Silicon layer transfer using plasma hydrogenation

Peng Chen (Corresponding Author), S.S. Lau, Paul K. Chu, Kimmo Henttinen, Tommi Suni, Ilkka Suni, N. David Theodore, T.L. Alford, J.W. Mayer, Lin Shao, M. Nastasi

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

In this work, we demonstrate a novel approach for the transfer of Si layers onto handle wafers, induced by plasma hydrogenation. In the conventional ion-cut process, hydrogen ion implantation is used to initiate layer delamination at a desired depth, which leads to ion damage in the transferred layer. In this study, we investigated the use of plasma hydrogenation to achieve high-quality layer transfer. To place hydrogen atoms introduced during plasma hydrogenation at a specific depth, a uniform trapping layer for H atoms must be prepared in the substrate before hydrogenation. The hydrogenated Si wafer was then bonded to another Si wafer coated with a thermal oxide, followed by thermal annealing to induce Si layer transfer. Cross-section transmission electron microscopy showed that the transferred Si layer was relatively free of lattice damage. The H trapping during plasma hydrogenation, and the subsequent layer delamination mechanism, are discussed. These results show direct evidence of the feasibility of using plasma hydrogenation to transfer relatively defect-free Si layers.
Original languageEnglish
Article number111910
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number11
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

hydrogenation
silicon
wafers
trapping
damage
hydrogen ions
ion implantation
hydrogen atoms
ions
transmission electron microscopy
annealing
oxides
cross sections
defects
atoms

Keywords

  • silicon
  • elemental semiconductors
  • hydrogenation
  • annealing
  • transmission electron microscopy
  • delamination
  • plasma materials processing
  • plasma
  • ion implantation

Cite this

Chen, P., Lau, S. S., Chu, P. K., Henttinen, K., Suni, T., Suni, I., ... Nastasi, M. (2005). Silicon layer transfer using plasma hydrogenation. Applied Physics Letters, 87(11), [111910]. https://doi.org/10.1063/1.2048811
Chen, Peng ; Lau, S.S. ; Chu, Paul K. ; Henttinen, Kimmo ; Suni, Tommi ; Suni, Ilkka ; Theodore, N. David ; Alford, T.L. ; Mayer, J.W. ; Shao, Lin ; Nastasi, M. / Silicon layer transfer using plasma hydrogenation. In: Applied Physics Letters. 2005 ; Vol. 87, No. 11.
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abstract = "In this work, we demonstrate a novel approach for the transfer of Si layers onto handle wafers, induced by plasma hydrogenation. In the conventional ion-cut process, hydrogen ion implantation is used to initiate layer delamination at a desired depth, which leads to ion damage in the transferred layer. In this study, we investigated the use of plasma hydrogenation to achieve high-quality layer transfer. To place hydrogen atoms introduced during plasma hydrogenation at a specific depth, a uniform trapping layer for H atoms must be prepared in the substrate before hydrogenation. The hydrogenated Si wafer was then bonded to another Si wafer coated with a thermal oxide, followed by thermal annealing to induce Si layer transfer. Cross-section transmission electron microscopy showed that the transferred Si layer was relatively free of lattice damage. The H trapping during plasma hydrogenation, and the subsequent layer delamination mechanism, are discussed. These results show direct evidence of the feasibility of using plasma hydrogenation to transfer relatively defect-free Si layers.",
keywords = "silicon, elemental semiconductors, hydrogenation, annealing, transmission electron microscopy, delamination, plasma materials processing, plasma, ion implantation",
author = "Peng Chen and S.S. Lau and Chu, {Paul K.} and Kimmo Henttinen and Tommi Suni and Ilkka Suni and Theodore, {N. David} and T.L. Alford and J.W. Mayer and Lin Shao and M. Nastasi",
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Chen, P, Lau, SS, Chu, PK, Henttinen, K, Suni, T, Suni, I, Theodore, ND, Alford, TL, Mayer, JW, Shao, L & Nastasi, M 2005, 'Silicon layer transfer using plasma hydrogenation', Applied Physics Letters, vol. 87, no. 11, 111910. https://doi.org/10.1063/1.2048811

Silicon layer transfer using plasma hydrogenation. / Chen, Peng (Corresponding Author); Lau, S.S.; Chu, Paul K.; Henttinen, Kimmo; Suni, Tommi; Suni, Ilkka; Theodore, N. David; Alford, T.L.; Mayer, J.W.; Shao, Lin; Nastasi, M.

In: Applied Physics Letters, Vol. 87, No. 11, 111910, 2005.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Silicon layer transfer using plasma hydrogenation

AU - Chen, Peng

AU - Lau, S.S.

AU - Chu, Paul K.

AU - Henttinen, Kimmo

AU - Suni, Tommi

AU - Suni, Ilkka

AU - Theodore, N. David

AU - Alford, T.L.

AU - Mayer, J.W.

AU - Shao, Lin

AU - Nastasi, M.

N1 - Project code: T5SU00302

PY - 2005

Y1 - 2005

N2 - In this work, we demonstrate a novel approach for the transfer of Si layers onto handle wafers, induced by plasma hydrogenation. In the conventional ion-cut process, hydrogen ion implantation is used to initiate layer delamination at a desired depth, which leads to ion damage in the transferred layer. In this study, we investigated the use of plasma hydrogenation to achieve high-quality layer transfer. To place hydrogen atoms introduced during plasma hydrogenation at a specific depth, a uniform trapping layer for H atoms must be prepared in the substrate before hydrogenation. The hydrogenated Si wafer was then bonded to another Si wafer coated with a thermal oxide, followed by thermal annealing to induce Si layer transfer. Cross-section transmission electron microscopy showed that the transferred Si layer was relatively free of lattice damage. The H trapping during plasma hydrogenation, and the subsequent layer delamination mechanism, are discussed. These results show direct evidence of the feasibility of using plasma hydrogenation to transfer relatively defect-free Si layers.

AB - In this work, we demonstrate a novel approach for the transfer of Si layers onto handle wafers, induced by plasma hydrogenation. In the conventional ion-cut process, hydrogen ion implantation is used to initiate layer delamination at a desired depth, which leads to ion damage in the transferred layer. In this study, we investigated the use of plasma hydrogenation to achieve high-quality layer transfer. To place hydrogen atoms introduced during plasma hydrogenation at a specific depth, a uniform trapping layer for H atoms must be prepared in the substrate before hydrogenation. The hydrogenated Si wafer was then bonded to another Si wafer coated with a thermal oxide, followed by thermal annealing to induce Si layer transfer. Cross-section transmission electron microscopy showed that the transferred Si layer was relatively free of lattice damage. The H trapping during plasma hydrogenation, and the subsequent layer delamination mechanism, are discussed. These results show direct evidence of the feasibility of using plasma hydrogenation to transfer relatively defect-free Si layers.

KW - silicon

KW - elemental semiconductors

KW - hydrogenation

KW - annealing

KW - transmission electron microscopy

KW - delamination

KW - plasma materials processing

KW - plasma

KW - ion implantation

U2 - 10.1063/1.2048811

DO - 10.1063/1.2048811

M3 - Article

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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M1 - 111910

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Chen P, Lau SS, Chu PK, Henttinen K, Suni T, Suni I et al. Silicon layer transfer using plasma hydrogenation. Applied Physics Letters. 2005;87(11). 111910. https://doi.org/10.1063/1.2048811