Simulation and modeling of self-switching devices

Markku Åberg (Corresponding Author), Jan Saijets, Aimin Song, Mika Prunnila

    Research output: Contribution to journalArticleScientificpeer-review

    30 Citations (Scopus)

    Abstract

    A new type of nanometer scale nonlinear device, called self-switching device (SSD) is realized by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a strongly nonlinear I-V characteristic, resembling that of a conventional diode. Because the structure resembles a diode-connected FET (gate and drain shorted), we have modeled the device as a sideways turned FET, so that the trench width t corresponds to insulator thickness tox and conducting layer thickness Z (inside the semiconductor!) corresponds to channel width W.
    Original languageEnglish
    Pages (from-to)123 - 126
    Number of pages4
    JournalPhysica Scripta
    VolumeT114
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed
    Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
    Duration: 25 Aug 200327 Aug 2003

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    Modeling and Simulation
    Diode
    Semiconductors
    field effect transistors
    simulation
    Insulator
    diodes
    Voltage
    Symmetry
    insulators
    conduction
    electric potential
    symmetry
    profiles
    Profile

    Cite this

    Åberg, Markku ; Saijets, Jan ; Song, Aimin ; Prunnila, Mika. / Simulation and modeling of self-switching devices. In: Physica Scripta. 2004 ; Vol. T114. pp. 123 - 126.
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    Simulation and modeling of self-switching devices. / Åberg, Markku (Corresponding Author); Saijets, Jan; Song, Aimin; Prunnila, Mika.

    In: Physica Scripta, Vol. T114, 2004, p. 123 - 126.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Simulation and modeling of self-switching devices

    AU - Åberg, Markku

    AU - Saijets, Jan

    AU - Song, Aimin

    AU - Prunnila, Mika

    N1 - Project code: T2SU00015

    PY - 2004

    Y1 - 2004

    N2 - A new type of nanometer scale nonlinear device, called self-switching device (SSD) is realized by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a strongly nonlinear I-V characteristic, resembling that of a conventional diode. Because the structure resembles a diode-connected FET (gate and drain shorted), we have modeled the device as a sideways turned FET, so that the trench width t corresponds to insulator thickness tox and conducting layer thickness Z (inside the semiconductor!) corresponds to channel width W.

    AB - A new type of nanometer scale nonlinear device, called self-switching device (SSD) is realized by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a strongly nonlinear I-V characteristic, resembling that of a conventional diode. Because the structure resembles a diode-connected FET (gate and drain shorted), we have modeled the device as a sideways turned FET, so that the trench width t corresponds to insulator thickness tox and conducting layer thickness Z (inside the semiconductor!) corresponds to channel width W.

    U2 - 10.1088/0031-8949/2004/T114/031

    DO - 10.1088/0031-8949/2004/T114/031

    M3 - Article

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    SP - 123

    EP - 126

    JO - Physica Scripta

    JF - Physica Scripta

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