Abstract
VTT has two decades experience on the manufacturing and design of the
silicon radiation detectors. The activities cover a range of industrial
devices as well as the devices for the physics experiments. The paper gives an
overview on the new solid state detector development activity at VTT that
comprise advanced X-ray photo diodes, through wafer interconnections for the
photo diode arrays, thin silicon strip detectors, active-edge strip and pixel
detectors with different biasing schemes, and full 3D 1 mm thick active edge
silicon detectors.
Original language | English |
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Title of host publication | Proceedings |
Subtitle of host publication | IEEE Nuclear Science Symposium and Medical Imagine Conference, NSS-MIC 2007 |
Place of Publication | Piscataway, NJ, USA |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 1494-1497 |
ISBN (Print) | 978-1-4244-0922-8, 978-1-4244-0923-5 |
DOIs | |
Publication status | Published - 2007 |
MoE publication type | A4 Article in a conference publication |
Event | IEEE Nuclear Science Symposium and Medical Imagine Conference, NSS-MIC 2007 - Honolulu, HI, United States Duration: 26 Oct 2007 → 3 Nov 2007 |
Conference
Conference | IEEE Nuclear Science Symposium and Medical Imagine Conference, NSS-MIC 2007 |
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Abbreviated title | NSS-MIC 2007 |
Country/Territory | United States |
City | Honolulu, HI |
Period | 26/10/07 → 3/11/07 |
Keywords
- Neutral particle analyzer
- X-ray photo diode
- silicon-on-insulator
- thin silicon detector
- active-edge silicon detector
- 3D detector
- through wafer interconnection