Abstract
| Original language | English |
|---|---|
| Title of host publication | Optical Components and Materials XVI |
| Editors | Michel J. F. Digonnet, Shibin Jiang |
| Publisher | International Society for Optics and Photonics SPIE |
| Number of pages | 12 |
| DOIs | |
| Publication status | Published - 27 Feb 2019 |
| MoE publication type | A4 Article in a conference publication |
| Event | Optical Components and Materials XVI: SPIE OPTO Conference OE103 - San Francisco, United States Duration: 2 Feb 2019 → 7 Feb 2019 |
Publication series
| Name | Proceedings of SPIE |
|---|---|
| Publisher | SPIE |
| Volume | 10914 |
| ISSN (Print) | 0277-786X |
| ISSN (Electronic) | 1996-756X |
Conference
| Conference | Optical Components and Materials XVI |
|---|---|
| Abbreviated title | SPIE OPTO OE103 |
| Country | United States |
| City | San Francisco |
| Period | 2/02/19 → 7/02/19 |
Fingerprint
Keywords
- photonics
- waveguide
Cite this
}
Si photonics using micron-size waveguides. / Aalto, Timo; Cherchi, Matteo; Harjanne, Mikko; Sun, Fei; Vehmas, Tapani; Bhat, Srivathsa; Kapulainen, Markku; Hokkanen, Ari; Lehtimäki, Lauri; Holmberg, Heikki; Haapalinna, Atte.
Optical Components and Materials XVI. ed. / Michel J. F. Digonnet; Shibin Jiang. International Society for Optics and Photonics SPIE, 2019. 109140B (Proceedings of SPIE, Vol. 10914).Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - Si photonics using micron-size waveguides
AU - Aalto, Timo
AU - Cherchi, Matteo
AU - Harjanne, Mikko
AU - Sun, Fei
AU - Vehmas, Tapani
AU - Bhat, Srivathsa
AU - Kapulainen, Markku
AU - Hokkanen, Ari
AU - Lehtimäki, Lauri
AU - Holmberg, Heikki
AU - Haapalinna, Atte
N1 - Invited Paper
PY - 2019/2/27
Y1 - 2019/2/27
N2 - This paper explains and demonstrates the unique properties of micron-size silicon-on-insulator (SOI) waveguides. It gives an overview of the silicon photonics research at VTT, as well as latest R&D highlights. The benefits of high mode confinement in rib and strip waveguides are described, reaching from low losses and small footprint to polarization independent operation and ultra-wide wavelength range from 1.2 to over 4 μm. Most of the results are from photonic integrated circuits (PICs) on 3 μm SOI, while a 25 Gbps link with a transceiver on 12 μm SOI is also reported. Wavelength multiplexing and filtering is demonstrated with some breakthrough performance in both echelle gratings and arrayed waveguide gratings. Lowest losses are below 1 dB and lowest cross-talk is below -35 dB. Progress towards monolithically integrated, broadband isolators is described, involving polarization splitters, reciprocal polarization rotators and nonreciprocal Faraday rotation in 3 μm SOI waveguide spirals. Quick update is presented about switches, modulators and Ge photodiodes up to 15 GHz bandwidth. Hybrid integration of lasers, modulators and photodiodes is also reported. The added value of trimmed SOI wafers and cavity-SOI wafers in Si photonics processing is addressed. Latest results also include up-reflecting mirrors with <0.5 dB loss, which support wafer-level testing and packaging.
AB - This paper explains and demonstrates the unique properties of micron-size silicon-on-insulator (SOI) waveguides. It gives an overview of the silicon photonics research at VTT, as well as latest R&D highlights. The benefits of high mode confinement in rib and strip waveguides are described, reaching from low losses and small footprint to polarization independent operation and ultra-wide wavelength range from 1.2 to over 4 μm. Most of the results are from photonic integrated circuits (PICs) on 3 μm SOI, while a 25 Gbps link with a transceiver on 12 μm SOI is also reported. Wavelength multiplexing and filtering is demonstrated with some breakthrough performance in both echelle gratings and arrayed waveguide gratings. Lowest losses are below 1 dB and lowest cross-talk is below -35 dB. Progress towards monolithically integrated, broadband isolators is described, involving polarization splitters, reciprocal polarization rotators and nonreciprocal Faraday rotation in 3 μm SOI waveguide spirals. Quick update is presented about switches, modulators and Ge photodiodes up to 15 GHz bandwidth. Hybrid integration of lasers, modulators and photodiodes is also reported. The added value of trimmed SOI wafers and cavity-SOI wafers in Si photonics processing is addressed. Latest results also include up-reflecting mirrors with <0.5 dB loss, which support wafer-level testing and packaging.
KW - photonics
KW - waveguide
UR - http://www.scopus.com/inward/record.url?scp=85066043367&partnerID=8YFLogxK
U2 - 10.1117/12.2516289
DO - 10.1117/12.2516289
M3 - Conference article in proceedings
T3 - Proceedings of SPIE
BT - Optical Components and Materials XVI
A2 - Digonnet, Michel J. F.
A2 - Jiang, Shibin
PB - International Society for Optics and Photonics SPIE
ER -