Silicon diffusion in amorphous carbon films

E. Vainonen-Ahlgren; T. Ahlgren; L. Khriachtcev; Jari Likonen; Sari Lehto; J. Keinonen; C. Wu

doi:10.1016/S0022-3115(00)00564-X

Silicon diffusion in amorphous carbon films

E. Vainonen-Ahlgren (Corresponding Author), T. Ahlgren, L. Khriachtcev, Jari Likonen, Sari Lehto, J. Keinonen, C. Wu

Research output: Contribution to journal › Article › Scientific › peer-review

8 Citations (Scopus)

Abstract

Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X10⁴⁺¹nm²s^-1.

Original language	English
Pages (from-to)	216-219
Number of pages	4
Journal	Journal of Nuclear Materials
Volume	290-293
DOIs	https://doi.org/10.1016/S0022-3115(00)00564-X
Publication status	Published - 2001
MoE publication type	A1 Journal article-refereed

Keywords

diffusion
silicon
amorphous carbon
annealing behavior

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/S0022-3115(00)00564-X

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title = "Silicon diffusion in amorphous carbon films",

abstract = "Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.",

keywords = "diffusion, silicon, amorphous carbon, annealing behavior",

author = "E. Vainonen-Ahlgren and T. Ahlgren and L. Khriachtcev and Jari Likonen and Sari Lehto and J. Keinonen and C. Wu",

note = "Project code: K9SU00212",

year = "2001",

doi = "10.1016/S0022-3115(00)00564-X",

language = "English",

volume = "290-293",

pages = "216--219",

journal = "Journal of Nuclear Materials",

issn = "0022-3115",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Silicon diffusion in amorphous carbon films

AU - Vainonen-Ahlgren, E.

AU - Ahlgren, T.

AU - Khriachtcev, L.

AU - Likonen, Jari

AU - Lehto, Sari

AU - Keinonen, J.

AU - Wu, C.

N1 - Project code: K9SU00212

PY - 2001

Y1 - 2001

N2 - Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.

AB - Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.

KW - diffusion

KW - silicon

KW - amorphous carbon

KW - annealing behavior

U2 - 10.1016/S0022-3115(00)00564-X

DO - 10.1016/S0022-3115(00)00564-X

M3 - Article

SN - 0022-3115

VL - 290-293

SP - 216

EP - 219

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

ER -

Silicon diffusion in amorphous carbon films

Abstract

Keywords

UN SDGs

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