Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation

Mikael Andersson; Markku Åberg; Helena Pohjonen

doi:10.1109/ISCAS.1988.15474

Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation

Mikael Andersson, Markku Åberg, Helena Pohjonen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

The authors have developed a method for extracting the channel and gate diode parameters for a GaAs MESFET simultaneously from a single set of measurement data. The method has been applied in comparing nonirradiated and irradiated devices and could be useful in predicting the maximum integration level of GaAs circuits designed to operate under harsh conditions, like radiation. It is especially suitable for digital circuit applications based on GaAs E/D- (enhancement/depletion) and D-MESFET technologies, because of the limited number of MESFETs with different geometries. The procedure has been applied to the extraction of model parameters for gamma- and neutron-irradiated MESFETs, and the results have been compared, used circuit simulation.

Original language	English
Title of host publication	1988 IEEE International Symposium on Circuits and Systems
Place of Publication	Espoo
Publisher	IEEE Institute of Electrical and Electronic Engineers
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.1988.15474
Publication status	Published - 1988
MoE publication type	A4 Article in a conference publication
Event	IEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88 - Espoo, Finland Duration: 6 Jun 1988 → 9 Jun 1988

Conference

Conference	IEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88
Country/Territory	Finland
City	Espoo
Period	6/06/88 → 9/06/88

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10.1109/ISCAS.1988.15474

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@inproceedings{a09896687f8342ef83b4f09dbc58f8d8,

title = "Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation",

abstract = "The authors have developed a method for extracting the channel and gate diode parameters for a GaAs MESFET simultaneously from a single set of measurement data. The method has been applied in comparing nonirradiated and irradiated devices and could be useful in predicting the maximum integration level of GaAs circuits designed to operate under harsh conditions, like radiation. It is especially suitable for digital circuit applications based on GaAs E/D- (enhancement/depletion) and D-MESFET technologies, because of the limited number of MESFETs with different geometries. The procedure has been applied to the extraction of model parameters for gamma- and neutron-irradiated MESFETs, and the results have been compared, used circuit simulation.",

author = "Mikael Andersson and Markku {\AA}berg and Helena Pohjonen",

year = "1988",

doi = "10.1109/ISCAS.1988.15474",

language = "English",

booktitle = "1988 IEEE International Symposium on Circuits and Systems",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "IEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88 ; Conference date: 06-06-1988 Through 09-06-1988",

}

Andersson, M, Åberg, M & Pohjonen, H 1988, Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation. in 1988 IEEE International Symposium on Circuits and Systems. IEEE Institute of Electrical and Electronic Engineers, Espoo, IEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88, Espoo, Finland, 6/06/88. https://doi.org/10.1109/ISCAS.1988.15474

Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation. / Andersson, Mikael; Åberg, Markku; Pohjonen, Helena.
1988 IEEE International Symposium on Circuits and Systems. Espoo: IEEE Institute of Electrical and Electronic Engineers, 1988.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation

AU - Andersson, Mikael

AU - Åberg, Markku

AU - Pohjonen, Helena

PY - 1988

Y1 - 1988

N2 - The authors have developed a method for extracting the channel and gate diode parameters for a GaAs MESFET simultaneously from a single set of measurement data. The method has been applied in comparing nonirradiated and irradiated devices and could be useful in predicting the maximum integration level of GaAs circuits designed to operate under harsh conditions, like radiation. It is especially suitable for digital circuit applications based on GaAs E/D- (enhancement/depletion) and D-MESFET technologies, because of the limited number of MESFETs with different geometries. The procedure has been applied to the extraction of model parameters for gamma- and neutron-irradiated MESFETs, and the results have been compared, used circuit simulation.

AB - The authors have developed a method for extracting the channel and gate diode parameters for a GaAs MESFET simultaneously from a single set of measurement data. The method has been applied in comparing nonirradiated and irradiated devices and could be useful in predicting the maximum integration level of GaAs circuits designed to operate under harsh conditions, like radiation. It is especially suitable for digital circuit applications based on GaAs E/D- (enhancement/depletion) and D-MESFET technologies, because of the limited number of MESFETs with different geometries. The procedure has been applied to the extraction of model parameters for gamma- and neutron-irradiated MESFETs, and the results have been compared, used circuit simulation.

U2 - 10.1109/ISCAS.1988.15474

DO - 10.1109/ISCAS.1988.15474

M3 - Conference article in proceedings

BT - 1988 IEEE International Symposium on Circuits and Systems

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Espoo

T2 - IEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88

Y2 - 6 June 1988 through 9 June 1988

ER -

Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation

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