Single and two sub-band transport in double gated silicon quantum wells

Mika Prunnila, Jani Kivioja, Jani Ahopelto

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

Abstract

Development of silicon-on-insulator (SOI) technology has enabled fabrication of silicon heterostructures, where thin single crystalline Si film is sandwiched between amorphous SiO2 layers. This kind of SiO2-Si-SiO2 quantum well provides a unique material system where electron density can be tuned in a broad range due to high potential barriers formed by the SiO2 layers. In this work we examine gate balance dependency of conductivity of double gated SiO2-Si-SiO2 quantum wells
Original languageEnglish
Title of host publicationProceedings of the XLI Annual Conference of the Finnish Physics Society
PublisherUniversity of Helsinki
Pages175
Number of pages1
ISBN (Print)978-952-10-3236-3
Publication statusPublished - 2007
MoE publication typeNot Eligible
EventPhysics Days - Fysiikan Päivät 2007: 41st annual meeting of the Finnish Physical Society - Tallinn, Estonia
Duration: 15 Mar 200717 Mar 2007
Conference number: 41

Publication series

SeriesUniversity of Helsinki: Department of Physics. Report Series in Physics
NumberHU-P-267
ISSN0355-5801

Conference

ConferencePhysics Days - Fysiikan Päivät 2007
CountryEstonia
CityTallinn
Period15/03/0717/03/07
OtherOrganized together with the Estonian Physical Society

Fingerprint

quantum wells
silicon
insulators
conductivity
fabrication

Keywords

  • silicon-on-insulator

Cite this

Prunnila, M., Kivioja, J., & Ahopelto, J. (2007). Single and two sub-band transport in double gated silicon quantum wells. In Proceedings of the XLI Annual Conference of the Finnish Physics Society (pp. 175). University of Helsinki. University of Helsinki: Department of Physics. Report Series in Physics, No. HU-P-267
Prunnila, Mika ; Kivioja, Jani ; Ahopelto, Jani. / Single and two sub-band transport in double gated silicon quantum wells. Proceedings of the XLI Annual Conference of the Finnish Physics Society. University of Helsinki, 2007. pp. 175 (University of Helsinki: Department of Physics. Report Series in Physics; No. HU-P-267).
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Prunnila, M, Kivioja, J & Ahopelto, J 2007, Single and two sub-band transport in double gated silicon quantum wells. in Proceedings of the XLI Annual Conference of the Finnish Physics Society. University of Helsinki, University of Helsinki: Department of Physics. Report Series in Physics, no. HU-P-267, pp. 175, Physics Days - Fysiikan Päivät 2007, Tallinn, Estonia, 15/03/07.

Single and two sub-band transport in double gated silicon quantum wells. / Prunnila, Mika; Kivioja, Jani; Ahopelto, Jani.

Proceedings of the XLI Annual Conference of the Finnish Physics Society. University of Helsinki, 2007. p. 175 (University of Helsinki: Department of Physics. Report Series in Physics; No. HU-P-267).

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

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Prunnila M, Kivioja J, Ahopelto J. Single and two sub-band transport in double gated silicon quantum wells. In Proceedings of the XLI Annual Conference of the Finnish Physics Society. University of Helsinki. 2007. p. 175. (University of Helsinki: Department of Physics. Report Series in Physics; No. HU-P-267).