Simulation and modeling of self-switching devices

Markku Åberg (Corresponding Author), Jan Saijets, Aimin Song, Mika Prunnila

    Research output: Contribution to journalArticleScientificpeer-review

    30 Citations (Scopus)

    Abstract

    A new type of nanometer scale nonlinear device, called self-switching device (SSD) is realized by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a strongly nonlinear I-V characteristic, resembling that of a conventional diode. Because the structure resembles a diode-connected FET (gate and drain shorted), we have modeled the device as a sideways turned FET, so that the trench width t corresponds to insulator thickness tox and conducting layer thickness Z (inside the semiconductor!) corresponds to channel width W.
    Original languageEnglish
    Pages (from-to)123 - 126
    Number of pages4
    JournalPhysica Scripta
    VolumeT114
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed
    Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
    Duration: 25 Aug 200327 Aug 2003

    Fingerprint Dive into the research topics of 'Simulation and modeling of self-switching devices'. Together they form a unique fingerprint.

  • Cite this