Abstract
This chapter presents an introduction to
superconductor-semiconductor (S-Sm) tunnel junction
coolers, before outlining some of the progresses made
during the nanofunction program on electron cooling from
300 mK in silicon-based junctions. PtSi is an interesting
material to consider as a Schottky barrier to Si because
of its role as a contact material in the semiconductor
industry. The chapter investigates carrier-phonon
coupling in unstrained silicon, with both n- and p-type
dopants, and the effect of increasing the strain in
silicon grown on a Si1-xGex virtual substrate with the Ge
fraction x of 20% and 30%. The reduction in e-ph coupling
shows promise for dramatic improvements in performance of
bolometric detectors for a variety of electromagnetic
radiation sensing applications using silicon based cold
electron bolometers.
| Original language | English |
|---|---|
| Title of host publication | Beyond CMOS Nanodevices 1 |
| Editors | Francis Balestra |
| Publisher | Wiley-Blackwell |
| Pages | 303-330 |
| ISBN (Electronic) | 978-1-118-98477-2 |
| ISBN (Print) | 978-1-84821-654-9 |
| DOIs | |
| Publication status | Published - 2014 |
| MoE publication type | D2 Article in professional manuals or guides or professional information systems or text book material |
Keywords
- carrier-phonon coupling
- silicon cold electron bolometer
- silicon-based Schottky barrier junctions
- superconductor-semiconductor (S-Sm) cooler
- unstrained silicon