Simple analytical model for power DMOS transistors

Pekka Kuivalainen, Marko Grönlund, Hannu Ronkainen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used
Original languageEnglish
Pages (from-to)187-188
JournalElectronics Letters
Volume28
Issue number2
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

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Analytical models
Heating
Degradation
Electric potential
Power transistors
Voltage drop

Cite this

Kuivalainen, Pekka ; Grönlund, Marko ; Ronkainen, Hannu. / Simple analytical model for power DMOS transistors. In: Electronics Letters. 1992 ; Vol. 28, No. 2. pp. 187-188.
@article{6d6dd7508b224cd296ce3c80d8621cb1,
title = "Simple analytical model for power DMOS transistors",
abstract = "A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used",
author = "Pekka Kuivalainen and Marko Gr{\"o}nlund and Hannu Ronkainen",
note = "Project code: PUO1008",
year = "1992",
doi = "10.1049/el:19920116",
language = "English",
volume = "28",
pages = "187--188",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology IET",
number = "2",

}

Simple analytical model for power DMOS transistors. / Kuivalainen, Pekka; Grönlund, Marko; Ronkainen, Hannu.

In: Electronics Letters, Vol. 28, No. 2, 1992, p. 187-188.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Simple analytical model for power DMOS transistors

AU - Kuivalainen, Pekka

AU - Grönlund, Marko

AU - Ronkainen, Hannu

N1 - Project code: PUO1008

PY - 1992

Y1 - 1992

N2 - A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used

AB - A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used

U2 - 10.1049/el:19920116

DO - 10.1049/el:19920116

M3 - Article

VL - 28

SP - 187

EP - 188

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 2

ER -