Si MOS technology for spin-based quantum computing

L. Hutin; B. Bertrand; R. Maurand; A. Crippa; M. Urdampilleta; Y.J. Kim; A. Amisse; Heorhii Bohuslavskyi; L. Bourdet; S. Barraud; X. Jeh; Y.-M. Niquet; M. Sanquer; C. Bauerle; T. Meunier; S. De Franceschi; M. Vinet

doi:10.1109/essderc.2018.8486863

Si MOS technology for spin-based quantum computing

L. Hutin (Corresponding author), B. Bertrand, R. Maurand, A. Crippa, M. Urdampilleta, Y.J. Kim, A. Amisse, Heorhii Bohuslavskyi, L. Bourdet, S. Barraud, X. Jeh, Y.-M. Niquet, M. Sanquer, C. Bauerle, T. Meunier, S. De Franceschi, M. Vinet

Not published at VTT

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

13 Citations (Scopus)

Abstract

We present recent advances made towards the realization of hole and electron spin quantum bits (qubits) localized within Si Quantum Dots (QDs). These devices, operated at cryogenic temperatures, can be defined by slightly modifying an SOI NanoWire FET fabrication flow, and are thus particularly relevant in the perspective of large-scale co-integration of qubits and their cryogenic control electronics

Original language	English
Title of host publication	2018 48th European Solid-State Device Research Conference, ESSDERC 2018
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	12-17
Number of pages	6
ISBN (Electronic)	978-1-5386-5401-9
DOIs	https://doi.org/10.1109/essderc.2018.8486863
Publication status	Published - Sept 2018
MoE publication type	A4 Article in a conference publication

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Hutin, L., Bertrand, B., Maurand, R., Crippa, A., Urdampilleta, M., Kim, Y. J., Amisse, A., Bohuslavskyi, H., Bourdet, L., Barraud, S., Jeh, X., Niquet, Y.-M., Sanquer, M., Bauerle, C., Meunier, T., Franceschi, S. D., & Vinet, M. (2018). Si MOS technology for spin-based quantum computing. In 2018 48th European Solid-State Device Research Conference, ESSDERC 2018 (pp. 12-17). Article 8486863 IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/essderc.2018.8486863

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title = "Si MOS technology for spin-based quantum computing",

abstract = "We present recent advances made towards the realization of hole and electron spin quantum bits (qubits) localized within Si Quantum Dots (QDs). These devices, operated at cryogenic temperatures, can be defined by slightly modifying an SOI NanoWire FET fabrication flow, and are thus particularly relevant in the perspective of large-scale co-integration of qubits and their cryogenic control electronics",

author = "L. Hutin and B. Bertrand and R. Maurand and A. Crippa and M. Urdampilleta and Y.J. Kim and A. Amisse and Heorhii Bohuslavskyi and L. Bourdet and S. Barraud and X. Jeh and Y.-M. Niquet and M. Sanquer and C. Bauerle and T. Meunier and Franceschi, {S. De} and M. Vinet",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

month = sep,

doi = "10.1109/essderc.2018.8486863",

language = "English",

pages = "12--17",

booktitle = "2018 48th European Solid-State Device Research Conference, ESSDERC 2018",

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Hutin, L, Bertrand, B, Maurand, R, Crippa, A, Urdampilleta, M, Kim, YJ, Amisse, A, Bohuslavskyi, H, Bourdet, L, Barraud, S, Jeh, X, Niquet, Y-M, Sanquer, M, Bauerle, C, Meunier, T, Franceschi, SD & Vinet, M 2018, Si MOS technology for spin-based quantum computing. in 2018 48th European Solid-State Device Research Conference, ESSDERC 2018., 8486863, IEEE Institute of Electrical and Electronic Engineers, pp. 12-17. https://doi.org/10.1109/essderc.2018.8486863

Si MOS technology for spin-based quantum computing. / Hutin, L. (Corresponding author); Bertrand, B.; Maurand, R. et al.
2018 48th European Solid-State Device Research Conference, ESSDERC 2018. IEEE Institute of Electrical and Electronic Engineers, 2018. p. 12-17 8486863.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Si MOS technology for spin-based quantum computing

AU - Hutin, L.

AU - Bertrand, B.

AU - Maurand, R.

AU - Crippa, A.

AU - Urdampilleta, M.

AU - Kim, Y.J.

AU - Amisse, A.

AU - Bohuslavskyi, Heorhii

AU - Bourdet, L.

AU - Barraud, S.

AU - Jeh, X.

AU - Niquet, Y.-M.

AU - Sanquer, M.

AU - Bauerle, C.

AU - Meunier, T.

AU - Franceschi, S. De

AU - Vinet, M.

PY - 2018/9

Y1 - 2018/9

N2 - We present recent advances made towards the realization of hole and electron spin quantum bits (qubits) localized within Si Quantum Dots (QDs). These devices, operated at cryogenic temperatures, can be defined by slightly modifying an SOI NanoWire FET fabrication flow, and are thus particularly relevant in the perspective of large-scale co-integration of qubits and their cryogenic control electronics

AB - We present recent advances made towards the realization of hole and electron spin quantum bits (qubits) localized within Si Quantum Dots (QDs). These devices, operated at cryogenic temperatures, can be defined by slightly modifying an SOI NanoWire FET fabrication flow, and are thus particularly relevant in the perspective of large-scale co-integration of qubits and their cryogenic control electronics

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U2 - 10.1109/essderc.2018.8486863

DO - 10.1109/essderc.2018.8486863

M3 - Conference article in proceedings

SP - 12

EP - 17

BT - 2018 48th European Solid-State Device Research Conference, ESSDERC 2018

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Si MOS technology for spin-based quantum computing

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