Silicon quantum point contact with aluminum gate

Mika Prunnila (Corresponding Author), Simo Eränen, Jouni Ahopelto, A. Manninen, M. Kamp, M. Emmerling, A. Forchel, A. Kristensen, B. Sorensen, P. Lindelof, A. Gustafsson

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    2 Citations (Scopus)

    Abstract

    Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.

    Original languageEnglish
    Pages (from-to)193 - 196
    Number of pages4
    JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
    Volume74
    Issue number1-3
    DOIs
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

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    Prunnila, M., Eränen, S., Ahopelto, J., Manninen, A., Kamp, M., Emmerling, M., Forchel, A., Kristensen, A., Sorensen, B., Lindelof, P., & Gustafsson, A. (2000). Silicon quantum point contact with aluminum gate. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 74(1-3), 193 - 196. https://doi.org/10.1016/S0921-5107(99)00560-7