Silicon quantum point contact with aluminum gate

Mika Prunnila; Simo Eränen; Jouni Ahopelto; Antti Manninen; M. Kamp; M. Emmerling; A. Forchel; A. Kristensen; B. Sorensen; P. Lindelof; A. Gustafsson

doi:10.1016/S0921-5107(99)00560-7

Silicon quantum point contact with aluminum gate

Mika Prunnila (Corresponding Author), Simo Eränen, Jouni Ahopelto, Antti Manninen, M. Kamp, M. Emmerling, A. Forchel, A. Kristensen, B. Sorensen, P. Lindelof, A. Gustafsson

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm² Vs⁻¹ is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.

Original language	English
Pages (from-to)	193-196
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	74
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(99)00560-7
Publication status	Published - 2000
MoE publication type	A1 Journal article-refereed

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title = "Silicon quantum point contact with aluminum gate",

abstract = "Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.",

author = "Mika Prunnila and Simo Er{\"a}nen and Jouni Ahopelto and Antti Manninen and M. Kamp and M. Emmerling and A. Forchel and A. Kristensen and B. Sorensen and P. Lindelof and A. Gustafsson",

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doi = "10.1016/S0921-5107(99)00560-7",

language = "English",

volume = "74",

pages = "193--196",

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TY - JOUR

T1 - Silicon quantum point contact with aluminum gate

AU - Prunnila, Mika

AU - Eränen, Simo

AU - Ahopelto, Jouni

AU - Manninen, Antti

AU - Kamp, M.

AU - Emmerling, M.

AU - Forchel, A.

AU - Kristensen, A.

AU - Sorensen, B.

AU - Lindelof, P.

AU - Gustafsson, A.

PY - 2000

Y1 - 2000

N2 - Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.

AB - Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.

U2 - 10.1016/S0921-5107(99)00560-7

DO - 10.1016/S0921-5107(99)00560-7

M3 - Article

SN - 0921-5107

VL - 74

SP - 193

EP - 196

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Silicon quantum point contact with aluminum gate

Abstract

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