Silicon quantum point contact with aluminum gate

Mika Prunnila (Corresponding Author), Simo Eränen, Jouni Ahopelto, A. Manninen, M. Kamp, M. Emmerling, A. Forchel, A. Kristensen, B. Sorensen, P. Lindelof, A. Gustafsson

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.

Original languageEnglish
Pages (from-to)193 - 196
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume74
Issue number1-3
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

Fingerprint

Point contacts
Silicon
Aluminum
aluminum
silicon
insulators
phase coherence
estimates
Lithography
constrictions
CMOS
Electric properties
lithography
electrical properties
atomic force microscopy
wafers
Transmission electron microscopy
Fabrication
transmission electron microscopy
fabrication

Cite this

Prunnila, Mika ; Eränen, Simo ; Ahopelto, Jouni ; Manninen, A. ; Kamp, M. ; Emmerling, M. ; Forchel, A. ; Kristensen, A. ; Sorensen, B. ; Lindelof, P. ; Gustafsson, A. / Silicon quantum point contact with aluminum gate. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2000 ; Vol. 74, No. 1-3. pp. 193 - 196.
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title = "Silicon quantum point contact with aluminum gate",
abstract = "Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.",
author = "Mika Prunnila and Simo Er{\"a}nen and Jouni Ahopelto and A. Manninen and M. Kamp and M. Emmerling and A. Forchel and A. Kristensen and B. Sorensen and P. Lindelof and A. Gustafsson",
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Prunnila, M, Eränen, S, Ahopelto, J, Manninen, A, Kamp, M, Emmerling, M, Forchel, A, Kristensen, A, Sorensen, B, Lindelof, P & Gustafsson, A 2000, 'Silicon quantum point contact with aluminum gate', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 74, no. 1-3, pp. 193 - 196. https://doi.org/10.1016/S0921-5107(99)00560-7

Silicon quantum point contact with aluminum gate. / Prunnila, Mika (Corresponding Author); Eränen, Simo; Ahopelto, Jouni; Manninen, A.; Kamp, M.; Emmerling, M.; Forchel, A.; Kristensen, A.; Sorensen, B.; Lindelof, P.; Gustafsson, A.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 74, No. 1-3, 2000, p. 193 - 196.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Silicon quantum point contact with aluminum gate

AU - Prunnila, Mika

AU - Eränen, Simo

AU - Ahopelto, Jouni

AU - Manninen, A.

AU - Kamp, M.

AU - Emmerling, M.

AU - Forchel, A.

AU - Kristensen, A.

AU - Sorensen, B.

AU - Lindelof, P.

AU - Gustafsson, A.

PY - 2000

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N2 - Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.

AB - Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.

U2 - 10.1016/S0921-5107(99)00560-7

DO - 10.1016/S0921-5107(99)00560-7

M3 - Article

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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