Silicon diffusion in amorphous carbon films

E. Vainonen-Ahlgren (Corresponding Author), T. Ahlgren, L. Khriachtcev, Jari Likonen, Sari Lehto, J. Keinonen, C. Wu

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    7 Citations (Scopus)

    Abstract

    Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.
    Original languageEnglish
    Pages (from-to)216-219
    Number of pages4
    JournalJournal of Nuclear Materials
    Volume290-293
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

    Keywords

    • diffusion
    • silicon
    • amorphous carbon
    • annealing behavior

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  • Cite this

    Vainonen-Ahlgren, E., Ahlgren, T., Khriachtcev, L., Likonen, J., Lehto, S., Keinonen, J., & Wu, C. (2001). Silicon diffusion in amorphous carbon films. Journal of Nuclear Materials, 290-293, 216-219. https://doi.org/10.1016/S0022-3115(00)00564-X