Simple analytical model for power DMOS transistors

Pekka Kuivalainen, Marko Grönlund, Hannu Ronkainen

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used
    Original languageEnglish
    Pages (from-to)187-188
    JournalElectronics Letters
    Volume28
    Issue number2
    DOIs
    Publication statusPublished - 1992
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Analytical models
    Heating
    Degradation
    Electric potential
    Power transistors
    Voltage drop

    Cite this

    Kuivalainen, Pekka ; Grönlund, Marko ; Ronkainen, Hannu. / Simple analytical model for power DMOS transistors. In: Electronics Letters. 1992 ; Vol. 28, No. 2. pp. 187-188.
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    title = "Simple analytical model for power DMOS transistors",
    abstract = "A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used",
    author = "Pekka Kuivalainen and Marko Gr{\"o}nlund and Hannu Ronkainen",
    note = "Project code: PUO1008",
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    doi = "10.1049/el:19920116",
    language = "English",
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    Simple analytical model for power DMOS transistors. / Kuivalainen, Pekka; Grönlund, Marko; Ronkainen, Hannu.

    In: Electronics Letters, Vol. 28, No. 2, 1992, p. 187-188.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Simple analytical model for power DMOS transistors

    AU - Kuivalainen, Pekka

    AU - Grönlund, Marko

    AU - Ronkainen, Hannu

    N1 - Project code: PUO1008

    PY - 1992

    Y1 - 1992

    N2 - A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used

    AB - A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used

    U2 - 10.1049/el:19920116

    DO - 10.1049/el:19920116

    M3 - Article

    VL - 28

    SP - 187

    EP - 188

    JO - Electronics Letters

    JF - Electronics Letters

    SN - 0013-5194

    IS - 2

    ER -