Abstract
A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used
Original language | English |
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Pages (from-to) | 187-188 |
Journal | Electronics Letters |
Volume | 28 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1992 |
MoE publication type | A1 Journal article-refereed |