Abstract
| Original language | English |
|---|---|
| Pages (from-to) | G299-G303 |
| Number of pages | 5 |
| Journal | Journal of the Electrochemical Society |
| Volume | 153 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2006 |
| MoE publication type | A1 Journal article-refereed |
Fingerprint
Keywords
- Wafer bonding
- SOI
- MEMS
- direct bonding
Cite this
}
Silicon-on-insulator wafers with buried cavities. / Suni, Tommi (Corresponding Author); Henttinen, Kimmo; Dekker, James; Luoto, Hannu; Kulawski, Martin; Mäkinen, J.; Mutikainen, R.
In: Journal of the Electrochemical Society, Vol. 153, No. 4, 2006, p. G299-G303.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Silicon-on-insulator wafers with buried cavities
AU - Suni, Tommi
AU - Henttinen, Kimmo
AU - Dekker, James
AU - Luoto, Hannu
AU - Kulawski, Martin
AU - Mäkinen, J.
AU - Mutikainen, R.
PY - 2006
Y1 - 2006
N2 - Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of silicon-on-insulator (SOI) wafers with buried cavities. The thin Si diaphragm over the cavity is deflected downward during the grinding and polishing, as the thinning is carried out without supporting the diaphragm. The deflection causes thickness variation for the Si diaphragm that can also be observed as a hill on the wafer surface after thinning. The results show that the thickness variation of the Si diaphragm increases with increasing cavity size and with decreasing SOI layer thickness. After grinding the measured hill height was about 1.5 μm for a 20-μm -thick Si diaphragm over a 1×1 mm cavity. The hill height was reduced to less than 0.5 μm when a small supporting column was placed under the diaphragm. With polishing the hill height was further reduced to <0.1 μm. It appears that mechanical thinning of the bonded wafers with pre-etched cavities is a viable method for various applications.
AB - Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of silicon-on-insulator (SOI) wafers with buried cavities. The thin Si diaphragm over the cavity is deflected downward during the grinding and polishing, as the thinning is carried out without supporting the diaphragm. The deflection causes thickness variation for the Si diaphragm that can also be observed as a hill on the wafer surface after thinning. The results show that the thickness variation of the Si diaphragm increases with increasing cavity size and with decreasing SOI layer thickness. After grinding the measured hill height was about 1.5 μm for a 20-μm -thick Si diaphragm over a 1×1 mm cavity. The hill height was reduced to less than 0.5 μm when a small supporting column was placed under the diaphragm. With polishing the hill height was further reduced to <0.1 μm. It appears that mechanical thinning of the bonded wafers with pre-etched cavities is a viable method for various applications.
KW - Wafer bonding
KW - SOI
KW - MEMS
KW - direct bonding
U2 - 10.1149/1.2167955
DO - 10.1149/1.2167955
M3 - Article
VL - 153
SP - G299-G303
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 4
ER -