Silicon-Based Cooling Elements

David Leadley; Martin Prest; Jouni Ahopelto; Tom Brien; David Gunnarsson; Phil Mauskopf; Juha Muhonen; Maksym Myronov; Hung Nguyen; Evan Parker; Mika Prunnila; James Richardson-Bullock; Vishal Shah; Terry Whall; Qing-Tai Zhao

doi:10.1002/9781118984772.ch11

Silicon-Based Cooling Elements

David Leadley
, Martin Prest
, Jouni Ahopelto
, Tom Brien
, David Gunnarsson
, Phil Mauskopf
, Juha Muhonen
, Maksym Myronov
, Hung Nguyen
, Evan Parker
, Mika Prunnila
, James Richardson-Bullock
, Vishal Shah
, Terry Whall
, Qing-Tai Zhao

Research output: Chapter in Book/Report/Conference proceeding › Chapter or book article › Professional

Abstract

This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

Original language	English
Title of host publication	Beyond CMOS Nanodevices 1
Editors	Francis Balestra
Publisher	Wiley-Blackwell
Pages	303-330
ISBN (Electronic)	978-1-118-98477-2
ISBN (Print)	978-1-84821-654-9
DOIs	https://doi.org/10.1002/9781118984772.ch11
Publication status	Published - 2014
MoE publication type	D2 Article in professional manuals or guides or professional information systems or text book material

Keywords

carrier-phonon coupling
silicon cold electron bolometer
silicon-based Schottky barrier junctions
superconductor-semiconductor (S-Sm) cooler
unstrained silicon

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10.1002/9781118984772.ch11

Cite this

@inbook{48d18947aebe4275bf446b23b8b444b2,

title = "Silicon-Based Cooling Elements",

abstract = "This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20\% and 30\%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.",

keywords = "carrier-phonon coupling, silicon cold electron bolometer, silicon-based Schottky barrier junctions, superconductor-semiconductor (S-Sm) cooler, unstrained silicon",

author = "David Leadley and Martin Prest and Jouni Ahopelto and Tom Brien and David Gunnarsson and Phil Mauskopf and Juha Muhonen and Maksym Myronov and Hung Nguyen and Evan Parker and Mika Prunnila and James Richardson-Bullock and Vishal Shah and Terry Whall and Qing-Tai Zhao",

year = "2014",

doi = "10.1002/9781118984772.ch11",

language = "English",

isbn = "978-1-84821-654-9",

pages = "303--330",

editor = "Francis Balestra",

booktitle = "Beyond CMOS Nanodevices 1",

publisher = "Wiley-Blackwell",

address = "United States",

}

TY - CHAP

T1 - Silicon-Based Cooling Elements

AU - Leadley, David

AU - Prest, Martin

AU - Ahopelto, Jouni

AU - Brien, Tom

AU - Gunnarsson, David

AU - Mauskopf, Phil

AU - Muhonen, Juha

AU - Myronov, Maksym

AU - Nguyen, Hung

AU - Parker, Evan

AU - Prunnila, Mika

AU - Richardson-Bullock, James

AU - Shah, Vishal

AU - Whall, Terry

AU - Zhao, Qing-Tai

PY - 2014

Y1 - 2014

N2 - This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

AB - This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

KW - carrier-phonon coupling

KW - silicon cold electron bolometer

KW - silicon-based Schottky barrier junctions

KW - superconductor-semiconductor (S-Sm) cooler

KW - unstrained silicon

U2 - 10.1002/9781118984772.ch11

DO - 10.1002/9781118984772.ch11

M3 - Chapter or book article

SN - 978-1-84821-654-9

SP - 303

EP - 330

BT - Beyond CMOS Nanodevices 1

A2 - Balestra, Francis

PB - Wiley-Blackwell

ER -

Silicon-Based Cooling Elements

Abstract

Keywords

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