Silicon-on-insulator wafers with buried cavities

Tommi Suni (Corresponding Author), Kimmo Henttinen, James Dekker, Hannu Luoto, Martin Kulawski, J. Mäkinen, R. Mutikainen

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of silicon-on-insulator (SOI) wafers with buried cavities. The thin Si diaphragm over the cavity is deflected downward during the grinding and polishing, as the thinning is carried out without supporting the diaphragm. The deflection causes thickness variation for the Si diaphragm that can also be observed as a hill on the wafer surface after thinning. The results show that the thickness variation of the Si diaphragm increases with increasing cavity size and with decreasing SOI layer thickness. After grinding the measured hill height was about 1.5 μm for a 20-μm -thick Si diaphragm over a 1×1 mm cavity. The hill height was reduced to less than 0.5 μm when a small supporting column was placed under the diaphragm. With polishing the hill height was further reduced to <0.1 μm. It appears that mechanical thinning of the bonded wafers with pre-etched cavities is a viable method for various applications.
Original languageEnglish
Pages (from-to)G299-G303
Number of pages5
JournalJournal of the Electrochemical Society
Volume153
Issue number4
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon
Diaphragms
Polishing
Silicon wafers
Fabrication

Keywords

  • Wafer bonding
  • SOI
  • MEMS
  • direct bonding

Cite this

Suni, T., Henttinen, K., Dekker, J., Luoto, H., Kulawski, M., Mäkinen, J., & Mutikainen, R. (2006). Silicon-on-insulator wafers with buried cavities. Journal of the Electrochemical Society, 153(4), G299-G303. https://doi.org/10.1149/1.2167955
Suni, Tommi ; Henttinen, Kimmo ; Dekker, James ; Luoto, Hannu ; Kulawski, Martin ; Mäkinen, J. ; Mutikainen, R. / Silicon-on-insulator wafers with buried cavities. In: Journal of the Electrochemical Society. 2006 ; Vol. 153, No. 4. pp. G299-G303.
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Suni, T, Henttinen, K, Dekker, J, Luoto, H, Kulawski, M, Mäkinen, J & Mutikainen, R 2006, 'Silicon-on-insulator wafers with buried cavities', Journal of the Electrochemical Society, vol. 153, no. 4, pp. G299-G303. https://doi.org/10.1149/1.2167955

Silicon-on-insulator wafers with buried cavities. / Suni, Tommi (Corresponding Author); Henttinen, Kimmo; Dekker, James; Luoto, Hannu; Kulawski, Martin; Mäkinen, J.; Mutikainen, R.

In: Journal of the Electrochemical Society, Vol. 153, No. 4, 2006, p. G299-G303.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Silicon-on-insulator wafers with buried cavities

AU - Suni, Tommi

AU - Henttinen, Kimmo

AU - Dekker, James

AU - Luoto, Hannu

AU - Kulawski, Martin

AU - Mäkinen, J.

AU - Mutikainen, R.

PY - 2006

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N2 - Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of silicon-on-insulator (SOI) wafers with buried cavities. The thin Si diaphragm over the cavity is deflected downward during the grinding and polishing, as the thinning is carried out without supporting the diaphragm. The deflection causes thickness variation for the Si diaphragm that can also be observed as a hill on the wafer surface after thinning. The results show that the thickness variation of the Si diaphragm increases with increasing cavity size and with decreasing SOI layer thickness. After grinding the measured hill height was about 1.5 μm for a 20-μm -thick Si diaphragm over a 1×1 mm cavity. The hill height was reduced to less than 0.5 μm when a small supporting column was placed under the diaphragm. With polishing the hill height was further reduced to <0.1 μm. It appears that mechanical thinning of the bonded wafers with pre-etched cavities is a viable method for various applications.

AB - Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of silicon-on-insulator (SOI) wafers with buried cavities. The thin Si diaphragm over the cavity is deflected downward during the grinding and polishing, as the thinning is carried out without supporting the diaphragm. The deflection causes thickness variation for the Si diaphragm that can also be observed as a hill on the wafer surface after thinning. The results show that the thickness variation of the Si diaphragm increases with increasing cavity size and with decreasing SOI layer thickness. After grinding the measured hill height was about 1.5 μm for a 20-μm -thick Si diaphragm over a 1×1 mm cavity. The hill height was reduced to less than 0.5 μm when a small supporting column was placed under the diaphragm. With polishing the hill height was further reduced to <0.1 μm. It appears that mechanical thinning of the bonded wafers with pre-etched cavities is a viable method for various applications.

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Suni T, Henttinen K, Dekker J, Luoto H, Kulawski M, Mäkinen J et al. Silicon-on-insulator wafers with buried cavities. Journal of the Electrochemical Society. 2006;153(4):G299-G303. https://doi.org/10.1149/1.2167955