Simultaneous measurement of recombination lifetime and surface recombination velocity

Simo Eränen, Martti Blomberg

    Research output: Contribution to journalArticleScientificpeer-review

    14 Citations (Scopus)

    Abstract

    We describe a method to determine the carrier recombination lifetime and surface recombination velocity of semiconductor samples in a single photoconductivity decay measurement. The method is based on the observation of the slope of the photoconductivity signal in the long time scale decay tail in the usual fashion, and, in addition, just after the short laser pulse, which generates the excess carriers. In this article the theory of the measurement and some experimental results on silicon wafers with different surface conditions are presented.
    Original languageEnglish
    Pages (from-to)2372 - 2374
    Number of pages3
    JournalJournal of Applied Physics
    Volume56
    Issue number8
    DOIs
    Publication statusPublished - 1984
    MoE publication typeNot Eligible

    Fingerprint

    photoconductivity
    life (durability)
    decay
    wafers
    slopes
    silicon
    pulses
    lasers

    Cite this

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    title = "Simultaneous measurement of recombination lifetime and surface recombination velocity",
    abstract = "We describe a method to determine the carrier recombination lifetime and surface recombination velocity of semiconductor samples in a single photoconductivity decay measurement. The method is based on the observation of the slope of the photoconductivity signal in the long time scale decay tail in the usual fashion, and, in addition, just after the short laser pulse, which generates the excess carriers. In this article the theory of the measurement and some experimental results on silicon wafers with different surface conditions are presented.",
    author = "Simo Er{\"a}nen and Martti Blomberg",
    year = "1984",
    doi = "10.1063/1.334254",
    language = "English",
    volume = "56",
    pages = "2372 -- 2374",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics AIP",
    number = "8",

    }

    Simultaneous measurement of recombination lifetime and surface recombination velocity. / Eränen, Simo; Blomberg, Martti.

    In: Journal of Applied Physics, Vol. 56, No. 8, 1984, p. 2372 - 2374.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Simultaneous measurement of recombination lifetime and surface recombination velocity

    AU - Eränen, Simo

    AU - Blomberg, Martti

    PY - 1984

    Y1 - 1984

    N2 - We describe a method to determine the carrier recombination lifetime and surface recombination velocity of semiconductor samples in a single photoconductivity decay measurement. The method is based on the observation of the slope of the photoconductivity signal in the long time scale decay tail in the usual fashion, and, in addition, just after the short laser pulse, which generates the excess carriers. In this article the theory of the measurement and some experimental results on silicon wafers with different surface conditions are presented.

    AB - We describe a method to determine the carrier recombination lifetime and surface recombination velocity of semiconductor samples in a single photoconductivity decay measurement. The method is based on the observation of the slope of the photoconductivity signal in the long time scale decay tail in the usual fashion, and, in addition, just after the short laser pulse, which generates the excess carriers. In this article the theory of the measurement and some experimental results on silicon wafers with different surface conditions are presented.

    U2 - 10.1063/1.334254

    DO - 10.1063/1.334254

    M3 - Article

    VL - 56

    SP - 2372

    EP - 2374

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 8

    ER -