Simultaneous measurement of recombination lifetime and surface recombination velocity

Simo Eränen, Martti Blomberg

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)

Abstract

We describe a method to determine the carrier recombination lifetime and surface recombination velocity of semiconductor samples in a single photoconductivity decay measurement. The method is based on the observation of the slope of the photoconductivity signal in the long time scale decay tail in the usual fashion, and, in addition, just after the short laser pulse, which generates the excess carriers. In this article the theory of the measurement and some experimental results on silicon wafers with different surface conditions are presented.
Original languageEnglish
Pages (from-to)2372 - 2374
Number of pages3
JournalJournal of Applied Physics
Volume56
Issue number8
DOIs
Publication statusPublished - 1984
MoE publication typeNot Eligible

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photoconductivity
life (durability)
decay
wafers
slopes
silicon
pulses
lasers

Cite this

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title = "Simultaneous measurement of recombination lifetime and surface recombination velocity",
abstract = "We describe a method to determine the carrier recombination lifetime and surface recombination velocity of semiconductor samples in a single photoconductivity decay measurement. The method is based on the observation of the slope of the photoconductivity signal in the long time scale decay tail in the usual fashion, and, in addition, just after the short laser pulse, which generates the excess carriers. In this article the theory of the measurement and some experimental results on silicon wafers with different surface conditions are presented.",
author = "Simo Er{\"a}nen and Martti Blomberg",
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language = "English",
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pages = "2372 -- 2374",
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}

Simultaneous measurement of recombination lifetime and surface recombination velocity. / Eränen, Simo; Blomberg, Martti.

In: Journal of Applied Physics, Vol. 56, No. 8, 1984, p. 2372 - 2374.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Simultaneous measurement of recombination lifetime and surface recombination velocity

AU - Eränen, Simo

AU - Blomberg, Martti

PY - 1984

Y1 - 1984

N2 - We describe a method to determine the carrier recombination lifetime and surface recombination velocity of semiconductor samples in a single photoconductivity decay measurement. The method is based on the observation of the slope of the photoconductivity signal in the long time scale decay tail in the usual fashion, and, in addition, just after the short laser pulse, which generates the excess carriers. In this article the theory of the measurement and some experimental results on silicon wafers with different surface conditions are presented.

AB - We describe a method to determine the carrier recombination lifetime and surface recombination velocity of semiconductor samples in a single photoconductivity decay measurement. The method is based on the observation of the slope of the photoconductivity signal in the long time scale decay tail in the usual fashion, and, in addition, just after the short laser pulse, which generates the excess carriers. In this article the theory of the measurement and some experimental results on silicon wafers with different surface conditions are presented.

U2 - 10.1063/1.334254

DO - 10.1063/1.334254

M3 - Article

VL - 56

SP - 2372

EP - 2374

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -