Silicon based photon-enhanced thermionic emission devices

Aapo Varpula, Kasper Reck, Mika Prunnila, Ole Hansen

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

Abstract

Silicon has been widely used in semiconductor industry for decades. This gives rise to the availability of cost-effective materials and a wide range of processing tools and knowhow. The band gap of silicon is also fairly optimal for harvesting solar energy. In fact, the most of the photovoltaic devices manufactured nowadays are based on silicon. Therefore, silicon would also be a good candidate for photon-enhanced thermionic emission (PETE) solar cells. We investigate the use of silicon as the cathode material in PETE cells. The investigation is based on our previously published model and experimental results obtained from surface-science measurements in an ultra-high vacuum setup. The model takes into account both front and back side surface recombination, the Shockley-Read-Hall (SRH), Auger, and radiative recombination in the bulk as well as the temperature dependence of the band gap, donor ionization, absorption coefficient, and charge carrier mobilities. Our results indicate the PETE effect in silicon, thus further supporting use of silicon in PETE based solar power.
Original languageEnglish
Title of host publicationWorkshop Abstracts
Publication statusPublished - 2014
EventInternational Workshop on Photon-Enhanced Thermionic Emission, PETE-2014 - Tel Aviv, Israel
Duration: 23 Jun 201424 Jun 2014

Conference

ConferenceInternational Workshop on Photon-Enhanced Thermionic Emission, PETE-2014
Abbreviated titlePETE-2014
CountryIsrael
CityTel Aviv
Period23/06/1424/06/14

Fingerprint

thermionic emission
photons
silicon
solar energy
radiative recombination
carrier mobility
ultrahigh vacuum
availability
charge carriers
absorptivity
solar cells
cathodes
industries
costs
ionization
temperature dependence
cells

Keywords

  • solar energy
  • photon-enhanced thermionic emission
  • silicon

Cite this

Varpula, A., Reck, K., Prunnila, M., & Hansen, O. (2014). Silicon based photon-enhanced thermionic emission devices. In Workshop Abstracts
Varpula, Aapo ; Reck, Kasper ; Prunnila, Mika ; Hansen, Ole. / Silicon based photon-enhanced thermionic emission devices. Workshop Abstracts. 2014.
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abstract = "Silicon has been widely used in semiconductor industry for decades. This gives rise to the availability of cost-effective materials and a wide range of processing tools and knowhow. The band gap of silicon is also fairly optimal for harvesting solar energy. In fact, the most of the photovoltaic devices manufactured nowadays are based on silicon. Therefore, silicon would also be a good candidate for photon-enhanced thermionic emission (PETE) solar cells. We investigate the use of silicon as the cathode material in PETE cells. The investigation is based on our previously published model and experimental results obtained from surface-science measurements in an ultra-high vacuum setup. The model takes into account both front and back side surface recombination, the Shockley-Read-Hall (SRH), Auger, and radiative recombination in the bulk as well as the temperature dependence of the band gap, donor ionization, absorption coefficient, and charge carrier mobilities. Our results indicate the PETE effect in silicon, thus further supporting use of silicon in PETE based solar power.",
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Varpula, A, Reck, K, Prunnila, M & Hansen, O 2014, Silicon based photon-enhanced thermionic emission devices. in Workshop Abstracts. International Workshop on Photon-Enhanced Thermionic Emission, PETE-2014, Tel Aviv, Israel, 23/06/14.

Silicon based photon-enhanced thermionic emission devices. / Varpula, Aapo; Reck, Kasper; Prunnila, Mika; Hansen, Ole.

Workshop Abstracts. 2014.

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

TY - CHAP

T1 - Silicon based photon-enhanced thermionic emission devices

AU - Varpula, Aapo

AU - Reck, Kasper

AU - Prunnila, Mika

AU - Hansen, Ole

N1 - Project code: 74074

PY - 2014

Y1 - 2014

N2 - Silicon has been widely used in semiconductor industry for decades. This gives rise to the availability of cost-effective materials and a wide range of processing tools and knowhow. The band gap of silicon is also fairly optimal for harvesting solar energy. In fact, the most of the photovoltaic devices manufactured nowadays are based on silicon. Therefore, silicon would also be a good candidate for photon-enhanced thermionic emission (PETE) solar cells. We investigate the use of silicon as the cathode material in PETE cells. The investigation is based on our previously published model and experimental results obtained from surface-science measurements in an ultra-high vacuum setup. The model takes into account both front and back side surface recombination, the Shockley-Read-Hall (SRH), Auger, and radiative recombination in the bulk as well as the temperature dependence of the band gap, donor ionization, absorption coefficient, and charge carrier mobilities. Our results indicate the PETE effect in silicon, thus further supporting use of silicon in PETE based solar power.

AB - Silicon has been widely used in semiconductor industry for decades. This gives rise to the availability of cost-effective materials and a wide range of processing tools and knowhow. The band gap of silicon is also fairly optimal for harvesting solar energy. In fact, the most of the photovoltaic devices manufactured nowadays are based on silicon. Therefore, silicon would also be a good candidate for photon-enhanced thermionic emission (PETE) solar cells. We investigate the use of silicon as the cathode material in PETE cells. The investigation is based on our previously published model and experimental results obtained from surface-science measurements in an ultra-high vacuum setup. The model takes into account both front and back side surface recombination, the Shockley-Read-Hall (SRH), Auger, and radiative recombination in the bulk as well as the temperature dependence of the band gap, donor ionization, absorption coefficient, and charge carrier mobilities. Our results indicate the PETE effect in silicon, thus further supporting use of silicon in PETE based solar power.

KW - solar energy

KW - photon-enhanced thermionic emission

KW - silicon

M3 - Conference abstract in proceedings

BT - Workshop Abstracts

ER -