Single and two sub-band transport in double gated silicon quantum wells

Mika Prunnila; Jani Kivioja; Jani Ahopelto

Single and two sub-band transport in double gated silicon quantum wells

Mika Prunnila
, Jani Kivioja
, Jani Ahopelto

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Scientific

Abstract

Development of silicon-on-insulator (SOI) technology has enabled fabrication of silicon heterostructures, where thin single crystalline Si film is sandwiched between amorphous SiO2 layers. This kind of SiO2-Si-SiO2 quantum well provides a unique material system where electron density can be tuned in a broad range due to high potential barriers formed by the SiO2 layers. In this work we examine gate balance dependency of conductivity of double gated SiO2-Si-SiO2 quantum wells

Original language	English
Title of host publication	Proceedings of the XLI Annual Conference of the Finnish Physics Society
Publisher	University of Helsinki
Pages	175
Number of pages	1
ISBN (Print)	978-952-10-3236-3
Publication status	Published - 2007
MoE publication type	Not Eligible
Event	Physics Days - Fysiikan Päivät 2007: 41st annual meeting of the Finnish Physical Society - Tallinn, Estonia Duration: 15 Mar 2007 → 17 Mar 2007 Conference number: 41

Publication series

Series	University of Helsinki: Department of Physics. Report Series in Physics
Number	HU-P-267
ISSN	0355-5801

Conference

Conference	Physics Days - Fysiikan Päivät 2007
Country/Territory	Estonia
City	Tallinn
Period	15/03/07 → 17/03/07
Other	Organized together with the Estonian Physical Society

Keywords

silicon-on-insulator

Cite this

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abstract = "Development of silicon-on-insulator (SOI) technology has enabled fabrication of silicon heterostructures, where thin single crystalline Si film is sandwiched between amorphous SiO2 layers. This kind of SiO2-Si-SiO2 quantum well provides a unique material system where electron density can be tuned in a broad range due to high potential barriers formed by the SiO2 layers. In this work we examine gate balance dependency of conductivity of double gated SiO2-Si-SiO2 quantum wells",

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Prunnila, M, Kivioja, J & Ahopelto, J 2007, Single and two sub-band transport in double gated silicon quantum wells. in Proceedings of the XLI Annual Conference of the Finnish Physics Society. University of Helsinki, University of Helsinki: Department of Physics. Report Series in Physics, no. HU-P-267, pp. 175, Physics Days - Fysiikan Päivät 2007, Tallinn, Estonia, 15/03/07.

Single and two sub-band transport in double gated silicon quantum wells. / Prunnila, Mika; Kivioja, Jani; Ahopelto, Jani.
Proceedings of the XLI Annual Conference of the Finnish Physics Society. University of Helsinki, 2007. p. 175 (University of Helsinki: Department of Physics. Report Series in Physics; No. HU-P-267).

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Scientific

TY - CHAP

T1 - Single and two sub-band transport in double gated silicon quantum wells

AU - Prunnila, Mika

AU - Kivioja, Jani

AU - Ahopelto, Jani

N1 - Conference code: 41

PY - 2007

Y1 - 2007

N2 - Development of silicon-on-insulator (SOI) technology has enabled fabrication of silicon heterostructures, where thin single crystalline Si film is sandwiched between amorphous SiO2 layers. This kind of SiO2-Si-SiO2 quantum well provides a unique material system where electron density can be tuned in a broad range due to high potential barriers formed by the SiO2 layers. In this work we examine gate balance dependency of conductivity of double gated SiO2-Si-SiO2 quantum wells

AB - Development of silicon-on-insulator (SOI) technology has enabled fabrication of silicon heterostructures, where thin single crystalline Si film is sandwiched between amorphous SiO2 layers. This kind of SiO2-Si-SiO2 quantum well provides a unique material system where electron density can be tuned in a broad range due to high potential barriers formed by the SiO2 layers. In this work we examine gate balance dependency of conductivity of double gated SiO2-Si-SiO2 quantum wells

KW - silicon-on-insulator

UR - http://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.113.268&rep=rep1&type=pdf

M3 - Conference abstract in proceedings

SN - 978-952-10-3236-3

T3 - University of Helsinki: Department of Physics. Report Series in Physics

SP - 175

BT - Proceedings of the XLI Annual Conference of the Finnish Physics Society

PB - University of Helsinki

T2 - Physics Days - Fysiikan Päivät 2007

Y2 - 15 March 2007 through 17 March 2007

ER -

Single and two sub-band transport in double gated silicon quantum wells

Abstract

Publication series

Conference

Keywords

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Cite this