid also at high injection levels. The temperature dependence of the photon absorption coefficients and temperature and doping dependencies of electron mobilities are modelled. Simulated device characteristics are presented and the factors determining the efficiency of the PETE devices are discussed. Our results show that Si, GaAs, and InP are all promising materials for PETE solar cells, if the surface recombination, effective electron affinities, and thermal stability of these materials can be optimized. Owing to their strong absorption, GaAs and InP show higher efficiencies (20-25%) than Si (10-15%) in spite of their intense radiative recombination. Especially, InP is a promising candidate for PETE cathodes as it shows higher efficiency than GaAs due to its stronger photon absorption properties.

KW - solar energy

KW - photon-enhanced thermionic emission

KW - device model

KW - silicon

KW - gallium arsenide

KW - indium phosphide

U2 - 10.1016/j.solmat.2014.12.021

DO - 10.1016/j.solmat.2014.12.021

M3 - Article

VL - 134

SP - 351

EP - 358

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -