Abstract
The paper describes the first results on the behavior of
semi three dimensional (3D) silicon radiation detectors.
As compared to the normal 3D detectors with the n- and
p-type vertical doping profiles, the present structure
employs the p-type profiles, only. The report covers the
proposed new structure, fabrication sequence, the
electrical characteristics like the capacitance, leakage
current, breakdown voltage, x-ray response for the
Am-source. These results are reported for the high
resistivity Cz and FZ starting material. The measured
electrical characteristics are compared with the 3D
simulation results obtained with the ISE TCAD software.
In addition, the 3D mixed mode transient simulations are
employed in order to learn about the signal charge
collection capabilities of the new structure.
Original language | English |
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Title of host publication | IEEE Nuclear Science Symposium Conference Record 2004 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 1231-1235 |
Volume | 2 |
ISBN (Electronic) | 0-7803-8701-5 |
ISBN (Print) | 0-7803-8700-7 |
DOIs | |
Publication status | Published - 2005 |
MoE publication type | A4 Article in a conference publication |
Event | IEEE Symposium Conference Record Nuclear Science 2004 - Rome, Italy Duration: 16 Aug 2004 → 22 Aug 2004 |
Conference
Conference | IEEE Symposium Conference Record Nuclear Science 2004 |
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Country/Territory | Italy |
City | Rome |
Period | 16/08/04 → 22/08/04 |
Keywords
- X-ray apparatus
- X-ray detection
- silicon radiation detectors
- capacitance
- electrical characteristics
- high resistivity Cz starting material
- high resistivity FZ starting material
- leakage current
- n-type vertical doping profile
- p-type vertical doping profile
- signal charge collection
- silicon semithree-dimensional radiation detectors
- ISE TCAD software