A new type of nanometer scale nonlinear device, called self-switching device (SSD) is realized by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a strongly nonlinear I-V characteristic, resembling that of a conventional diode. Because the structure resembles a diode-connected FET (gate and drain shorted), we have modeled the device as a sideways turned FET, so that the trench width t corresponds to insulator thickness tox and conducting layer thickness Z (inside the semiconductor!) corresponds to channel width W.
|Pages (from-to)||123 - 126|
|Number of pages||4|
|Publication status||Published - 2004|
|MoE publication type||A1 Journal article-refereed|
|Event||20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland|
Duration: 25 Aug 2003 → 27 Aug 2003