Simple analytical model for power DMOS transistors

Pekka Kuivalainen, Marko Grönlund, Hannu Ronkainen

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used
    Original languageEnglish
    Pages (from-to)187-188
    JournalElectronics Letters
    Volume28
    Issue number2
    DOIs
    Publication statusPublished - 1992
    MoE publication typeA1 Journal article-refereed

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