Silicon semi 3D radiation detectors

Simo Eränen, Tuula Virolainen, Ismo Luusua, Juha Kalliopuska, K. Kurvinen, M. Eräluoto, J. Härkönen, K. Leinonen, M. Palviainen, M. Koski

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)


The paper describes the first results on the behavior of semi three dimensional (3D) silicon radiation detectors. As compared to the normal 3D detectors with the n- and p-type vertical doping profiles, the present structure employs the p-type profiles, only. The report covers the proposed new structure, fabrication sequence, the electrical characteristics like the capacitance, leakage current, breakdown voltage, x-ray response for the Am-source. These results are reported for the high resistivity Cz and FZ starting material. The measured electrical characteristics are compared with the 3D simulation results obtained with the ISE TCAD software. In addition, the 3D mixed mode transient simulations are employed in order to learn about the signal charge collection capabilities of the new structure.
Original languageEnglish
Title of host publicationIEEE Nuclear Science Symposium Conference Record 2004
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Electronic)0-7803-8701-5
ISBN (Print)0-7803-8700-7
Publication statusPublished - 2005
MoE publication typeA4 Article in a conference publication
EventIEEE Symposium Conference Record Nuclear Science 2004 - Rome, Italy
Duration: 16 Aug 200422 Aug 2004


ConferenceIEEE Symposium Conference Record Nuclear Science 2004


  • X-ray apparatus
  • X-ray detection
  • silicon radiation detectors
  • capacitance
  • electrical characteristics
  • high resistivity Cz starting material
  • high resistivity FZ starting material
  • leakage current
  • n-type vertical doping profile
  • p-type vertical doping profile
  • signal charge collection
  • silicon semithree-dimensional radiation detectors
  • ISE TCAD software


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