Simulation and modeling of self-switching devices

Keyphrases

• Applied Voltage 50%
• Channel Direction 50%
• Channel Width 50%
• Conducting Layer 50%
• Diode 100%
• Effective Channel Width 50%
• I-V Curve 50%
• Insulator Thickness 50%
• Layer Thickness 50%
• Nanometer Scale 50%
• Nonlinear Devices 50%
• Potential Profile 50%
• Self-switching Device 100%
• Semiconductors 100%
• Strongly Nonlinear 50%

INIS

• devices 100%
• i-v characteristic 25%
• layers 25%
• modeling 100%
• nonlinear problems 50%
• semiconductor materials 50%
• simulation 100%
• symmetry 25%
• thickness 50%
• voltage 25%
• width 75%

Engineering

• Applied Voltage 50%
• Current-Voltage Characteristic 50%
• Effective Channel 50%
• Field Effect Transistors 100%
• Layer Thickness 50%
• Nanometre 50%
• Nonlinear Device 50%