Silicon diffusion in amorphous carbon films

E. Vainonen-Ahlgren (Corresponding Author), T. Ahlgren, L. Khriachtcev, Jari Likonen, Sari Lehto, J. Keinonen, C. Wu

    Research output: Contribution to journalArticleScientificpeer-review

    7 Citations (Scopus)

    Abstract

    Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.
    Original languageEnglish
    Pages (from-to)216-219
    Number of pages4
    JournalJournal of Nuclear Materials
    Volume290-293
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Carbon films
    Amorphous carbon
    Silicon
    Amorphous films
    Annealing
    annealing
    carbon
    arc discharges
    silicon
    Secondary ion mass spectrometry
    secondary ion mass spectrometry
    Raman spectroscopy
    diffusion coefficient
    Activation energy
    activation energy
    profiles

    Keywords

    • diffusion
    • silicon
    • amorphous carbon
    • annealing behavior

    Cite this

    Vainonen-Ahlgren, E., Ahlgren, T., Khriachtcev, L., Likonen, J., Lehto, S., Keinonen, J., & Wu, C. (2001). Silicon diffusion in amorphous carbon films. Journal of Nuclear Materials, 290-293, 216-219. https://doi.org/10.1016/S0022-3115(00)00564-X
    Vainonen-Ahlgren, E. ; Ahlgren, T. ; Khriachtcev, L. ; Likonen, Jari ; Lehto, Sari ; Keinonen, J. ; Wu, C. / Silicon diffusion in amorphous carbon films. In: Journal of Nuclear Materials. 2001 ; Vol. 290-293. pp. 216-219.
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    title = "Silicon diffusion in amorphous carbon films",
    abstract = "Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.",
    keywords = "diffusion, silicon, amorphous carbon, annealing behavior",
    author = "E. Vainonen-Ahlgren and T. Ahlgren and L. Khriachtcev and Jari Likonen and Sari Lehto and J. Keinonen and C. Wu",
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    language = "English",
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    Vainonen-Ahlgren, E, Ahlgren, T, Khriachtcev, L, Likonen, J, Lehto, S, Keinonen, J & Wu, C 2001, 'Silicon diffusion in amorphous carbon films', Journal of Nuclear Materials, vol. 290-293, pp. 216-219. https://doi.org/10.1016/S0022-3115(00)00564-X

    Silicon diffusion in amorphous carbon films. / Vainonen-Ahlgren, E. (Corresponding Author); Ahlgren, T.; Khriachtcev, L.; Likonen, Jari; Lehto, Sari; Keinonen, J.; Wu, C.

    In: Journal of Nuclear Materials, Vol. 290-293, 2001, p. 216-219.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Silicon diffusion in amorphous carbon films

    AU - Vainonen-Ahlgren, E.

    AU - Ahlgren, T.

    AU - Khriachtcev, L.

    AU - Likonen, Jari

    AU - Lehto, Sari

    AU - Keinonen, J.

    AU - Wu, C.

    N1 - Project code: K9SU00212

    PY - 2001

    Y1 - 2001

    N2 - Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.

    AB - Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.

    KW - diffusion

    KW - silicon

    KW - amorphous carbon

    KW - annealing behavior

    U2 - 10.1016/S0022-3115(00)00564-X

    DO - 10.1016/S0022-3115(00)00564-X

    M3 - Article

    VL - 290-293

    SP - 216

    EP - 219

    JO - Journal of Nuclear Materials

    JF - Journal of Nuclear Materials

    SN - 0022-3115

    ER -

    Vainonen-Ahlgren E, Ahlgren T, Khriachtcev L, Likonen J, Lehto S, Keinonen J et al. Silicon diffusion in amorphous carbon films. Journal of Nuclear Materials. 2001;290-293:216-219. https://doi.org/10.1016/S0022-3115(00)00564-X