Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films
- Riikka L. Puurunen*
- , T. Suni
- , Oili M.E. Ylivaara
- , H. Kondo
- , M. Ammar
- , T. Ishida
- , H. Fujita
- , A. Bosseboeuf
- , S. Zaima
- , Hannu Kattelus
*Corresponding author for this work
- VTT (former employee or external)
- University of Tokyo
- Nagoya University
- University of Paris-Saclay
Research output: Contribution to journal › Article › Scientific › peer-review
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