Simultaneous measurement of recombination lifetime and surface recombination velocity

Simo Eränen, Martti Blomberg

    Research output: Contribution to journalArticleScientificpeer-review

    15 Citations (Scopus)

    Abstract

    We describe a method to determine the carrier recombination lifetime and surface recombination velocity of semiconductor samples in a single photoconductivity decay measurement. The method is based on the observation of the slope of the photoconductivity signal in the long time scale decay tail in the usual fashion, and, in addition, just after the short laser pulse, which generates the excess carriers. In this article the theory of the measurement and some experimental results on silicon wafers with different surface conditions are presented.
    Original languageEnglish
    Pages (from-to)2372 - 2374
    Number of pages3
    JournalJournal of Applied Physics
    Volume56
    Issue number8
    DOIs
    Publication statusPublished - 1984
    MoE publication typeNot Eligible

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