Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films

Riikka L. Puurunen*, T. Suni, Oili M.E. Ylivaara, H. Kondo, M. Ammar, T. Ishida, H. Fujita, A. Bosseboeuf, S. Zaima, Hannu Kattelus

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    15 Citations (Scopus)

    Fingerprint

    Dive into the research topics of 'Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films'. Together they form a unique fingerprint.

    Keyphrases

    INIS

    Engineering

    Material Science