Silicon-Based Cooling Elements

David Leadley, Martin Prest, Jouni Ahopelto, Tom Brien, David Gunnarsson, Phil Mauskopf, Juha Muhonen, Maksym Myronov, Hung Nguyen, Evan Parker, Mika Prunnila, James Richardson-Bullock, Vishal Shah, Terry Whall, Qing-Tai Zhao

Research output: Chapter in Book/Report/Conference proceedingChapter or book articleProfessional

Abstract

This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.
Original languageEnglish
Title of host publicationBeyond CMOS Nanodevices 1
PublisherWiley-Blackwell
Pages303-330
ISBN (Print)978-111898477-2, 978-184821654-9
DOIs
Publication statusPublished - 2014
MoE publication typeD2 Article in professional manuals or guides or professional information systems or text book material

Fingerprint

cooling
silicon
bolometers
coolers
tunnel junctions
electric contacts
electromagnetic radiation
electrons
industries
detectors

Keywords

  • carrier-phonon coupling
  • silicon cold electron bolometer
  • silicon-based Schottky barrier junctions
  • superconductor-semiconductor (S-Sm) cooler
  • unstrained silicon

Cite this

Leadley, D., Prest, M., Ahopelto, J., Brien, T., Gunnarsson, D., Mauskopf, P., ... Zhao, Q-T. (2014). Silicon-Based Cooling Elements. In Beyond CMOS Nanodevices 1 (pp. 303-330). Wiley-Blackwell. https://doi.org/10.1002/9781118984772.ch11
Leadley, David ; Prest, Martin ; Ahopelto, Jouni ; Brien, Tom ; Gunnarsson, David ; Mauskopf, Phil ; Muhonen, Juha ; Myronov, Maksym ; Nguyen, Hung ; Parker, Evan ; Prunnila, Mika ; Richardson-Bullock, James ; Shah, Vishal ; Whall, Terry ; Zhao, Qing-Tai. / Silicon-Based Cooling Elements. Beyond CMOS Nanodevices 1. Wiley-Blackwell, 2014. pp. 303-330
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author = "David Leadley and Martin Prest and Jouni Ahopelto and Tom Brien and David Gunnarsson and Phil Mauskopf and Juha Muhonen and Maksym Myronov and Hung Nguyen and Evan Parker and Mika Prunnila and James Richardson-Bullock and Vishal Shah and Terry Whall and Qing-Tai Zhao",
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Leadley, D, Prest, M, Ahopelto, J, Brien, T, Gunnarsson, D, Mauskopf, P, Muhonen, J, Myronov, M, Nguyen, H, Parker, E, Prunnila, M, Richardson-Bullock, J, Shah, V, Whall, T & Zhao, Q-T 2014, Silicon-Based Cooling Elements. in Beyond CMOS Nanodevices 1. Wiley-Blackwell, pp. 303-330. https://doi.org/10.1002/9781118984772.ch11

Silicon-Based Cooling Elements. / Leadley, David; Prest, Martin; Ahopelto, Jouni; Brien, Tom; Gunnarsson, David; Mauskopf, Phil; Muhonen, Juha; Myronov, Maksym; Nguyen, Hung; Parker, Evan; Prunnila, Mika; Richardson-Bullock, James; Shah, Vishal; Whall, Terry; Zhao, Qing-Tai.

Beyond CMOS Nanodevices 1. Wiley-Blackwell, 2014. p. 303-330.

Research output: Chapter in Book/Report/Conference proceedingChapter or book articleProfessional

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AU - Prest, Martin

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AU - Brien, Tom

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AU - Mauskopf, Phil

AU - Muhonen, Juha

AU - Myronov, Maksym

AU - Nguyen, Hung

AU - Parker, Evan

AU - Prunnila, Mika

AU - Richardson-Bullock, James

AU - Shah, Vishal

AU - Whall, Terry

AU - Zhao, Qing-Tai

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AB - This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

KW - carrier-phonon coupling

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KW - silicon-based Schottky barrier junctions

KW - superconductor-semiconductor (S-Sm) cooler

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DO - 10.1002/9781118984772.ch11

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SN - 978-111898477-2

SN - 978-184821654-9

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BT - Beyond CMOS Nanodevices 1

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Leadley D, Prest M, Ahopelto J, Brien T, Gunnarsson D, Mauskopf P et al. Silicon-Based Cooling Elements. In Beyond CMOS Nanodevices 1. Wiley-Blackwell. 2014. p. 303-330 https://doi.org/10.1002/9781118984772.ch11