Simple analytical model for power DMOS transistors

Pekka Kuivalainen; Marko Grönlund; Hannu Ronkainen

doi:10.1049/el:19920116

Simple analytical model for power DMOS transistors

Pekka Kuivalainen
, Marko Grönlund
, Hannu Ronkainen

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used

Original language	English
Pages (from-to)	187-188
Journal	Electronics Letters
Volume	28
Issue number	2
DOIs	https://doi.org/10.1049/el:19920116
Publication status	Published - 1992
MoE publication type	A1 Journal article-refereed

Access to Document

10.1049/el:19920116

Cite this

@article{6d6dd7508b224cd296ce3c80d8621cb1,

title = "Simple analytical model for power DMOS transistors",

abstract = "A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used",

author = "Pekka Kuivalainen and Marko Gr{\"o}nlund and Hannu Ronkainen",

note = "Project code: PUO1008",

year = "1992",

doi = "10.1049/el:19920116",

language = "English",

volume = "28",

pages = "187--188",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Wiley",

number = "2",

}

TY - JOUR

T1 - Simple analytical model for power DMOS transistors

AU - Kuivalainen, Pekka

AU - Grönlund, Marko

AU - Ronkainen, Hannu

N1 - Project code: PUO1008

PY - 1992

Y1 - 1992

N2 - A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used

AB - A simple analytical DC model has been developed for power DMOS transistors in a strong inversion. The model takes into account some special features of the new short channel DMOSTs such as local heating effects, a large voltage drop in the drift region and a mobility degradation at large drain source voltages. The model provides a good agreement with the measured data even when only a small number of fitting parameters are used

U2 - 10.1049/el:19920116

DO - 10.1049/el:19920116

M3 - Article

SN - 0013-5194

VL - 28

SP - 187

EP - 188

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

Simple analytical model for power DMOS transistors

Abstract

Access to Document

Fingerprint

Cite this