Silicon-Based Cooling Elements

David Leadley, Martin Prest, Jouni Ahopelto, Tom Brien, David Gunnarsson, Phil Mauskopf, Juha Muhonen, Maksym Myronov, Hung Nguyen, Evan Parker, Mika Prunnila, James Richardson-Bullock, Vishal Shah, Terry Whall, Qing-Tai Zhao

    Research output: Chapter in Book/Report/Conference proceedingChapter or book articleProfessional

    Abstract

    This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.
    Original languageEnglish
    Title of host publicationBeyond CMOS Nanodevices 1
    PublisherWiley-Blackwell
    Pages303-330
    ISBN (Print)978-111898477-2, 978-184821654-9
    DOIs
    Publication statusPublished - 2014
    MoE publication typeD2 Article in professional manuals or guides or professional information systems or text book material

    Fingerprint

    cooling
    silicon
    bolometers
    coolers
    tunnel junctions
    electric contacts
    electromagnetic radiation
    electrons
    industries
    detectors

    Keywords

    • carrier-phonon coupling
    • silicon cold electron bolometer
    • silicon-based Schottky barrier junctions
    • superconductor-semiconductor (S-Sm) cooler
    • unstrained silicon

    Cite this

    Leadley, D., Prest, M., Ahopelto, J., Brien, T., Gunnarsson, D., Mauskopf, P., ... Zhao, Q-T. (2014). Silicon-Based Cooling Elements. In Beyond CMOS Nanodevices 1 (pp. 303-330). Wiley-Blackwell. https://doi.org/10.1002/9781118984772.ch11
    Leadley, David ; Prest, Martin ; Ahopelto, Jouni ; Brien, Tom ; Gunnarsson, David ; Mauskopf, Phil ; Muhonen, Juha ; Myronov, Maksym ; Nguyen, Hung ; Parker, Evan ; Prunnila, Mika ; Richardson-Bullock, James ; Shah, Vishal ; Whall, Terry ; Zhao, Qing-Tai. / Silicon-Based Cooling Elements. Beyond CMOS Nanodevices 1. Wiley-Blackwell, 2014. pp. 303-330
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    title = "Silicon-Based Cooling Elements",
    abstract = "This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20{\%} and 30{\%}. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.",
    keywords = "carrier-phonon coupling, silicon cold electron bolometer, silicon-based Schottky barrier junctions, superconductor-semiconductor (S-Sm) cooler, unstrained silicon",
    author = "David Leadley and Martin Prest and Jouni Ahopelto and Tom Brien and David Gunnarsson and Phil Mauskopf and Juha Muhonen and Maksym Myronov and Hung Nguyen and Evan Parker and Mika Prunnila and James Richardson-Bullock and Vishal Shah and Terry Whall and Qing-Tai Zhao",
    year = "2014",
    doi = "10.1002/9781118984772.ch11",
    language = "English",
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    Leadley, D, Prest, M, Ahopelto, J, Brien, T, Gunnarsson, D, Mauskopf, P, Muhonen, J, Myronov, M, Nguyen, H, Parker, E, Prunnila, M, Richardson-Bullock, J, Shah, V, Whall, T & Zhao, Q-T 2014, Silicon-Based Cooling Elements. in Beyond CMOS Nanodevices 1. Wiley-Blackwell, pp. 303-330. https://doi.org/10.1002/9781118984772.ch11

    Silicon-Based Cooling Elements. / Leadley, David; Prest, Martin; Ahopelto, Jouni; Brien, Tom; Gunnarsson, David; Mauskopf, Phil; Muhonen, Juha; Myronov, Maksym; Nguyen, Hung; Parker, Evan; Prunnila, Mika; Richardson-Bullock, James; Shah, Vishal; Whall, Terry; Zhao, Qing-Tai.

    Beyond CMOS Nanodevices 1. Wiley-Blackwell, 2014. p. 303-330.

    Research output: Chapter in Book/Report/Conference proceedingChapter or book articleProfessional

    TY - CHAP

    T1 - Silicon-Based Cooling Elements

    AU - Leadley, David

    AU - Prest, Martin

    AU - Ahopelto, Jouni

    AU - Brien, Tom

    AU - Gunnarsson, David

    AU - Mauskopf, Phil

    AU - Muhonen, Juha

    AU - Myronov, Maksym

    AU - Nguyen, Hung

    AU - Parker, Evan

    AU - Prunnila, Mika

    AU - Richardson-Bullock, James

    AU - Shah, Vishal

    AU - Whall, Terry

    AU - Zhao, Qing-Tai

    PY - 2014

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    N2 - This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

    AB - This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

    KW - carrier-phonon coupling

    KW - silicon cold electron bolometer

    KW - silicon-based Schottky barrier junctions

    KW - superconductor-semiconductor (S-Sm) cooler

    KW - unstrained silicon

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    M3 - Chapter or book article

    SN - 978-111898477-2

    SN - 978-184821654-9

    SP - 303

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    BT - Beyond CMOS Nanodevices 1

    PB - Wiley-Blackwell

    ER -

    Leadley D, Prest M, Ahopelto J, Brien T, Gunnarsson D, Mauskopf P et al. Silicon-Based Cooling Elements. In Beyond CMOS Nanodevices 1. Wiley-Blackwell. 2014. p. 303-330 https://doi.org/10.1002/9781118984772.ch11