The process of ion cutting was used to integrate single crystalline Si layers on glass for potential active matrix flat panel display and other applications. It was found that p-Si wafers implanted at 100-150 °C with H with a dose in the order of a few times 1016 cm-2 could be readily bonded to glass substrates when both of the surfaces were properly treated and activated. The as-implanted Si wafer surface was converted from p type to n type. Upon bonding at room temperature, annealing (300 °C) and exfoliation (450 °C), the transferred Si layer on glass and the as-exfoliated surface of the implanted Si wafer remained n type. A highly defective region was observed near the top of the Si layer on glass, however the crystalline quality was nearly defect free in the deeper region of the layer. Annealing at sequentially higher temperatures led to the recovery of p type conductivity at ~600-650 °C. The type conversion and the subsequent annealing behavior observed on the samples were rationalized in terms of ion enhanced oxygen diffusion and the presence of H-related shallow donors in the Si.
|Journal||Journal of Applied Physics|
|Publication status||Published - 2002|
|MoE publication type||A1 Journal article-refereed|
- wafer bonding
- silicon on glass (SOG)