Single and two sub-band transport in double gated silicon quantum wells

Mika Prunnila, Jani Kivioja, Jani Ahopelto

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

    Abstract

    Development of silicon-on-insulator (SOI) technology has enabled fabrication of silicon heterostructures, where thin single crystalline Si film is sandwiched between amorphous SiO2 layers. This kind of SiO2-Si-SiO2 quantum well provides a unique material system where electron density can be tuned in a broad range due to high potential barriers formed by the SiO2 layers. In this work we examine gate balance dependency of conductivity of double gated SiO2-Si-SiO2 quantum wells
    Original languageEnglish
    Title of host publicationProceedings of the XLI Annual Conference of the Finnish Physics Society
    PublisherUniversity of Helsinki
    Pages175
    Number of pages1
    ISBN (Print)978-952-10-3236-3
    Publication statusPublished - 2007
    MoE publication typeNot Eligible
    EventPhysics Days - Fysiikan Päivät 2007: 41st annual meeting of the Finnish Physical Society - Tallinn, Estonia
    Duration: 15 Mar 200717 Mar 2007
    Conference number: 41

    Publication series

    SeriesUniversity of Helsinki: Department of Physics. Report Series in Physics
    NumberHU-P-267
    ISSN0355-5801

    Conference

    ConferencePhysics Days - Fysiikan Päivät 2007
    CountryEstonia
    CityTallinn
    Period15/03/0717/03/07
    OtherOrganized together with the Estonian Physical Society

    Keywords

    • silicon-on-insulator

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