Silicon diffusion in amorphous carbon films

E. Vainonen-Ahlgren (Corresponding Author), T. Ahlgren, L. Khriachtcev, Jari Likonen, Sari Lehto, J. Keinonen, C. Wu

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)


    Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.
    Original languageEnglish
    Pages (from-to)216-219
    Number of pages4
    JournalJournal of Nuclear Materials
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed


    • diffusion
    • silicon
    • amorphous carbon
    • annealing behavior


    Dive into the research topics of 'Silicon diffusion in amorphous carbon films'. Together they form a unique fingerprint.

    Cite this