Single crystal Si layers on glass formed by ion cutting

Kimmo Henttinen, Ilkka Suni, M. Cai, D. Qiao, L. S. Yu, S.S. Lau, C.P. Li, L.S. Hung, T. E. Haynes, V. M. C. Poon, T. Marek, J. W. Mayer

Research output: Contribution to journalArticleScientificpeer-review

26 Citations (Scopus)

Abstract

The process of ion cutting was used to integrate single crystalline Si layers on glass for potential active matrix flat panel display and other applications. It was found that p-Si wafers implanted at 100-150 °C with H with a dose in the order of a few times 1016 cm-2 could be readily bonded to glass substrates when both of the surfaces were properly treated and activated. The as-implanted Si wafer surface was converted from p type to n type. Upon bonding at room temperature, annealing (300 °C) and exfoliation (450 °C), the transferred Si layer on glass and the as-exfoliated surface of the implanted Si wafer remained n type. A highly defective region was observed near the top of the Si layer on glass, however the crystalline quality was nearly defect free in the deeper region of the layer. Annealing at sequentially higher temperatures led to the recovery of p type conductivity at ~600-650 °C. The type conversion and the subsequent annealing behavior observed on the samples were rationalized in terms of ion enhanced oxygen diffusion and the presence of H-related shallow donors in the Si.
Original languageEnglish
Pages (from-to)3388-3392
JournalJournal of Applied Physics
Volume92
Issue number6
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

glass
single crystals
wafers
annealing
ions
flat panel displays
recovery
dosage
conductivity
defects
room temperature
oxygen
matrices

Keywords

  • ion-cutting
  • wafer bonding
  • silicon on glass (SOG)

Cite this

Henttinen, K., Suni, I., Cai, M., Qiao, D., Yu, L. S., Lau, S. S., ... Mayer, J. W. (2002). Single crystal Si layers on glass formed by ion cutting. Journal of Applied Physics, 92(6), 3388-3392. https://doi.org/10.1063/1.1492017
Henttinen, Kimmo ; Suni, Ilkka ; Cai, M. ; Qiao, D. ; Yu, L. S. ; Lau, S.S. ; Li, C.P. ; Hung, L.S. ; Haynes, T. E. ; Poon, V. M. C. ; Marek, T. ; Mayer, J. W. / Single crystal Si layers on glass formed by ion cutting. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 6. pp. 3388-3392.
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abstract = "The process of ion cutting was used to integrate single crystalline Si layers on glass for potential active matrix flat panel display and other applications. It was found that p-Si wafers implanted at 100-150 °C with H with a dose in the order of a few times 1016 cm-2 could be readily bonded to glass substrates when both of the surfaces were properly treated and activated. The as-implanted Si wafer surface was converted from p type to n type. Upon bonding at room temperature, annealing (300 °C) and exfoliation (450 °C), the transferred Si layer on glass and the as-exfoliated surface of the implanted Si wafer remained n type. A highly defective region was observed near the top of the Si layer on glass, however the crystalline quality was nearly defect free in the deeper region of the layer. Annealing at sequentially higher temperatures led to the recovery of p type conductivity at ~600-650 °C. The type conversion and the subsequent annealing behavior observed on the samples were rationalized in terms of ion enhanced oxygen diffusion and the presence of H-related shallow donors in the Si.",
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Henttinen, K, Suni, I, Cai, M, Qiao, D, Yu, LS, Lau, SS, Li, CP, Hung, LS, Haynes, TE, Poon, VMC, Marek, T & Mayer, JW 2002, 'Single crystal Si layers on glass formed by ion cutting', Journal of Applied Physics, vol. 92, no. 6, pp. 3388-3392. https://doi.org/10.1063/1.1492017

Single crystal Si layers on glass formed by ion cutting. / Henttinen, Kimmo; Suni, Ilkka; Cai, M.; Qiao, D.; Yu, L. S.; Lau, S.S.; Li, C.P.; Hung, L.S.; Haynes, T. E.; Poon, V. M. C.; Marek, T.; Mayer, J. W.

In: Journal of Applied Physics, Vol. 92, No. 6, 2002, p. 3388-3392.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Single crystal Si layers on glass formed by ion cutting

AU - Henttinen, Kimmo

AU - Suni, Ilkka

AU - Cai, M.

AU - Qiao, D.

AU - Yu, L. S.

AU - Lau, S.S.

AU - Li, C.P.

AU - Hung, L.S.

AU - Haynes, T. E.

AU - Poon, V. M. C.

AU - Marek, T.

AU - Mayer, J. W.

N1 - Project code: T2SU00141

PY - 2002

Y1 - 2002

N2 - The process of ion cutting was used to integrate single crystalline Si layers on glass for potential active matrix flat panel display and other applications. It was found that p-Si wafers implanted at 100-150 °C with H with a dose in the order of a few times 1016 cm-2 could be readily bonded to glass substrates when both of the surfaces were properly treated and activated. The as-implanted Si wafer surface was converted from p type to n type. Upon bonding at room temperature, annealing (300 °C) and exfoliation (450 °C), the transferred Si layer on glass and the as-exfoliated surface of the implanted Si wafer remained n type. A highly defective region was observed near the top of the Si layer on glass, however the crystalline quality was nearly defect free in the deeper region of the layer. Annealing at sequentially higher temperatures led to the recovery of p type conductivity at ~600-650 °C. The type conversion and the subsequent annealing behavior observed on the samples were rationalized in terms of ion enhanced oxygen diffusion and the presence of H-related shallow donors in the Si.

AB - The process of ion cutting was used to integrate single crystalline Si layers on glass for potential active matrix flat panel display and other applications. It was found that p-Si wafers implanted at 100-150 °C with H with a dose in the order of a few times 1016 cm-2 could be readily bonded to glass substrates when both of the surfaces were properly treated and activated. The as-implanted Si wafer surface was converted from p type to n type. Upon bonding at room temperature, annealing (300 °C) and exfoliation (450 °C), the transferred Si layer on glass and the as-exfoliated surface of the implanted Si wafer remained n type. A highly defective region was observed near the top of the Si layer on glass, however the crystalline quality was nearly defect free in the deeper region of the layer. Annealing at sequentially higher temperatures led to the recovery of p type conductivity at ~600-650 °C. The type conversion and the subsequent annealing behavior observed on the samples were rationalized in terms of ion enhanced oxygen diffusion and the presence of H-related shallow donors in the Si.

KW - ion-cutting

KW - wafer bonding

KW - silicon on glass (SOG)

U2 - 10.1063/1.1492017

DO - 10.1063/1.1492017

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SP - 3388

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JF - Journal of Applied Physics

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ER -

Henttinen K, Suni I, Cai M, Qiao D, Yu LS, Lau SS et al. Single crystal Si layers on glass formed by ion cutting. Journal of Applied Physics. 2002;92(6):3388-3392. https://doi.org/10.1063/1.1492017