Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation

Mikael Andersson, Markku Åberg, Helena Pohjonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    The authors have developed a method for extracting the channel and gate diode parameters for a GaAs MESFET simultaneously from a single set of measurement data. The method has been applied in comparing nonirradiated and irradiated devices and could be useful in predicting the maximum integration level of GaAs circuits designed to operate under harsh conditions, like radiation. It is especially suitable for digital circuit applications based on GaAs E/D- (enhancement/depletion) and D-MESFET technologies, because of the limited number of MESFETs with different geometries. The procedure has been applied to the extraction of model parameters for gamma- and neutron-irradiated MESFETs, and the results have been compared, used circuit simulation.
    Original languageEnglish
    Title of host publication1988 IEEE International Symposium on Circuits and Systems
    Place of PublicationEspoo
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Number of pages4
    DOIs
    Publication statusPublished - 1988
    MoE publication typeA4 Article in a conference publication
    EventIEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88 - Espoo, Finland
    Duration: 6 Jun 19889 Jun 1988

    Conference

    ConferenceIEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88
    CountryFinland
    CityEspoo
    Period6/06/889/06/88

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  • Cite this

    Andersson, M., Åberg, M., & Pohjonen, H. (1988). Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation. In 1988 IEEE International Symposium on Circuits and Systems IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ISCAS.1988.15474