Silicon layer transfer using plasma hydrogenation

Peng Chen (Corresponding Author), S.S. Lau, Paul K. Chu, Kimmo Henttinen, Tommi Suni, Ilkka Suni, N. David Theodore, T.L. Alford, J.W. Mayer, Lin Shao, M. Nastasi

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)


In this work, we demonstrate a novel approach for the transfer of Si layers onto handle wafers, induced by plasma hydrogenation. In the conventional ion-cut process, hydrogen ion implantation is used to initiate layer delamination at a desired depth, which leads to ion damage in the transferred layer. In this study, we investigated the use of plasma hydrogenation to achieve high-quality layer transfer. To place hydrogen atoms introduced during plasma hydrogenation at a specific depth, a uniform trapping layer for H atoms must be prepared in the substrate before hydrogenation. The hydrogenated Si wafer was then bonded to another Si wafer coated with a thermal oxide, followed by thermal annealing to induce Si layer transfer. Cross-section transmission electron microscopy showed that the transferred Si layer was relatively free of lattice damage. The H trapping during plasma hydrogenation, and the subsequent layer delamination mechanism, are discussed. These results show direct evidence of the feasibility of using plasma hydrogenation to transfer relatively defect-free Si layers.
Original languageEnglish
Article number111910
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed


  • silicon
  • elemental semiconductors
  • hydrogenation
  • annealing
  • transmission electron microscopy
  • delamination
  • plasma materials processing
  • plasma
  • ion implantation


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