Silicon diffusion in amorphous carbon films

E. Vainonen-Ahlgren (Corresponding Author), T. Ahlgren, L. Khriachtcev, Jari Likonen, Sari Lehto, J. Keinonen, C. Wu

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)

Abstract

Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.
Original languageEnglish
Pages (from-to)216-219
Number of pages4
JournalJournal of Nuclear Materials
Volume290-293
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

Fingerprint

Carbon films
Amorphous carbon
Silicon
Amorphous films
Annealing
annealing
carbon
arc discharges
silicon
Secondary ion mass spectrometry
secondary ion mass spectrometry
Raman spectroscopy
diffusion coefficient
Activation energy
activation energy
profiles

Keywords

  • diffusion
  • silicon
  • amorphous carbon
  • annealing behavior

Cite this

Vainonen-Ahlgren, E., Ahlgren, T., Khriachtcev, L., Likonen, J., Lehto, S., Keinonen, J., & Wu, C. (2001). Silicon diffusion in amorphous carbon films. Journal of Nuclear Materials, 290-293, 216-219. https://doi.org/10.1016/S0022-3115(00)00564-X
Vainonen-Ahlgren, E. ; Ahlgren, T. ; Khriachtcev, L. ; Likonen, Jari ; Lehto, Sari ; Keinonen, J. ; Wu, C. / Silicon diffusion in amorphous carbon films. In: Journal of Nuclear Materials. 2001 ; Vol. 290-293. pp. 216-219.
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Vainonen-Ahlgren, E, Ahlgren, T, Khriachtcev, L, Likonen, J, Lehto, S, Keinonen, J & Wu, C 2001, 'Silicon diffusion in amorphous carbon films', Journal of Nuclear Materials, vol. 290-293, pp. 216-219. https://doi.org/10.1016/S0022-3115(00)00564-X

Silicon diffusion in amorphous carbon films. / Vainonen-Ahlgren, E. (Corresponding Author); Ahlgren, T.; Khriachtcev, L.; Likonen, Jari; Lehto, Sari; Keinonen, J.; Wu, C.

In: Journal of Nuclear Materials, Vol. 290-293, 2001, p. 216-219.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Silicon diffusion in amorphous carbon films

AU - Vainonen-Ahlgren, E.

AU - Ahlgren, T.

AU - Khriachtcev, L.

AU - Likonen, Jari

AU - Lehto, Sari

AU - Keinonen, J.

AU - Wu, C.

N1 - Project code: K9SU00212

PY - 2001

Y1 - 2001

N2 - Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.

AB - Annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied. Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry (SIMS). The obtained diffusion coefficients resulted in an activation energy of 1.6±0.1 eV and pre-exponential factor of 1.9X104+1nm2s-1.

KW - diffusion

KW - silicon

KW - amorphous carbon

KW - annealing behavior

U2 - 10.1016/S0022-3115(00)00564-X

DO - 10.1016/S0022-3115(00)00564-X

M3 - Article

VL - 290-293

SP - 216

EP - 219

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

SN - 0022-3115

ER -

Vainonen-Ahlgren E, Ahlgren T, Khriachtcev L, Likonen J, Lehto S, Keinonen J et al. Silicon diffusion in amorphous carbon films. Journal of Nuclear Materials. 2001;290-293:216-219. https://doi.org/10.1016/S0022-3115(00)00564-X