Silicon single electron transistors with single and multi dot characteristics

Alexander Savin, Antti Manninen, Jari Kauranen, Jukka Pekola, Mika Prunnila, Jouni Ahopelto, Martin Kamp, Monica Emmerling, Alfred Forchel

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    Silicon single electron transistors (SET) with side gate have been fabricated on a heavily doped silicon-on-insulator (SOI) substrate. Samples demonstrate two types of characteristics: some of them demonstrate multiple dot behavior and one demonstrates single dot behavior in a wide temperature range. SETs demonstrate oscillations of drain-source current and changes in the width of the Coulomb blockade region with change of gate voltage at least up to 100 K. At temperature below 20 K long-term oscillations (relaxation) of source-drain current after switching the gate voltage has been observed in both multiple dot and single dot samples. Illumination affects both the characteristics of the SETs and the relaxation process. Telegraph noise has been observed in a definite range of source-drain and gate voltages.
    Original languageEnglish
    Title of host publicationSymposium F
    Subtitle of host publicationMicrocrystaline & Nanocrystalline Semiconductors 2000
    PublisherMaterials Research Society
    PagesF1.3.1-F1.3.6
    DOIs
    Publication statusPublished - 2000
    MoE publication typeA4 Article in a conference publication
    Event2000 MRS Fall Meeting: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 - Boston, United States
    Duration: 27 Nov 20001 Dec 2000

    Publication series

    SeriesMaterials Research Society Symposia Proceedings
    Volume638
    ISSN0272-9172

    Conference

    Conference2000 MRS Fall Meeting
    CountryUnited States
    CityBoston
    Period27/11/001/12/00

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