Simulation and modeling of self-switching devices

Markku Åberg (Corresponding Author), Jan Saijets, Aimin Song, Mika Prunnila

Research output: Contribution to journalArticleScientificpeer-review

29 Citations (Scopus)

Abstract

A new type of nanometer scale nonlinear device, called self-switching device (SSD) is realized by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a strongly nonlinear I-V characteristic, resembling that of a conventional diode. Because the structure resembles a diode-connected FET (gate and drain shorted), we have modeled the device as a sideways turned FET, so that the trench width t corresponds to insulator thickness tox and conducting layer thickness Z (inside the semiconductor!) corresponds to channel width W.
Original languageEnglish
Pages (from-to)123 - 126
Number of pages4
JournalPhysica Scripta
VolumeT114
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed
Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
Duration: 25 Aug 200327 Aug 2003

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Modeling and Simulation
Diode
Semiconductors
field effect transistors
simulation
Insulator
diodes
Voltage
Symmetry
insulators
conduction
electric potential
symmetry
profiles
Profile

Cite this

Åberg, Markku ; Saijets, Jan ; Song, Aimin ; Prunnila, Mika. / Simulation and modeling of self-switching devices. In: Physica Scripta. 2004 ; Vol. T114. pp. 123 - 126.
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Simulation and modeling of self-switching devices. / Åberg, Markku (Corresponding Author); Saijets, Jan; Song, Aimin; Prunnila, Mika.

In: Physica Scripta, Vol. T114, 2004, p. 123 - 126.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Simulation and modeling of self-switching devices

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AU - Saijets, Jan

AU - Song, Aimin

AU - Prunnila, Mika

N1 - Project code: T2SU00015

PY - 2004

Y1 - 2004

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U2 - 10.1088/0031-8949/2004/T114/031

DO - 10.1088/0031-8949/2004/T114/031

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