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Simulations on the electrical characteristics of Si, SiC and diamond junction and Schottky power diodes
Simo Eränen
, Kaj Grahn
, Pekka Kuivalainen
VTT Technical Research Centre of Finland
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Book/Report
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Report
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INIS
simulation
100%
diamonds
100%
power
100%
silicon carbides
100%
junctions
100%
comparative evaluations
50%
devices
50%
silicon
50%
voltage
50%
breakdown
50%
electrons
25%
direct current
25%
holes
25%
poisson equation
25%
schottky barrier diodes
25%
continuity equations
25%
hydrogen 6
25%
junction diodes
25%
Engineering
Diamond
100%
Breakdown Voltage
50%
Simulation Program
25%
Power Structure
25%
Direct Current
25%
Material Science
Diamond
100%
Silicon
50%
Schottky Diode
25%
Physics
Continuity Equation
100%
Keyphrases
SiC Diode
33%
6H-SiC
33%
Current Continuity
33%