Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.
- amorphous carbon
- annealing behavior